NO RF Small Signal Bipolar Junction Transistors (BJT) 780

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Manufacturers
    • Broadcom
    • Central Semiconductor
    • Defense Logistics Agency
    • Diodes Incorporated
    • Fairchild Semiconductor
    • Infineon Technologies
    • Intersil
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • National Semiconductor
    • Nte Electronics
    • Onsemi
    • ROHM
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Skyworks Solutions
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Vishay Telefunken
Polarity or Channel Type
    • N-CHANNEL
    • NPN
    • NPN AND PNP
    • PNP
Configuration
    • COMMON EMITTER, 2 ELEMENTS
    • COMPLEX
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 4 ELEMENTS
    • SEPARATE, 5 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SERIES, 2 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT IN ACTIVE BIASING ELEMENT
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount (1)
    • NO
    • YES
Nominal Transition Frequency (fT)
    • .75 MHz
    • 1.6 MHz
    • 100 MHz
    • 1000 MHz
    • 10000 MHz
    • 10500 MHz
    • 10600 MHz
    • 10800 MHz
    • 11.2 MHz
    • 11.5 MHz
    • 110 MHz
    • 1100 MHz
    • 11000 MHz
    • 110000 MHz
    • 1150 MHz
    • 11500 MHz
    • 12.5 MHz
    • 1200 MHz
    • 12000 MHz
    • 12500 MHz
    • 12600 MHz
    • 1300 MHz
    • 13000 MHz
    • 1350 MHz
    • 13500 MHz
    • 1400 MHz
    • 14000 MHz
    • 14500 MHz
    • 150 MHz
    • 1500 MHz
    • 15000 MHz
    • 15500 MHz
    • 16 MHz
    • 1600 MHz
    • 16000 MHz
    • 16500 MHz
    • 1700 MHz
    • 17000 MHz
    • 17500 MHz
    • 1800 MHz
    • 18000 MHz
    • 1900 MHz
    • 19000 MHz
    • 2 MHz
    • 200 MHz
    • 2000 MHz
    • 20000 MHz
    • 2100 MHz
    • 21000 MHz
    • 2200 MHz
    • 22000 MHz
    • 230 MHz
    • 2300 MHz
    • 23000 MHz
    • 2400 MHz
    • 24000 MHz
    • 25 MHz
    • 250 MHz
    • 2500 MHz
    • 25000 MHz
    • 260 MHz
    • 26000 MHz
    • 26500 MHz
    • 27500 MHz
    • 2800 MHz
    • 28000 MHz
    • 28500 MHz
    • 2900 MHz
    • 29000 MHz
    • 3.5 MHz
    • 300 MHz
    • 3000 MHz
    • 30000 MHz
    • 320 MHz
    • 3200 MHz
    • 32500 MHz
    • 34000 MHz
    • 350 MHz
    • 3500 MHz
    • 35000 MHz
    • 3600 MHz
    • 36000 MHz
    • 361 MHz
    • 3700 MHz
    • 37000 MHz
    • 3800 MHz
    • 38000 MHz
    • 390 MHz
    • 39000 MHz
    • 40 MHz
    • 400 MHz
    • 4000 MHz
    • 40000 MHz
    • 41000 MHz
    • 4200 MHz
    • 42000 MHz
    • 4300 MHz
    • 43000 MHz
    • 440 MHz
    • 4400 MHz
    • 44000 MHz
    • 450 MHz
    • 4500 MHz
    • 45000 MHz
    • 46000 MHz
    • 470 MHz
    • 47000 MHz
    • 490 MHz
    • 500 MHz
    • 5000 MHz
    • 510 MHz
    • 53000 MHz
    • 550 MHz
    • 5500 MHz
    • 55000 MHz
    • 560 MHz
    • 5800 MHz
    • 6.5 MHz
    • 600 MHz
    • 6000 MHz
    • 60000 MHz
    • 620 MHz
    • 650 MHz
    • 6500 MHz
    • 65000 MHz
    • 6700 MHz
    • 690 MHz
    • 700 MHz
    • 7000 MHz
    • 70000 MHz
    • 7200 MHz
    • 7300 MHz
    • 750 MHz
    • 7500 MHz
    • 75000 MHz
    • 7700 MHz
    • 7800 MHz
    • 8 MHz
    • 80 MHz
    • 800 MHz
    • 8000 MHz
    • 80000 MHz
    • 850 MHz
    • 8500 MHz
    • 85000 MHz
    • 9 MHz
    • 90 MHz
    • 900 MHz
    • 9000 MHz
    • 90000 MHz
    • 940 MHz
    • 950 MHz
