12 A RF Power Bipolar Junction Transistors (BJT) 22

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  2. RF Power Bipolar Junction Transistors (BJT)
Manufacturers
    • Analog Devices
    • Asi Semiconductor
    • Broadcom
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Maxim Integrated
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Texas Instruments
    • Toshiba
Polarity or Channel Type
    • NPN
    • NPN AND PNP
    • PNP
Configuration
    • COMMON BASE, 2 ELEMENTS
    • COMMON EMITTER, 2 ELEMENTS
    • COMPLEX
    • SEPARATE, 5 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount
    • NO
    • YES
Nominal Transition Frequency (fT)
    • 100 MHz
    • 1000 MHz
    • 1025 MHz
    • 108 MHz
    • 1100 MHz
    • 1150 MHz
    • 1200 MHz
    • 1250 MHz
    • 1400 MHz
    • 160 MHz
    • 1600 MHz
    • 1650 MHz
    • 175 MHz
    • 200 MHz
    • 2000 MHz
    • 245 MHz
    • 250 MHz
    • 2500 MHz
    • 2700 MHz
    • 275 MHz
    • 2900 MHz
    • 300 MHz
    • 315 MHz
    • 320 MHz
    • 3200 MHz
    • 3300 MHz
    • 3400 MHz
    • 350 MHz
    • 3500 MHz
    • 3900 MHz
    • 400 MHz
    • 4000 MHz
    • 470 MHz
    • 50 MHz
    • 500 MHz
    • 525 MHz
    • 530 MHz
    • 540 MHz
    • 550 MHz
    • 5500 MHz
    • 570 MHz
    • 600 MHz
    • 6000 MHz
    • 625 MHz
    • 650 MHz
    • 6500 MHz
    • 700 MHz
    • 7000 MHz
    • 750 MHz
    • 800 MHz
    • 8000 MHz
    • 825 MHz
    • 850 MHz
    • 860 MHz
    • 900 MHz
    • 950 MHz
Maximum Power Dissipation (Abs)
    • .105 W
    • .225 W
    • .28 W
    • 1 W
    • 1.3 W
    • 1.4 W
    • 1.5 W
    • 1.9 W
    • 10 W
    • 10.8 W
    • 100 W
    • 1000 W
    • 105 W
    • 107 W
    • 1070 W
    • 11 W
    • 11.5 W
    • 110 W
    • 1100 W
    • 1200 W
    • 125 W
    • 1250 W
    • 127 W
    • 1300 W
    • 132 W
    • 133 W
    • 134 W
    • 135 W
    • 1350 W
    • 1360 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 1460 W
    • 15 W
    • 150 W
    • 1500 W
    • 16.7 W
    • 160 W
    • 167 W
    • 1670 W
    • 17 W
    • 17.6 W
    • 175 W
    • 18 W
    • 18.8 W
    • 180 W
    • 185 W
    • 19.3 W
    • 19.4 W
    • 190 W
    • 2 W
    • 2.2 W
    • 2.3 W
    • 20 W
    • 20.6 W
    • 200 W
    • 21.4 W
    • 21.5 W
    • 21.8 W
    • 219 W
    • 220 W
    • 23 W
    • 230 W
    • 233 W
    • 245 W
    • 25 W
    • 250 W
    • 257 W
    • 27 W
    • 270 W
    • 28 W
    • 280 W
    • 29 W
    • 290 W
    • 3 W
    • 3.5 W
    • 30 W
    • 300 W
    • 31 W
    • 31.8 W
    • 310 W
    • 312 W
    • 318 W
    • 32 W
    • 320 W
    • 330 W
    • 34 W
    • 340 W
    • 35 W
    • 35.5 W
    • 350 W
    • 36 W
    • 37.2 W
    • 37.5 W
    • 375 W
    • 4 W
    • 4.2 W
    • 4.5 W
    • 40 W
    • 43 W
    • 438 W
    • 44 W
    • 45 W
    • 46 W
    • 5 W
    • 50 W
    • 500 W
    • 53 W
    • 57 W
    • 575 W
    • 58 W
    • 583 W
    • 6 W
    • 60 W
    • 600 W
    • 63 W
    • 630 W
    • 65 W
    • 67 W
    • 690 W
    • 7 W
    • 7.5 W
    • 7.6 W
    • 70 W
    • 71 W
    • 720 W
    • 73 W
    • 730 W
    • 75 W
    • 750 W
    • 76 W
    • 77 W
    • 786 W
    • 79.5 W
    • 8 W
    • 8.33 W
    • 8.7 W
    • 8.75 W
    • 80 W
    • 87 W
    • 87.5 W
    • 875 W
    • 88 W
    • 88.8 W
    • 880 W
    • 9 W
    • 9.2 W
    • 90 W
    • 910 W
    • 94 W
    • 940 W
    • 960 W
Maximum Collector Current (IC) (1)
    • 12 A
    • .001 A
