94 W Power Field Effect Transistors (FET) 113

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRFZ44NPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

150 mJ

49 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0175 ohm

49 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-220AB

e3

IRFZ44NSTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

150 mJ

49 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0175 ohm

49 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

e3

30

260

IRFZ44NLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

150 mJ

49 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0175 ohm

49 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-262AA

e3

30

260

AUIRFZ44N

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

530 mJ

49 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0175 ohm

49 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

AUIRFZ44NS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

150 mJ

49 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0175 ohm

49 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-263AB

e3

IRFZ44NSTRL

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

150 mJ

49 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin/Lead (Sn/Pb)

.0175 ohm

49 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-263AB

e0

30

225

IRFZ44NSTRR

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

150 mJ

49 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin/Lead (Sn/Pb)

.0175 ohm

49 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-263AB

e0

30

225

IRFZ44NS

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

94 W

ENHANCEMENT MODE

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

49 A

e0

AUIRFZ44NSTRR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

150 mJ

49 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0175 ohm

49 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-263AB

e3

IRFZ44N

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

94 W

ENHANCEMENT MODE

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

49 A

e0

IRL540NPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

310 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.053 ohm

36 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IRF540NSPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 A

185 mJ

27 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN OVER NICKEL

.044 ohm

33 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-263

e3

30

260

IRFP140NPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

300 mJ

27 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.052 ohm

33 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AC

e3

BUK7Y15-60EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

94 W

ENHANCEMENT MODE

1

53 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

53 A

IRFZ48NPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

210 A

190 mJ

53 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.014 ohm

64 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-220AB

e3

IRF3315SPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

84 A

350 mJ

21 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN OVER NICKEL

.082 ohm

21 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

IPP034N03LGXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

70 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0047 ohm

80 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IPD036N04LGATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

55 mJ

90 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0049 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

AUIRF3315S

Infineon Technologies

N-CHANNEL

SINGLE

YES

94 W

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

21 A

1

FDB86569_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

41 mJ

80 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

53 ns

-55 Cel

45 ns

MATTE TIN

.0056 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

AEC-Q101

FDB86569-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

41 mJ

80 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

53 ns

-55 Cel

45 ns

MATTE TIN

.0056 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

AEC-Q101

IRF3315L

International Rectifier

N-CHANNEL

SINGLE

NO

94 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

350 mJ

21 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

94 W

175 Cel

SILICON

TIN LEAD

.082 ohm

21 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-262AA

e0

FDPF33N25T

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

132 A

918 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.094 ohm

33 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

IPP039N04LGXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

60 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0052 ohm

80 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IRF7748L1TRPBF

Infineon Technologies

N-CHANNEL

SINGLE

94 W

1

148 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

148 A

1

FDB9409-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

70 mJ

80 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

193 ns

-55 Cel

50 ns

Matte Tin (Sn) - annealed

.0035 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

AEC-Q101

FDB9409L-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

33.7 mJ

90 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

53 ns

-55 Cel

72 ns

MATTE TIN

.0047 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

AEC-Q101

NVMFS6B14NWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

140 A

29 mJ

55 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.015 ohm

11 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVMTS003N10MCTXG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

94 W

100 V

ENHANCEMENT MODE

1

125 A

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.003 ohm

125 A

e3

NOT SPECIFIED

NOT SPECIFIED

45 pF

AEC-Q101

NVMFS6B14NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

140 A

29 mJ

55 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.015 ohm

11 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

FDMS36101L-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

101 mJ

38 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.028 ohm

38 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVMFS6B14NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

140 A

29 mJ

55 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.015 ohm

11 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

FCP11N60N

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32.4 A

201.7 mJ

10.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

65.4 ns

-55 Cel

124 ns

MATTE TIN

.299 ohm

10.8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

5 pF

FCP11N60N-F102

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32.4 A

201.7 mJ

10.8 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

65.4 ns

-55 Cel

124 ns

.299 ohm

10.8 A

SINGLE

R-PSFM-T3

TO-220AB

5 pF

NVMFS6B14NWFT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

140 A

29 mJ

55 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.015 ohm

11 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

PHB50N03TT/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

70 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.021 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

ESD PROTECTED

BUK9225-55A,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

173 A

123 mJ

43 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.027 ohm

43 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

BUK7225-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

173 A

123 mJ

43 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.025 ohm

43 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

BUK7225-55A,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

173 A

123 mJ

43 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.025 ohm

43 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

BUK9225-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

173 A

123 mJ

43 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.027 ohm

43 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

IPS06N03LB

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

210 mJ

50 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0091 ohm

50 A

SINGLE

R-PSIP-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-251AA

e3

IPS05N03LBG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

420 A

120 mJ

90 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.005 ohm

90 A

SINGLE

R-PSIP-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-251

e3

IPU05N03LBG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

420 A

120 mJ

90 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.005 ohm

90 A

SINGLE

R-PSIP-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-251

e3

IPI80N03S4L-04

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

95 mJ

80 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0037 ohm

80 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

ULTRA LOW RESISTANCE

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

IPI126N10N3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

232 A

70 mJ

58 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0126 ohm

58 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

IPI80N04S403BAKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

200 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0037 ohm

80 A

SINGLE

R-PSIP-T3

TO-262AA

71 pF

AEC-Q101

IPF06N03LA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

350 A

225 mJ

50 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0094 ohm

50 A

SINGLE

R-PSSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

e0

220

IPF05N03LA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

350 A

300 mJ

50 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0084 ohm

50 A

SINGLE

R-PSSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

e0

255

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.