    • 9500 MHz
Maximum Power Dissipation (Abs)
    • .016 W
    • .03 W
    • .032 W
    • .035 W
    • .039 W
    • .04 W
    • .045 W
    • .05 W
    • .054 W
    • .055 W
    • .06 W
    • .08 W
    • .085 W
    • .09 W
    • .1 W
    • .105 W
    • .11 W
    • .115 W
    • .12 W
    • .125 W
    • .13 W
    • .135 W
    • .136 W
    • .14 W
    • .15 W
    • .16 W
    • .162 W
    • .175 W
    • .18 W
    • .185 W
    • .188 W
    • .19 W
    • .197 W
    • .2 W
    • .202 W
    • .205 W
    • .21 W
    • .22 W
    • .225 W
    • .23 W
    • .234 W
    • .24 W
    • .25 W
    • .273 W
    • .28 W
    • .29 W
    • .295 W
    • .3 W
    • .33 W
    • .333 W
    • .35 W
    • .36 W
    • .365 W
    • .37 W
    • .38 W
    • .4 W
    • .41 W
    • .45 W
    • .48 W
    • .5 W
    • .58 W
    • .6 W
    • .625 W
    • .64 W
    • .65 W
    • .67 W
    • .69 W
    • .7 W
    • .735 W
    • .75 W
    • .8 W
    • .886 W
    • .9 W
    • 1 W
    • 1.15 W
    • 1.2 W
    • 1.25 W
    • 1.4 W
    • 1.5 W
    • 1.7 W
    • 1.8 W
    • 1.9 W
    • 12 W
    • 150 W
    • 2 W
    • 2.1 W
    • 2.7 W
    • 3 W
    • 3.5 W
    • 3.75 W
    • 4 W
    • 4.5 W
    • 4.9 W
    • 5 W
    • 6 W
    • 6.3 W
    • 7 W
    • 70 W
    • 8 W
    • 8.3 W
    • 8.75 W
    • 8.8 W
    • 80 W
    • 85 W
Maximum Collector Current (IC)
    • .00009 A
    • .0001 A
    • .0002 A
    • .0004 A
    • .0005 A
    • .002 A
    • .0036 A
    • .004 A
    • .005 A
    • .006 A
    • .0065 A
    • .007 A
    • .008 A
    • .01 A
    • .0113 A
    • .012 A
    • .015 A
    • .016 A
    • .018 A
    • .02 A
    • .024 A
    • .025 A
    • .026 A
    • .03 A
    • .032 A
    • .035 A
    • .036 A
    • .037 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .065 A
    • .07 A
    • .075 A
    • .08 A
    • .09 A
    • .1 A
    • .12 A
    • .15 A
    • .2 A
    • .21 A
    • .23 A
    • .25 A
    • .3 A
    • .32 A
    • .35 A
    • .4 A
    • .425 A
    • .5 A
    • .6 A
    • .64 A
    • .65 A
    • .7 A
    • .75 A
    • .8 A
    • 1 A
    • 1.1 A
    • 1.25 A
    • 10 A
    • 120 A
    • 3 A
    • 6 A
    • 7 A
Package Body Material
    • CERAMIC, GLASS-SEALED
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Maximum VCEsat
    • .2 V
    • .25 V
    • .3 V
    • .4 V
    • .45 V
    • .5 V
    • .6 V
    • 1 V
    • 1.6 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.9 dB
    • 11 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 13 dB
    • 13.5 dB
    • 14 dB
    • 14.5 dB
    • 15 dB
    • 15.5 dB
    • 16 dB
    • 16.5 dB
    • 17 dB
    • 17.5 dB
    • 18 dB
    • 19.5 dB
    • 20 dB
    • 21 dB
    • 22 dB
    • 28 dB
    • 29 dB
    • 30 dB
    • 6 dB
    • 7 dB
    • 7.5 dB
    • 8 dB
    • 8.5 dB
    • 9 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 5
    • 6
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • MILLIMETER WAVE BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
No. of Terminals
    • 14
    • 16
    • 2
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • BIP General Purpose Small Signal
    • BIP RF Small Signal
    • BIP RF Small Signals
    • Other Transistors
Maximum Power Dissipation Ambient
    • .016 W
    • .03 W
    • .032 W
    • .05 W
    • .054 W
    • .1 W
    • .12 W
    • .125 W
    • .135 W
    • .14 W
    • .15 W
    • .188 W