    • .0011 A
    • .0113 A
    • .03 A
    • .05 A
    • .06 A
    • .08 A
    • .09 A
    • .1 A
    • .11 A
    • .15 A
    • .2 A
    • .22 A
    • .25 A
    • .3 A
    • .32 A
    • .35 A
    • .375 A
    • .4 A
    • .44 A
    • .45 A
    • .5 A
    • .54 A
    • .6 A
    • .62 A
    • .65 A
    • .7 A
    • .75 A
    • .8 A
    • .82 A
    • .85 A
    • .9 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.35 A
    • 1.4 A
    • 1.5 A
    • 1.59 A
    • 1.6 A
    • 1.65 A
    • 1.7 A
    • 1.75 A
    • 1.8 A
    • 10 A
    • 11 A
    • 12.5 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17.5 A
    • 17.8 A
    • 18.75 A
    • 19.8 A
    • 2 A
    • 2.1 A
    • 2.25 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.67 A
    • 2.7 A
    • 2.75 A
    • 2.8 A
    • 20 A
    • 21 A
    • 21.6 A
    • 22 A
    • 24 A
    • 25 A
    • 27 A
    • 28 A
    • 3 A
    • 3.25 A
    • 3.5 A
    • 3.7 A
    • 32 A
    • 35 A
    • 36 A
    • 4 A
    • 4.2 A
    • 4.4 A
    • 4.5 A
    • 4.8 A
    • 40 A
    • 43.2 A
    • 45 A
    • 5 A
    • 5.4 A
    • 5.5 A
    • 5.52 A
    • 5.7 A
    • 50 A
    • 6 A
    • 6.5 A
    • 6.7 A
    • 7 A
    • 7.4 A
    • 7.7 A
    • 7.8 A
    • 8 A
    • 8.5 A
    • 9 A
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Maximum VCEsat
    • .5 V
    • 1 V
    • 1.5 V
    • 3 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.6 dB
    • 10.8 dB
    • 11 dB
    • 11.5 dB
    • 11.8 dB
    • 12 dB
    • 12.2 dB
    • 13 dB
    • 13.5 dB
    • 15 dB
    • 16 dB
    • 17 dB
    • 18 dB
    • 4 dB
    • 4.15 dB
    • 4.3 dB
    • 4.4 dB
    • 4.5 dB
    • 4.8 dB
    • 4.88 dB
    • 4.9 dB
    • 5 dB
    • 5.1 dB
    • 5.2 dB
    • 5.4 dB
    • 5.5 dB
    • 5.6 dB
    • 5.7 dB
    • 6 dB
    • 6.2 dB
    • 6.3 dB
    • 6.4 dB
    • 6.5 dB
    • 6.6 dB
    • 6.7 dB
    • 6.8 dB
    • 6.9 dB
    • 7 dB
    • 7.2 dB
    • 7.3 dB
    • 7.4 dB
    • 7.5 dB
    • 7.7 dB
    • 7.8 dB
    • 8 dB
    • 8.1 dB
    • 8.4 dB
    • 8.5 dB
    • 8.6 dB
    • 8.7 dB
    • 8.75 dB
    • 8.8 dB
    • 9 dB
    • 9.2 dB
    • 9.3 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
No. of Elements
    • 1
    • 2
    • 5
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
No. of Terminals
    • 10
    • 14
    • 16
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • BIP RF Small Signal
    • Other Transistors
Maximum Power Dissipation Ambient
    • .2 W
    • 1.25 W
    • 1.4 W
    • 1.5 W
    • 10 W
    • 10.8 W
    • 100 W
    • 105 W
    • 11 W
    • 11.6 W
    • 116 W
    • 12 W
    • 12.5 W
    • 120 W
    • 125 W
    • 132 W
    • 133 W
    • 134 W
    • 14 W
    • 145 W
    • 15 W
    • 150 W
    • 154 W
    • 17 W
    • 175 W
    • 18 W
    • 18.6 W
    • 19.3 W
    • 2 W
    • 20 W
    • 200 W
    • 21.5 W
    • 215 W
    • 218 W
    • 220 W
    • 23 W
    • 230 W
    • 25 W
    • 250 W
    • 27 W
    • 270 W
    • 29 W
    • 290 W
    • 30 W
    • 300 W
    • 31 W
    • 32 W
    • 32.5 W
    • 320 W
    • 340 W
    • 35 W
    • 350 W
    • 38 W
    • 40 W
    • 41 W
    • 44 W
    • 45 W
    • 46 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 57 W
    • 6 W
    • 60 W
    • 64.8 W
    • 67 W
    • 68 W
    • 7.5 W
    • 70 W
    • 77 W
    • 8 W
    • 8.5 W
    • 80 W
    • 82 W
    • 87 W
    • 9 W
    • 9.6 W
    • 90 W
    • 94 W
Minimum DC Current Gain (hFE)
    • 10
