940 MHz RF Small Signal Bipolar Junction Transistors (BJT) 42

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

2SC535CRF

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

1.2 pF

SILICON

20 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SC5852QBTL-E

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

150 Cel

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

2SC3391RR

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

1.2 pF

SILICON

20 V

SINGLE

R-PSIP-W3

Not Qualified

2SC535CTZ

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

150 Cel

1.2 pF

SILICON

20 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SC535BRF

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

1.2 pF

SILICON

20 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SC2620QB01

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

1.2 pF

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

2SC535BTZ

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

150 Cel

1.2 pF

SILICON

20 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SC3391CRF

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

IN-LINE

1.2 pF

SILICON

20 V

SINGLE

R-PSIP-T3

Not Qualified

2SC2620QBTL-E

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

150 Cel

1.2 pF

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

2SC535BRR

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

1.2 pF

SILICON

20 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SC535CRR

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

1.2 pF

SILICON

20 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SC2620QBUL

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

1.2 pF

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

2SC2620QCTR-E

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

1.2 pF

SILICON

20 V

TIN BISMUTH

DUAL

R-PDSO-G3

1

Not Qualified

e6

2SC535RR

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

1.2 pF

SILICON

20 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SC3391

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

IN-LINE

1.2 pF

SILICON

20 V

SINGLE

R-PSIP-T3

Not Qualified

2SC2620QCUL

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

1.2 pF

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

2SC2620QCTL

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

1.2 pF

SILICON

20 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

2SC3391CTZ

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

IN-LINE

1.2 pF

SILICON

20 V

SINGLE

R-PSIP-T3

Not Qualified

2SC5852QCTL-E

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

150 Cel

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

2SC535-B

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.1 W

.02 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

60

125 Cel

1.2 pF

SILICON

20 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SC535

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

1.2 pF

SILICON

20 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SC3391B

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.2 W

.02 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

IN-LINE

Other Transistors

60

150 Cel

1.2 pF

SILICON

20 V

SINGLE

R-PSIP-T3

Not Qualified

2SC2620QCUR

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

1.2 pF

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

2SC2620

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

150 Cel

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

2SC3391C

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.2 W

.02 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

IN-LINE

Other Transistors

100

150 Cel

1.2 pF

SILICON

20 V

SINGLE

R-PSIP-T3

Not Qualified

2SC3391BRF

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

IN-LINE

1.2 pF

SILICON

20 V

SINGLE

R-PSIP-T3

Not Qualified

2SC5852

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SC2620QC

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

1.2 pF

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

2SC2620QBUR

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

1.2 pF

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

2SC535RF

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

1.2 pF

SILICON

20 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SC3391CRR

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

IN-LINE

1.2 pF

SILICON

20 V

SINGLE

R-PSIP-T3

Not Qualified

2SC2620QCTR

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

1.2 pF

SILICON

20 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

2SC2620QBTR-E

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

1.2 pF

SILICON

20 V

TIN BISMUTH

DUAL

R-PDSO-G3

1

Not Qualified

e6

2SC2620QBTR

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

1.2 pF

SILICON

20 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

2SC3391BRR

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

IN-LINE

1.2 pF

SILICON

20 V

SINGLE

R-PSIP-T3

Not Qualified

2SC2620QCTL-E

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

150 Cel

1.2 pF

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

2SC3391TZ

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

1.2 pF

SILICON

20 V

SINGLE

R-PSIP-W3

Not Qualified

2SC3391RF

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

1.2 pF

SILICON

20 V

SINGLE

R-PSIP-W3

Not Qualified

2SC2620QB

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

1.2 pF

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

2SC2620-C

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.1 W

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

200

125 Cel

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

2SC2620QC01

Renesas Electronics

NPN

SINGLE

YES

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

1.2 pF

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

2SC535TZ

Renesas Electronics

NPN

SINGLE

NO

940 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

1.2 pF

SILICON

20 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

RF Small Signal Bipolar Junction Transistors (BJT)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few milliwatts to a few watts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.