    • .2 W
    • .225 W
    • .227 W
    • .25 W
    • .28 W
    • .3 W
    • .33 W
    • .35 W
    • .375 W
    • .4 W
    • .45 W
    • .48 W
    • .5 W
    • .65 W
    • .7 W
    • .75 W
    • .8 W
    • 1 W
    • 1.15 W
    • 1.2 W
    • 1.4 W
    • 1.5 W
    • 1.9 W
    • 12 W
    • 2 W
    • 2.1 W
    • 2.7 W
    • 2.9 W
    • 3 W
    • 3.5 W
    • 3.75 W
    • 4 W
    • 4.5 W
    • 5 W
    • 6 W
    • 7.2 W
Minimum DC Current Gain (hFE)
    • 10
    • 100
    • 110
    • 120
    • 125
    • 130
    • 132
    • 135
    • 140
    • 15
    • 150
    • 155
    • 160
    • 170
    • 18
    • 20
    • 200
    • 205
    • 220
    • 235
    • 25
    • 250
    • 27
    • 270
    • 28
    • 29
    • 30
    • 300
    • 35
    • 39
    • 40
    • 400
    • 45
    • 48
    • 5
    • 50
    • 54
    • 55
    • 56
    • 60
    • 65
    • 67
    • 70
    • 72
    • 75
    • 80
    • 82
    • 85
    • 90
    • 95
    • 97
Maximum Operating Temperature
    • 125 Cel
    • 128 Cel
    • 135 Cel
    • 150 Cel
    • 165 Cel
    • 175 Cel
    • 180 Cel
    • 200 Cel
    • 85 Cel
Maximum Collector-Base Capacitance
    • .01 pF
    • .08 pF
    • .084 pF
    • .1 pF
    • .12 pF
    • .13 pF
    • .14 pF
    • .15 pF
    • .16 pF
    • .17 pF
    • .2 pF
    • .22 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .27 pF
    • .28 pF
    • .29 pF
    • .3 pF
    • .34 pF
    • .35 pF
    • .36 pF
    • .4 pF
    • .41 pF
    • .42 pF
    • .44 pF
    • .45 pF
    • .46 pF
    • .48 pF
    • .5 pF
    • .52 pF
    • .53 pF
    • .54 pF
    • .55 pF
    • .57 pF
    • .6 pF
    • .65 pF
    • .67 pF
    • .7 pF
    • .72 pF
    • .74 pF
    • .75 pF
    • .8 pF
    • .85 pF
    • .9 pF
    • .95 pF
    • 1 pF
    • 1.05 pF
    • 1.1 pF
    • 1.15 pF
    • 1.2 pF
    • 1.25 pF
    • 1.3 pF
    • 1.35 pF
    • 1.4 pF
    • 1.45 pF
    • 1.5 pF
    • 1.55 pF
    • 1.6 pF
    • 1.7 pF
    • 1.8 pF
    • 1.85 pF
    • 1.9 pF
    • 10 pF
    • 15 pF
    • 2 pF
    • 2.2 pF
    • 2.3 pF
    • 2.5 pF
    • 2.75 pF
    • 2.9 pF
    • 20 pF
    • 3 pF
    • 3.2 pF
    • 3.5 pF
    • 300 pF
    • 4 pF
    • 4.2 pF
    • 4.3 pF
    • 4.5 pF
    • 4.7 pF
    • 5 pF
    • 5.23 pF
    • 6 pF
    • 6.5 pF
    • 7 pF
    • 8 pF
    • 9 pF
Transistor Element Material
    • GALLIUM ARSENIDE
    • SILICON
    • SILICON GERMANIUM
    • SILICON GERMANIUM CARBON
Maximum Collector-Emitter Voltage
    • 10 V
    • 100 V
    • 11 V
    • 12 V
    • 120 V
    • 13 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 18 V
    • 19 V
    • 2.25 V
    • 2.3 V
    • 2.5 V
    • 2.8 V
    • 20 V
    • 23 V
    • 25 V
    • 27 V
    • 28 V
    • 3 V
    • 3.3 V
    • 3.5 V
    • 30 V
    • 33 V
    • 35 V
    • 36 V
    • 4 V
    • 4.1 V
    • 4.2 V
    • 4.3 V
    • 4.5 V
    • 40 V
    • 45 V
    • 48 V
    • 5 V
    • 5.3 V
    • 5.5 V
    • 50 V
    • 6 V
    • 6.1 V
    • 6.5 V
    • 60 V
    • 65 V
    • 7 V
    • 7.2 V
    • 8 V
    • 80 V
    • 9 V
    • 9.2 V
    • 9.5 V
    • 90 V
    • 95 V
Maximum Turn On Time (ton)
    • 12 ns
    • 15 ns
    • 20 ns
    • 35 ns
    • 38 ns
    • 45 ns
    • 60 ns
    • 70 ns
Minimum Operating Temperature
    • -40 Cel
    • -55 Cel
    • -65 Cel
    • 150 Cel
Maximum Turn Off Time (toff)
    • 100 ns
    • 18 ns
    • 190 ns
    • 20 ns
    • 285 ns
    • 30 ns