    • 100
    • 120
    • 15
    • 18
    • 19
    • 20
    • 25
    • 30
    • 40
    • 45
    • 5
    • 50
    • 60
    • 75
    • 8
    • 80
    • 85
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 250 Cel
Maximum Collector-Base Capacitance
    • 10 pF
    • 100 pF
    • 120 pF
    • 125 pF
    • 130 pF
    • 15 pF
    • 150 pF
    • 16 pF
    • 160 pF
    • 18 pF
    • 19 pF
    • 2.6 pF
    • 20 pF
    • 200 pF
    • 220 pF
    • 24 pF
    • 240 pF
    • 25 pF
    • 250 pF
    • 28 pF
    • 3 pF
    • 3.5 pF
    • 3.6 pF
    • 3.7 pF
    • 30 pF
    • 300 pF
    • 320 pF
    • 330 pF
    • 36 pF
    • 360 pF
    • 4.2 pF
    • 40 pF
    • 45 pF
    • 450 pF
    • 48 pF
    • 5 pF
    • 5.2 pF
    • 50 pF
    • 500 pF
    • 55 pF
    • 6 pF
    • 6.5 pF
    • 600 pF
    • 65 pF
    • 7 pF
    • 7.5 pF
    • 8 pF
    • 8.5 pF
    • 80 pF
    • 85 pF
    • 90 pF
    • 95 pF
Transistor Element Material
    • SILICON
    • SILICON GERMANIUM
Maximum Collector-Emitter Voltage
    • 10 V
    • 100 V
    • 110 V
    • 12 V
    • 15 V
    • 16 V
    • 16.5 V
    • 17 V
    • 18 V
    • 19 V
    • 20 V
    • 22 V
    • 24 V
    • 25 V
    • 250 V
    • 27 V
    • 28 V
    • 30 V
    • 32 V
    • 33 V
    • 35 V
    • 36 V
    • 40 V
    • 400 V
    • 45 V
    • 53 V
    • 55 V
    • 6 V
    • 60 V
    • 65 V
    • 7.2 V
    • 70 V
    • 75 V
    • 8 V
Minimum Operating Temperature
    • -55 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn) - annealed
    • NICKEL
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • Tin (Sn)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CRFM-F2
    • O-CRFM-F4
    • O-CRFM-F6
    • O-CRMW-F4
    • O-CRPM-F2
    • O-CRPM-F4
    • O-CUPM-P3
    • O-CXFM-F4
    • O-CXFM-F6
    • O-MBCY-W3
    • O-MBCY-W4
    • O-MBFM-P3
    • O-MRDB-F4
    • O-MUPM-P3
    • O-MUPM-W3
    • O-PDFM-F2
    • O-PRDB-F4
    • O-PRFM-F2
    • O-PRFM-F4
    • O-PRPM-F4
    • O-PXFM-F6
    • O-XRDB-F4
    • O-XRPM-F4
    • R-CDCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFP-F16
    • R-CDFP-F2
    • R-CDFP-F6
    • R-CDMW-F2
    • R-CDSO-G8
    • R-CQCC-N3
    • R-MDFM-F2
    • R-MDFM-F4
    • R-MDFM-F6
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDIP-T14
    • R-PDSO-G10
    • R-PDSO-G14
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-XRPM-F4
    • R-XUUC-N16
    • R-XUUC-N5
    • S-CDFM-F2
    • S-CQMW-F4
    • S-PDFM-F2
    • S-PDPM-F4
    • X-PXPM-F4
    • X-XUUC-N
Moisture Sensitivity Level (MSL)
    • 1
    • 3
    • NOT APPLICABLE
Case Connection
    • BASE
    • COLLECTOR
    • EMITTER
    • ISOLATED
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • BUILT IN EMITTER BALLASTING RESISTOR
    • DIFFUSED EMITTER BALLAST RESISTOR
    • DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, HIGH VOLTAGE
    • HIGH RELIABILITY, WITH EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS
    • HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
    • LOW NOISE
    • WITH EMITTER BALLASTING RESISTORS
JEDEC-95 Code
    • TO-117
    • TO-126
    • TO-220AB
    • TO-251
    • TO-33
    • TO-39
    • TO-60
JESD-609 Code
    • e0
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 235
    • 260
    • NOT SPECIFIED
Reference Standard
    • AEC-Q101
    • MIL-38535; RH - 100K Rad(Si)
    • MIL-38535; RH - 300K Rad(Si)
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

