3000 MHz RF Small Signal Bipolar Junction Transistors (BJT) 38

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Sub-Category	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
HFA3134IHZ96	Renesas Electronics	NPN	SEPARATE, 2 ELEMENTS	YES	3000 MHz		.026 A	PLASTIC/EPOXY	AMPLIFIER	.25 V	GULL WING	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	6	SMALL OUTLINE		48	85 Cel	.5 pF	SILICON	4 V	-40 Cel	MATTE TIN	DUAL	R-PDSO-G6	2			LOW NOISE		e3	30	260
55GN01FA-TL-H	Onsemi	NPN	SINGLE	YES	3000 MHz	.25 W	.07 A						1				Other Transistors	100	150 Cel					TIN BISMUTH			1					e6	30	260
55GN01MA-TL-E	Onsemi	NPN	SINGLE	YES	3000 MHz	.4 W	.07 A						1				Other Transistors	100	150 Cel					TIN BISMUTH			1					e6	30	260
BFQ64	Infineon Technologies	NPN	SINGLE	YES	3000 MHz	1 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors	25	150 Cel		SILICON	20 V			SINGLE	R-PSSO-F3		COLLECTOR	Not Qualified		TO-243
UPA832TF-T1	Renesas Electronics	NPN		YES	3000 MHz	.2 W	.03 A										Other Transistors	75	150 Cel
2SC5431	Renesas Electronics	NPN	SINGLE	YES	3000 MHz	.1 W	.06 A						1				Other Transistors	60	125 Cel
2SC5432-EB	Renesas Electronics	NPN	SINGLE	YES	3000 MHz	.125 W	.1 A						1				Other Transistors	80	150 Cel
CA3227M	Renesas Electronics	NPN	SEPARATE, 5 ELEMENTS	YES	3000 MHz		.02 A	PLASTIC/EPOXY	SWITCHING	.5 V	GULL WING	RECTANGULAR	5	L BAND	16	SMALL OUTLINE		40	150 Cel		SILICON	8 V		Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G16			Not Qualified		MS-012AC	e0
UPA832TF	Renesas Electronics	NPN		YES	3000 MHz	.2 W	.03 A										Other Transistors	75	150 Cel
UPA831TF	Renesas Electronics	NPN		YES	3000 MHz	.2 W	.065 A										Other Transistors	70	150 Cel
2SC5005	Renesas Electronics	NPN	SINGLE	YES	3000 MHz	.1 W	.03 A						1				Other Transistors	60	125 Cel
UPA831TF-T1	Renesas Electronics	NPN		YES	3000 MHz	.2 W	.065 A										Other Transistors	70	150 Cel
2SC5431-EB	Renesas Electronics	NPN	SINGLE	YES	3000 MHz	.1 W	.06 A						1				Other Transistors	60	125 Cel
UPA835TF-T1	Renesas Electronics	NPN		YES	3000 MHz	.2 W	.03 A										Other Transistors	75	150 Cel
2SC5431-FB	Renesas Electronics	NPN	SINGLE	YES	3000 MHz	.1 W	.06 A						1				Other Transistors	80	125 Cel
UPA835TF	Renesas Electronics	NPN		YES	3000 MHz	.2 W	.03 A										Other Transistors	75	150 Cel
UPA862TS	Renesas Electronics	NPN		YES	3000 MHz	.13 W	.03 A										Other Transistors	75	150 Cel
2SC5432-FB	Renesas Electronics	NPN	SINGLE	YES	3000 MHz	.125 W	.1 A						1				Other Transistors	100	150 Cel
2SC2148	Renesas Electronics	NPN	SINGLE	YES	3000 MHz	.25 W	.05 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	SQUARE	1	C BAND	4	MICROWAVE	Other Transistors		175 Cel		SILICON	14 V		Tin/Lead (Sn/Pb)	UNSPECIFIED	S-CXMW-F4						e0
UPA863TS	Renesas Electronics	NPN		YES	3000 MHz	.13 W	.03 A										Other Transistors	70	150 Cel
UPA810TC	Renesas Electronics	NPN		YES	3000 MHz	.23 W	.1 A										Other Transistors	70	150 Cel
UPA834TF-T1	Renesas Electronics	NPN		YES	3000 MHz	.2 W	.065 A										Other Transistors	70	150 Cel
UPA873TS-T3	Renesas Electronics	NPN		YES	3000 MHz	.13 W	.1 A										Other Transistors	100	150 Cel
UPA862TS-T3	Renesas Electronics	NPN		YES	3000 MHz	.13 W	.03 A										Other Transistors	75	150 Cel
UPA869TD	Renesas Electronics	NPN		YES	3000 MHz	.21 W	.1 A										Other Transistors	100	150 Cel														NOT SPECIFIED	NOT SPECIFIED
CA3227M96	Renesas Electronics	NPN	SEPARATE, 5 ELEMENTS	YES	3000 MHz		.02 A	PLASTIC/EPOXY	SWITCHING	.5 V	GULL WING	RECTANGULAR	5	L BAND	16	SMALL OUTLINE		40	150 Cel		SILICON	8 V			DUAL	R-PDSO-G16			Not Qualified		MS-012AC
2SC5432	Renesas Electronics	NPN	SINGLE	YES	3000 MHz	.125 W	.1 A						1				Other Transistors	80	150 Cel
UPA895TS	Renesas Electronics	NPN		YES	3000 MHz	.13 W	.1 A										Other Transistors	100	150 Cel
2SC2149	Renesas Electronics	NPN	SINGLE	YES	3000 MHz	.29 W	.05 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	SQUARE	1	C BAND	4	MICROWAVE	Other Transistors		175 Cel		SILICON	14 V		Tin/Lead (Sn/Pb)	UNSPECIFIED	S-CXMW-F4						e0
UPA834TF	Renesas Electronics	NPN		YES	3000 MHz	.2 W	.065 A										Other Transistors	70	150 Cel
UPA873TS	Renesas Electronics	NPN		YES	3000 MHz	.13 W	.1 A										Other Transistors	100	150 Cel
UPA863TS-T3	Renesas Electronics	NPN		YES	3000 MHz	.13 W	.03 A										Other Transistors	70	150 Cel
UPA869TD-T3	Renesas Electronics	NPN		YES	3000 MHz	.21 W	.1 A										Other Transistors	100	150 Cel														NOT SPECIFIED	NOT SPECIFIED
NE851M33-A	Renesas Electronics	NPN	SINGLE	YES	3000 MHz	.13 W	.1 A						1				Other Transistors	100	150 Cel
NE851M33-T3-A	Renesas Electronics	NPN	SINGLE	YES	3000 MHz	.13 W	.1 A						1				Other Transistors	100	150 Cel
HFA3134IH96	Renesas Electronics	NPN	SEPARATE, 2 ELEMENTS	YES	3000 MHz		.026 A	PLASTIC/EPOXY	AMPLIFIER	.25 V	GULL WING	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	6	SMALL OUTLINE		48	85 Cel	.5 pF	SILICON	4 V	-40 Cel		DUAL	R-PDSO-G6				LOW NOISE
2SC4226-A	Renesas Electronics	NPN	SINGLE	YES	3000 MHz	.15 W	.1 A						1				Other Transistors	40	150 Cel
2SC4226-T1-A	Renesas Electronics	NPN	SINGLE	YES	3000 MHz	.15 W	.1 A						1				Other Transistors	40	150 Cel

RF Small Signal Bipolar Junction Transistors (BJT)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few milliwatts to a few watts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.