    • 300 ns
    • 35 ns
    • 40 ns
    • 75 ns
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • MATTE TIN/TIN BISMUTH
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL PALLADIUM GOLD
    • PALLADIUM GOLD
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN OVER COPPER
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Bismuth (Sn98Bi2)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • TRIPLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CRFM-F2
    • O-CRMW-F4
    • O-CRPM-F3
    • O-CRPM-F4
    • O-CXFM-F2
    • O-CXMW-F4
    • O-MBCY-W3
    • O-MBCY-W4
    • O-MBCY-W6
    • O-MRDB-F4
    • O-MUPM-P3
    • O-PBCY-P3
    • O-PBCY-T3
    • O-PBCY-W3
    • O-PRDB-F3
    • O-PRDB-F4
    • O-PRDB-G4
    • O-PRFM-F2
    • O-PRPM-F4
    • O-XRDB-F4
    • O-XRPM-F4
    • R-CDFM-F2
    • R-CDFP-F16
    • R-CDIP-T16
    • R-CDSO-G8
    • R-CDSO-N3
    • R-GDIP-T16
    • R-MDFM-F2
    • R-PBCC-N3
    • R-PBCY-T3
    • R-PDFP-F3
    • R-PDFP-F4
    • R-PDIP-T14
    • R-PDIP-T16
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-F8
    • R-PDSO-G14
    • R-PDSO-G16
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSIP-W3
    • R-PSSO-F3
    • R-PSSO-G3
    • R-PSSO-G4
    • R-XBCC-N3
    • R-XBCC-N6
    • R-XBCC-N7
    • R-XDFM-F6
    • R-XUUC-N16
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • S-CDMW-F6
    • S-CQMW-F4
    • S-CTMW-F5
    • S-CXMW-F4
    • S-PBCC-N7
    • S-PQCC-N16
    • S-PQSO-N8
    • S-XBCC-N7
    • S-XUUC-N2
    • S-XUUC-N3
    • X-CQMW-F4
    • X-CXMW-F4
    • X-XUUC-N
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • NOT APPLICABLE
Case Connection
    • BASE
    • COLLECTOR
    • EMITTER
    • ISOLATED
    • SHIELD
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • BUILT IN EMITTER BALLASTING RESISTOR
    • BUILT-IN EMITTER BALLASTING RESISTORS
    • ESD PROTECTED, LOW NOISE
    • EUROPEAN PART NUMBER
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, DIFFUSED BALLAST RESISTORS
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, LOW NOISE
    • HIGH RELIABILITY, LOW NOISE, TR, 7 INCH : 3000
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY; WITH EMITTER BALLASTING RESISTOR
    • HIGH SPEED SATURATED SWITCHING
    • HIGH VOLTAGE, HIGH RELIABILITY
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
    • LOW NOISE, TR7:3
    • TR, 7 INCH: 3000
    • TUNER
    • WITH EMITTER BALLASTING RESISTORS
    • WITH EMITTER BALLASTING RESISTORS, HIGH RELIABILITY
JEDEC-95 Code
    • MO-252
    • MS-001AA
    • MS-001BB
    • MS-012AA
    • MS-012AB
    • MS-012AC
    • TO-117
    • TO-12
    • TO-126
    • TO-18
    • TO-202
    • TO-205AD
    • TO-236
    • TO-236AA
    • TO-236AB
    • TO-236AF
    • TO-243
    • TO-243AA
    • TO-253AA
    • TO-33
    • TO-39
    • TO-46
    • TO-60
    • TO-72
    • TO-78
    • TO-92
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e3/e6
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 235
    • 240
    • 260
    • NOT SPECIFIED
Reference Standard
    • AEC-Q101
    • AEC-Q101; IEC-60134
    • CECC
    • ESA-SCC-5611/006
    • ESA-SCC-5611/008
    • EUROPEAN SPACE AGENCY
    • IEC-134
    • IEC-60134
    • MIL-19500
    • MIL-19500/301H
    • MIL-19500/343F
    • MIL-19500/398
    • MIL-19500/426
    • MIL-38535
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