BLW77

NXP Semiconductors

NPN

SINGLE

NO

320 MHz

245 W

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

35 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

BLW96

NXP Semiconductors

NPN

SINGLE

NO

245 MHz

340 W

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

55 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

AM2729-110

STMicroelectronics

NPN

SINGLE

YES

438 W

12 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

6.5 dB

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

30

250 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY

SD1446

STMicroelectronics

NPN

SINGLE

NO

12 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

BIP RF Small Signal

300 pF

SILICON

18 V

RADIAL

O-PRFM-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

AM1214-130

STMicroelectronics

NPN

SINGLE

YES

12 A

METAL

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

10

250 Cel

SILICON

DUAL

R-MDFM-F2

BASE

Not Qualified

SD1729(TH416)

STMicroelectronics

NPN

SINGLE

YES

12 A

PLASTIC/EPOXY

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

200 Cel

SILICON

35 V

RADIAL

O-PRFM-F4

Not Qualified

SD1729

STMicroelectronics

NPN

SINGLE

NO

175 W

12 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

18

200 Cel

SILICON

35 V

NICKEL

RADIAL

O-PRFM-F4

Not Qualified

AM2931-110

STMicroelectronics

NPN

SINGLE

YES

375 W

12 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

6.2 dB

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

30

250 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY

RN2731B110W

NXP Semiconductors

NPN

SINGLE

YES

280 W

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

25 V

DUAL

R-CDFM-F2

BASE

Not Qualified

TPV8100B

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.5 dB

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

215 W

30

200 Cel

SILICON

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLAST RESISTOR

BLS2731-150

NXP Semiconductors

NPN

SINGLE

YES

280 W

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

25

200 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

RN3034B80W

NXP Semiconductors

NPN

SINGLE

YES

280 W

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

25 V

DUAL

R-CDFM-F2

BASE

Not Qualified

MRB11175Y

NXP Semiconductors

NPN

SINGLE

YES

500 W

12 A

CERAMIC, METAL-SEALED COFIRED

7.5 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

DUAL

R-CDFM-F2

Not Qualified

BLS2731-110

NXP Semiconductors

NPN

SINGLE

YES

280 W

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

40

200 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

BLU60/12

NXP Semiconductors

NPN

SINGLE

YES

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

4.4 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

15

200 Cel

SILICON

16.5 V

UNSPECIFIED

O-CXFM-F6

ISOLATED

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

BLV950

NXP Semiconductors

NPN

COMMON EMITTER, 2 ELEMENTS

YES

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.5 dB

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

340 W

30

200 Cel

SILICON

30 V

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS

BLV2046

NXP Semiconductors

NPN

SINGLE

YES

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

2

FLANGE MOUNT

SILICON

27 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

LFE15600XTRAY

NXP Semiconductors

NPN

SINGLE

YES

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

80 W

15

200 Cel

SILICON

22 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

LFE15600X

NXP Semiconductors

NPN

SINGLE

YES

80 W

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

80 W

15

200 Cel

SILICON

22 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

LFE18500XTRAY

NXP Semiconductors

NPN

SINGLE

YES

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

120 W

15

200 Cel

SILICON

22 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

LFE18500X

NXP Semiconductors

NPN

SINGLE

YES

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

120 W

15

200 Cel

SILICON

22 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

PTB20081

Infineon Technologies

NPN

COMMON EMITTER, 2 ELEMENTS

YES

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

SILICON

25 V

MATTE TIN

DUAL

R-CDFM-F4

EMITTER

Not Qualified

HIGH RELIABILITY

e3

RF Power Bipolar Junction Transistors (BJT)

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.