73.5 W Power Field Effect Transistors (FET) 9

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
SUD50P04-08-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	73.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	106 mJ	50 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.0081 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
SI7469ADP-T1-RE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	73.5 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	125 A	80 mJ	46 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	46 ns	-55 Cel	82 ns	MATTE TIN	.027 ohm	46 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	37 pF
NTB5605PT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	73.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	55 A	338 mJ	17 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.14 ohm	18.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTB5605PG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	73.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	55 A	338 mJ	17 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.14 ohm	18.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
FDPF15N65	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	73.5 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	637 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.44 ohm	15 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	FAST SWITCHING	TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
NTMKE4894NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	73.5 W	UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	250 A	577 mJ	33 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0024 ohm	33 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified
NTB5605P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	73.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	55 A	338 mJ	17 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.14 ohm	18.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTB5605PT4	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	73.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	55 A	338 mJ	17 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.14 ohm	18.5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0		235
RJK60S3DPD-00#J2	Renesas Electronics	N-CHANNEL	SINGLE	YES	73.5 W							1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							12 A									NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.