BF959

Onsemi

NPN

SINGLE

NO

700 MHz

.625 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

20 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

MPSH10

Onsemi

NPN

SINGLE

NO

650 MHz

.35 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

60

150 Cel

.7 pF

SILICON

25 V

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

30

235

BF959RL1

Onsemi

NPN

SINGLE

NO

700 MHz

1.5 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

35

150 Cel

SILICON

20 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

235

MRF426A

Motorola

NPN

NO

70 W

3 A

1

BIP RF Small Signal

10

SILICON

2N5109

Texas Instruments

NPN

SINGLE

NO

1200 MHz

.4 A

METAL

AMPLIFIER

WIRE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

3.5 pF

SILICON

20 V

BOTTOM

O-MBCY-W3

Not Qualified

LOW NOISE

TO-39

JAN2N4957

Defense Logistics Agency

PNP

SINGLE

NO

.03 A

METAL

AMPLIFIER

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

CYLINDRICAL

.8 pF

SILICON

30 V

BOTTOM

O-MBCY-W4

ISOLATED

Qualified

TO-72

MIL-19500/426

BF959G

Onsemi

NPN

SINGLE

NO

700 MHz

1.5 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

35

150 Cel

SILICON

20 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

BF959RL1G

Onsemi

NPN

SINGLE

NO

700 MHz

1.5 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

35

150 Cel

SILICON

20 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e1

260

BF959ZL1

Onsemi

NPN

SINGLE

NO

700 MHz

1.5 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

35

150 Cel

SILICON

20 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

235

BF959ZL1G

Onsemi

NPN

SINGLE

NO

700 MHz

1.5 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

35

150 Cel

SILICON

20 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e1

260

CA3083Z

Renesas Electronics

NPN

SEPARATE, 5 ELEMENTS

NO

450 MHz

.5 W

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

5

VERY HIGH FREQUENCY BAND

16

IN-LINE

Other Transistors

40

150 Cel

SILICON

15 V

MATTE TIN

DUAL

R-PDIP-T16

Not Qualified

e3

MPSH10RLRAG

Onsemi

NPN

SINGLE

NO

650 MHz

.35 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

60

150 Cel

.7 pF

SILICON

25 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

SS9018FBU

Onsemi

NPN

SINGLE

NO

1100 MHz

.4 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

54

150 Cel

1.7 pF

SILICON

15 V

Tin (Sn)

