Toshiba RF Small Signal Bipolar Junction Transistors (BJT) 910

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Manufacturers (1)
    • Toshiba
    • Broadcom
    • Central Semiconductor
    • Defense Logistics Agency
    • Diodes Incorporated
    • Fairchild Semiconductor
    • Infineon Technologies
    • Intersil
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • National Semiconductor
    • Nte Electronics
    • Onsemi
    • ROHM
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Skyworks Solutions
    • Texas Instruments
    • Tt Electronics Plc
    • Vishay Telefunken
Polarity or Channel Type
    • N-CHANNEL
    • NPN
    • NPN AND PNP
    • PNP
Configuration
    • COMMON EMITTER, 2 ELEMENTS
    • COMPLEX
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 4 ELEMENTS
    • SEPARATE, 5 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SERIES, 2 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT IN ACTIVE BIASING ELEMENT
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount
    • NO
    • YES
Nominal Transition Frequency (fT)
    • .75 MHz
    • 1.6 MHz
    • 100 MHz
    • 1000 MHz
    • 10000 MHz
    • 10500 MHz
    • 10600 MHz
    • 10800 MHz
    • 11.2 MHz
    • 11.5 MHz
    • 110 MHz
    • 1100 MHz
    • 11000 MHz
    • 110000 MHz
    • 1150 MHz
    • 11500 MHz
    • 12.5 MHz
    • 1200 MHz
    • 12000 MHz
    • 12500 MHz
    • 12600 MHz
    • 1300 MHz
    • 13000 MHz
    • 1350 MHz
    • 13500 MHz
    • 1400 MHz
    • 14000 MHz
    • 14500 MHz
    • 150 MHz
    • 1500 MHz
    • 15000 MHz
    • 15500 MHz
    • 16 MHz
    • 1600 MHz
    • 16000 MHz
    • 16500 MHz
    • 1700 MHz
    • 17000 MHz
    • 17500 MHz
    • 1800 MHz
    • 18000 MHz
    • 1900 MHz
    • 19000 MHz
    • 2 MHz
    • 200 MHz
    • 2000 MHz
    • 20000 MHz
    • 2100 MHz
    • 21000 MHz
    • 2200 MHz
    • 22000 MHz
    • 230 MHz
    • 2300 MHz
    • 23000 MHz
    • 2400 MHz
    • 24000 MHz
    • 25 MHz
    • 250 MHz
    • 2500 MHz
    • 25000 MHz
    • 260 MHz
    • 26000 MHz
    • 26500 MHz
    • 27500 MHz
    • 2800 MHz
    • 28000 MHz
    • 28500 MHz
    • 2900 MHz
    • 29000 MHz
    • 3.5 MHz
    • 300 MHz
    • 3000 MHz
    • 30000 MHz
    • 320 MHz
    • 3200 MHz
    • 32500 MHz
    • 34000 MHz
    • 350 MHz
    • 3500 MHz
    • 35000 MHz
    • 3600 MHz
    • 36000 MHz
    • 361 MHz
    • 3700 MHz
    • 37000 MHz
    • 3800 MHz
    • 38000 MHz
    • 390 MHz
    • 39000 MHz
    • 40 MHz
    • 400 MHz
    • 4000 MHz
    • 40000 MHz
    • 41000 MHz
    • 4200 MHz
    • 42000 MHz
    • 4300 MHz
    • 43000 MHz
    • 440 MHz
    • 4400 MHz
    • 44000 MHz
    • 450 MHz
    • 4500 MHz
    • 45000 MHz
    • 46000 MHz
    • 470 MHz
    • 47000 MHz
    • 490 MHz
    • 500 MHz
    • 5000 MHz
    • 510 MHz
    • 53000 MHz
    • 550 MHz
    • 5500 MHz
    • 55000 MHz
    • 560 MHz
    • 5800 MHz
    • 6.5 MHz
    • 600 MHz
    • 6000 MHz
    • 60000 MHz
    • 620 MHz
    • 650 MHz
    • 6500 MHz
    • 65000 MHz
    • 6700 MHz
    • 690 MHz
    • 700 MHz
    • 7000 MHz
    • 70000 MHz
    • 7200 MHz
    • 7300 MHz
    • 750 MHz
    • 7500 MHz
    • 75000 MHz
    • 7700 MHz
    • 7800 MHz
    • 8 MHz
    • 80 MHz
    • 800 MHz
    • 8000 MHz
    • 80000 MHz
    • 850 MHz
    • 8500 MHz
    • 85000 MHz
    • 9 MHz
    • 90 MHz
    • 900 MHz
    • 9000 MHz
    • 90000 MHz
    • 940 MHz
    • 950 MHz
    • 9500 MHz
Maximum Power Dissipation (Abs)
    • .016 W
    • .03 W
    • .032 W
    • .035 W
    • .039 W
    • .04 W
    • .045 W
    • .05 W
    • .054 W
    • .055 W
    • .06 W
    • .08 W
    • .085 W
    • .09 W
    • .1 W
    • .105 W
    • .11 W
    • .115 W
    • .12 W
    • .125 W
    • .13 W
    • .135 W
    • .136 W
    • .14 W
    • .15 W
    • .16 W
    • .162 W
    • .175 W
    • .18 W
    • .185 W
    • .188 W
    • .19 W
    • .197 W
    • .2 W
    • .202 W
    • .205 W
    • .21 W
    • .22 W
    • .225 W
    • .23 W
    • .234 W
    • .24 W
    • .25 W
