National Semiconductor Power Field Effect Transistors (FET) 10

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Feedback Capacitance (Crss)
IRF431	National Semiconductor	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1		4.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		4.5 A							e0
MTM15N50	National Semiconductor	N-CHANNEL	SINGLE	NO	250 W						ENHANCEMENT MODE	1		15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		15 A							e0
NDT451AN/J23Z	National Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A	7.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.1 W	150 Cel	SILICON	50 ns	70 ns	Tin/Lead (Sn/Pb)	.035 ohm	7.2 A	DUAL	R-PDSO-G3	DRAIN	Not Qualified			e0
NDP606A	National Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	144 A	48 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	100 W	175 Cel	SILICON	320 ns	210 ns	Tin/Lead (Sn/Pb)	.025 ohm	48 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0	400 pF
NDP606AEL	National Semiconductor	N-CHANNEL	SINGLE	NO	100 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		48 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	100 W	175 Cel	SILICON			TIN LEAD	.025 ohm	48 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e0
NDP606AL	National Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	144 A	48 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	100 W	175 Cel	SILICON	530 ns	400 ns	TIN LEAD	.025 ohm	48 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e0	400 pF
NDP406BL	National Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	50 W	175 Cel	SILICON	270 ns	250 ns	TIN LEAD	.15 ohm	12 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e0	100 pF
MTD3055EL1	National Semiconductor	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		12 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON			TIN LEAD	.18 ohm	12 A	SINGLE	R-PSIP-T3	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251	e0
MTP2N35	National Semiconductor	N-CHANNEL	SINGLE	NO	50 W							1		2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		2 A							e0
MTP36N06E	National Semiconductor	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	100 W		SILICON				.04 ohm	36 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.