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

SS9018GBU

Onsemi

NPN

SINGLE

NO

1100 MHz

.4 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

72

150 Cel

1.7 pF

SILICON

15 V

TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

SS9018HBU

Onsemi

NPN

SINGLE

NO

1100 MHz

.4 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

97

150 Cel

1.7 pF

SILICON

15 V

Tin (Sn)

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

JANTX2N918

Microchip Technology

NPN

SINGLE

NO

.05 A

METAL

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

CYLINDRICAL

200 Cel

3 pF

SILICON

15 V

-65 Cel

TIN LEAD

BOTTOM

O-MBCY-W4

Qualified

TO-72

e0

MIL-19500/301H

MPSH10G

Onsemi

NPN

SINGLE

NO

650 MHz

.35 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

60

150 Cel

.7 pF

SILICON

25 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

MPSH10RLRA

Onsemi

NPN

SINGLE

NO

650 MHz

.35 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

60

150 Cel

.7 pF

SILICON

25 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

MPSH10RLRPG

Onsemi

NPN

SINGLE

NO

650 MHz

.35 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

60

150 Cel

.7 pF

SILICON

25 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

NTE311

Nte Electronics

NPN

SINGLE

NO

800 MHz

5 W

.4 A

METAL

AMPLIFIER

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

5 W

25

3 pF

SILICON

30 V

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-39

NOT SPECIFIED

NOT SPECIFIED

BFY90PBFREE

Central Semiconductor

NPN

SINGLE

NO

1400 MHz

.3 W

.025 A

METAL

AMPLIFIER

21 dB

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

CYLINDRICAL

.2 W

20

200 Cel

1.5 pF

SILICON

15 V

-65 Cel

MATTE TIN OVER NICKEL

BOTTOM

O-MBCY-W4

TO-72

e3

CA3086

Renesas Electronics

NPN

COMPLEX

NO

550 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

6

VERY HIGH FREQUENCY BAND

14

IN-LINE

125 Cel

SILICON

15 V

-55 Cel

TIN LEAD

DUAL

R-PDIP-T14

1

Not Qualified

MS-001AA

e0

40

260

JAN2N2857

Defense Logistics Agency

NPN

SINGLE

NO

.04 A

METAL

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

CYLINDRICAL

1 pF

SILICON

15 V

BOTTOM

O-MBCY-W4

Qualified

TO-72

MIL-19500/343F

LM3146N

National Semiconductor

NPN

COMPLEX

NO

500 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

5

VERY HIGH FREQUENCY BAND

14

IN-LINE

30

85 Cel

SILICON

30 V

TIN LEAD

DUAL

R-PDIP-T14

Not Qualified

e0

2SC2995

Toshiba

NPN

SINGLE

NO

350 MHz

.2 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

IN-LINE

Other Transistors

40

125 Cel

1.3 pF

SILICON

30 V

TIN LEAD

SINGLE

R-PSIP-T3

Not Qualified

e0

CA3146E

Intersil

NPN

COMPLEX

NO

500 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

5

VERY HIGH FREQUENCY BAND

14

IN-LINE

SILICON

30 V

TIN LEAD

DUAL

R-PDIP-T14

Not Qualified

LOW NOISE

MS-001AA

e0

KSP10

Onsemi

NPN

SINGLE

NO

650 MHz

1 W

PLASTIC/EPOXY

.5 V

THROUGH-HOLE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

.35 W

60

150 Cel

.7 pF

SILICON

25 V

BOTTOM

O-PBCY-T3

TO-92

MPS3640

NXP Semiconductors

PNP

SINGLE

NO

500 MHz

.08 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

3.5 pF

SILICON

12 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

PN5179/D26Z

National Semiconductor

NPN

SINGLE

NO

900 MHz

PLASTIC/EPOXY

AMPLIFIER

.4 V

15 dB

THROUGH-HOLE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

25

1 pF

SILICON

12 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

PN5179D26Z

Fairchild Semiconductor

NPN

SINGLE

NO

900 MHz

.6 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

150 Cel

1 pF

SILICON

12 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e3

2N5771

National Semiconductor

PNP

SINGLE

NO

700 MHz

.625 W

.2 A

PLASTIC/EPOXY

SWITCHING

.6 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

3 pF

SILICON

15 V

15 ns

20 ns

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-T3

Not Qualified

