99 W Power Field Effect Transistors (FET) 20

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

AUIRFR8403TRL

Infineon Technologies

N-CHANNEL

SINGLE

YES

99 W

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

1

AUIRFS8403

Infineon Technologies

N-CHANNEL

SINGLE

YES

99 W

1

123 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

123 A

1

AUIRFSL8403

Infineon Technologies

N-CHANNEL

SINGLE

NO

99 W

1

123 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

123 A

1

AUIRFU8403

Infineon Technologies

N-CHANNEL

SINGLE

NO

99 W

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

1

IRFB7446PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

99 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

492 A

111 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0033 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

BUK7675-100A,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

99 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

92 A

100 mJ

23 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.075 ohm

23 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

BUK9528-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

99 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

168 A

57.8 mJ

42 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.03 ohm

42 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK7528-55A,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

99 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

168 A

58 mJ

42 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.028 ohm

42 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK7528-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

99 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

168 A

58 mJ

42 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.028 ohm

42 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK7575-100A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

99 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

92 A

100 mJ

23 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.075 ohm

23 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK7575-100A,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

99 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

92 A

100 mJ

23 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.075 ohm

23 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK9628-55A,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

99 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

168 A

57.8 mJ

42 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.03 ohm

42 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

BUK7675-100A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

99 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

92 A

100 mJ

23 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.075 ohm

23 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

BUK9528-55A,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

99 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

168 A

57.8 mJ

42 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.03 ohm

42 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK7628-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

99 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

168 A

58 mJ

42 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.028 ohm

42 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

245

BUK9628-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

99 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

168 A

57.8 mJ

42 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.03 ohm

42 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

AUIRFS8403TRR

Infineon Technologies

N-CHANNEL

SINGLE

YES

99 W

1

123 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

123 A

1

AUIRFR8403

Infineon Technologies

N-CHANNEL

SINGLE

YES

99 W

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

1

IRFB7746PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

99 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

219 A

154 mJ

59 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0106 ohm

59 A

SINGLE

R-PSFM-T3

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

150 pF

AUIRFS8403TRL

Infineon Technologies

N-CHANNEL

SINGLE

YES

99 W

1

123 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

123 A

1

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.