88 W Power Field Effect Transistors (FET) 143

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NP34N055ILE-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

NP34N055ILE-E1

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

NP34N055SLE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

NP60N055KUG-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NP60N03KUG-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NP34N055HLE-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

NP34N055ILE-E2

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

NP60N055KUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0094 ohm

60 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

NP60N055KUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP60N04KUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP34N055IHE-E2

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

NP60N04KUG-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NP34N055IHE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

NP60N03KUG-E1

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NP34N055ILE-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

NP60N04KUG-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP34N055SHE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

NP34N055IHE-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

NP60N03KUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NP34N055ILE-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

10

260

NP34N055IHE-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

NP34N055SLE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

NP34N055SLE-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

10

260

NP34N055SHE-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

NP60N04KUG-E1

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NP34N055HHE-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

NP34N055HHE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

88 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

136 A

100 mJ

34 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.019 ohm

34 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e0

NP60N04MUG-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

88 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0063 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

NP34N055SLE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

136 A

100 mJ

34 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.024 ohm

34 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

NP55N04SUG-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

55 A

NP60N03KUG-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NP60N03KUG-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP60N04KUG-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP60N04KUG-E2

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NP34N055SHE-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

10

260

NP60N03KUG-E2

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NP34N055SHE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

136 A

100 mJ

34 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.019 ohm

34 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

NP34N055IHE-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

10

260

NP60N055KUG-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN BISMUTH

.0094 ohm

60 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e6

NP34N055ILE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

IRFWZ34

Samsung

N-CHANNEL

SINGLE

YES

88 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.05 ohm

30 A

SINGLE

R-PSSO-G2

Not Qualified

IRFWZ30

Samsung

N-CHANNEL

SINGLE

YES

88 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.05 ohm

30 A

SINGLE

R-PSSO-G2

Not Qualified

IRF9Z34

Samsung

P-CHANNEL

SINGLE

NO

88 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

13 mJ

18 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

74 W

150 Cel

SILICON

188 ns

128 ns

.14 ohm

18 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

IRL530

Samsung

N-CHANNEL

SINGLE

NO

88 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

15 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

105 ns

85 ns

.2 ohm

13 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

IRFIZ30

Samsung

N-CHANNEL

SINGLE

NO

88 W

PLASTIC/EPOXY

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.05 ohm

30 A

SINGLE

R-PSIP-T3

Not Qualified

IRFZ34

Samsung

N-CHANNEL

SINGLE

NO

88 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

19 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

90 W

175 Cel

SILICON

131 ns

133 ns

.05 ohm

30 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

IRFIZ34

Samsung

N-CHANNEL

SINGLE

NO

88 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.05 ohm

30 A

SINGLE

R-PSIP-T3

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.