HIGH SPEED SATURATED SWITCHING

TO-92

e0

BFQ52

NXP Semiconductors

PNP

SINGLE

NO

5000 MHz

.025 A

METAL

AMPLIFIER

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

SILICON

15 V

BOTTOM

O-MBCY-W3

SHIELD

Not Qualified

LOW NOISE

TO-72

NTE123A

Nte Electronics

NPN

SINGLE

NO

300 MHz

.4 W

.8 A

METAL

SWITCHING

WIRE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

100

SILICON

40 V

BOTTOM

O-MBCY-W3

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

2N4260

Texas Instruments

PNP

SINGLE

NO

1.6 MHz

.2 W

.03 A

METAL

AMPLIFIER

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

CYLINDRICAL

Other Transistors

30

200 Cel

2.5 pF

SILICON

15 V

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

A5T4261

Texas Instruments

PNP

SINGLE

NO

2 MHz

.5 W

.03 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

25

175 Cel

2.5 pF

SILICON

15 V

BOTTOM

O-PBCY-W3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIS84

Texas Instruments

NPN

SINGLE

NO

650 MHz

.25 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

30

150 Cel

SILICON

30 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

TIS63A

Texas Instruments

NPN

SINGLE

NO

500 MHz

.5 W

.03 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

30

150 Cel

1.3 pF

SILICON

12 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

TIS62A

Texas Instruments

NPN

SINGLE

NO

500 MHz

.5 W

.03 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

20

150 Cel

1.3 pF

SILICON

12 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

2N3114

Texas Instruments

NPN

SINGLE

NO

40 MHz

.8 W

.2 A

METAL

AMPLIFIER

WIRE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

15

200 Cel

9 pF

SILICON

150 V

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-39

NOT SPECIFIED

NOT SPECIFIED

TIS126

Texas Instruments

NPN

SINGLE

NO

600 MHz

.4 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

25

150 Cel

.36 pF

SILICON

40 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

3N35

Texas Instruments

NPN

SINGLE

NO

150 MHz

.125 W

.02 A

METAL

AMPLIFIER

WIRE

ROUND

1

VERY HIGH FREQUENCY BAND

4

CYLINDRICAL

Other Transistors

150 Cel

SILICON

30 V

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-12

TIS108

Texas Instruments

NPN

SINGLE

NO

3.5 MHz

.25 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

25

150 Cel

SILICON

30 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

A5T3572

Texas Instruments

NPN

SINGLE

NO

1000 MHz

.5 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

20

150 Cel

.85 pF

SILICON

13 V

BOTTOM

O-PBCY-W3

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

2N5399

Texas Instruments

NPN

SINGLE

NO

600 MHz

.36 W

.1 A

METAL

SWITCHING

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

175 Cel

3 pF

SILICON

15 V

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-46

NOT SPECIFIED

NOT SPECIFIED

TIS87

Texas Instruments

NPN

SINGLE

NO

500 MHz

.4 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

30

150 Cel

SILICON

45 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

2N4261

Texas Instruments

PNP

SINGLE

NO

2 MHz

.2 W

.03 A

METAL

AMPLIFIER

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

CYLINDRICAL

Other Transistors

30

200 Cel

2.5 pF

SILICON

15 V

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

A5T3571

Texas Instruments

NPN

SINGLE

NO

1200 MHz

.5 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

20

150 Cel

.85 pF

SILICON

15 V

BOTTOM

O-PBCY-W3

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

TIS105

Texas Instruments

NPN

SINGLE

NO

.75 MHz

.4 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

30

150 Cel

1 pF

SILICON

45 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

RF Small Signal Bipolar Junction Transistors (BJT)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few milliwatts to a few watts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.