NPN AND PNP RF Power Bipolar Junction Transistors (BJT) 6

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
5962F0721804V9A	Renesas Electronics	NPN AND PNP	SEPARATE, 5 ELEMENTS	YES	8000 MHz	.0113 A	UNSPECIFIED	AMPLIFIER	.5 V	NO LEAD	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	UNCASED CHIP	1.25 W	40	125 Cel	SILICON	8 V	-55 Cel	Gold (Au)	UPPER	R-XUUC-N16	Qualified	LOW NOISE	e4	30	260	MIL-38535; RH - 300K Rad(Si)
ISL73096EHVX	Renesas Electronics	NPN AND PNP	SEPARATE, 5 ELEMENTS	YES	8000 MHz	.0113 A	UNSPECIFIED	AMPLIFIER	.5 V	NO LEAD	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	UNCASED CHIP	1.25 W	40	125 Cel	SILICON	8 V	-55 Cel	GOLD	UPPER	R-XUUC-N16		LOW NOISE	e4	30	260	MIL-38535; RH - 100K Rad(Si)
ISL73096RHVF	Renesas Electronics	NPN AND PNP	SEPARATE, 5 ELEMENTS	YES	8000 MHz	.0113 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	.5 V	FLAT	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	FLATPACK	1.25 W	40	125 Cel	SILICON	8 V	-55 Cel	GOLD	DUAL	R-CDFP-F16		LOW NOISE	e4	30	260	MIL-38535; RH - 100K Rad(Si)
ISL73096EHVF	Renesas Electronics	NPN AND PNP	SEPARATE, 5 ELEMENTS	YES	8000 MHz	.0113 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	.5 V	FLAT	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	FLATPACK	1.25 W	40	125 Cel	SILICON	8 V	-55 Cel	GOLD	DUAL	R-CDFP-F16		LOW NOISE	e4	30	260	MIL-38535; RH - 100K Rad(Si)
ISL73096RHVX	Renesas Electronics	NPN AND PNP	SEPARATE, 5 ELEMENTS	YES	8000 MHz	.0113 A	UNSPECIFIED	AMPLIFIER	.5 V	NO LEAD	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	UNCASED CHIP	1.25 W	40	125 Cel	SILICON	8 V	-55 Cel	GOLD	UPPER	R-XUUC-N16		LOW NOISE	e4	30	260	MIL-38535; RH - 100K Rad(Si)
5962F0721804VXC	Renesas Electronics	NPN AND PNP	SEPARATE, 5 ELEMENTS	YES	8000 MHz	.0113 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	.5 V	FLAT	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	16	FLATPACK	1.25 W	40	125 Cel	SILICON	8 V	-55 Cel	Gold (Au)	DUAL	R-CDFP-F16	Qualified	LOW NOISE	e4	30	260	MIL-38535; RH - 300K Rad(Si)

RF Power Bipolar Junction Transistors (BJT)

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.