    • .273 W
    • .28 W
    • .29 W
    • .295 W
    • .3 W
    • .33 W
    • .333 W
    • .35 W
    • .36 W
    • .365 W
    • .37 W
    • .38 W
    • .4 W
    • .41 W
    • .45 W
    • .48 W
    • .5 W
    • .58 W
    • .6 W
    • .625 W
    • .64 W
    • .65 W
    • .67 W
    • .69 W
    • .7 W
    • .735 W
    • .75 W
    • .8 W
    • .886 W
    • .9 W
    • 1 W
    • 1.15 W
    • 1.2 W
    • 1.25 W
    • 1.4 W
    • 1.5 W
    • 1.7 W
    • 1.8 W
    • 1.9 W
    • 12 W
    • 150 W
    • 2 W
    • 2.1 W
    • 2.7 W
    • 3 W
    • 3.5 W
    • 3.75 W
    • 4 W
    • 4.5 W
    • 4.9 W
    • 5 W
    • 6 W
    • 6.3 W
    • 7 W
    • 70 W
    • 8 W
    • 8.3 W
    • 8.75 W
    • 8.8 W
    • 80 W
    • 85 W
Maximum Collector Current (IC)
    • .00009 A
    • .0001 A
    • .0002 A
    • .0004 A
    • .0005 A
    • .002 A
    • .0036 A
    • .004 A
    • .005 A
    • .006 A
    • .0065 A
    • .007 A
    • .008 A
    • .01 A
    • .0113 A
    • .012 A
    • .015 A
    • .016 A
    • .018 A
    • .02 A
    • .024 A
    • .025 A
    • .026 A
    • .03 A
    • .032 A
    • .035 A
    • .036 A
    • .037 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .065 A
    • .07 A
    • .075 A
    • .08 A
    • .09 A
    • .1 A
    • .12 A
    • .15 A
    • .2 A
    • .21 A
    • .23 A
    • .25 A
    • .3 A
    • .32 A
    • .35 A
    • .4 A
    • .425 A
    • .5 A
    • .6 A
    • .64 A
    • .65 A
    • .7 A
    • .75 A
    • .8 A
    • 1 A
    • 1.1 A
    • 1.25 A
    • 10 A
    • 120 A
    • 3 A
    • 6 A
    • 7 A
Package Body Material
    • CERAMIC, GLASS-SEALED
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Maximum VCEsat
    • .2 V
    • .25 V
    • .3 V
    • .4 V
    • .45 V
    • .5 V
    • .6 V
    • 1 V
    • 1.6 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.9 dB
    • 11 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 13 dB
    • 13.5 dB
    • 14 dB
    • 14.5 dB
    • 15 dB
    • 15.5 dB
    • 16 dB
    • 16.5 dB
    • 17 dB
    • 17.5 dB
    • 18 dB
    • 19.5 dB
    • 20 dB
    • 21 dB
    • 22 dB
    • 28 dB
    • 29 dB
    • 30 dB
    • 6 dB
    • 7 dB
    • 7.5 dB
    • 8 dB
    • 8.5 dB
    • 9 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 5
    • 6
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • MILLIMETER WAVE BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
No. of Terminals
    • 14
    • 16
    • 2
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • BIP General Purpose Small Signal
    • BIP RF Small Signal
    • BIP RF Small Signals
    • Other Transistors
Maximum Power Dissipation Ambient
    • .016 W
    • .03 W
    • .032 W
    • .05 W
    • .054 W
    • .1 W
    • .12 W
    • .125 W
    • .135 W
    • .14 W
    • .15 W
    • .188 W
    • .2 W
    • .225 W
    • .227 W
    • .25 W
    • .28 W
    • .3 W
    • .33 W
    • .35 W
    • .375 W
    • .4 W
    • .45 W
    • .48 W
    • .5 W
    • .65 W
    • .7 W
    • .75 W
    • .8 W
    • 1 W
    • 1.15 W
    • 1.2 W
    • 1.4 W
    • 1.5 W
    • 1.9 W
    • 12 W
    • 2 W
    • 2.1 W
    • 2.7 W
    • 2.9 W
    • 3 W
    • 3.5 W
    • 3.75 W
    • 4 W
    • 4.5 W
    • 5 W
    • 6 W
    • 7.2 W
Minimum DC Current Gain (hFE)
    • 10
    • 100
    • 110
    • 120
    • 125
    • 130
    • 132
    • 135
    • 140
    • 15
    • 150
    • 155
    • 160
    • 170
    • 18
    • 20
    • 200
    • 205
    • 220
    • 235
    • 25
    • 250
    • 27
    • 270
    • 28
    • 29
    • 30
    • 300
    • 35
    • 39
    • 40
    • 400
    • 45
    • 48
    • 5
    • 50
    • 54
    • 55
    • 56
    • 60
    • 65
    • 67
    • 70
    • 72
    • 75
    • 80
    • 82
    • 85
    • 90
    • 95
    • 97
Maximum Operating Temperature
    • 125 Cel
    • 128 Cel
    • 135 Cel
    • 150 Cel
    • 165 Cel
    • 175 Cel
    • 180 Cel
    • 200 Cel
    • 85 Cel
Maximum Collector-Base Capacitance
    • .01 pF
    • .08 pF
    • .084 pF
    • .1 pF
    • .12 pF
    • .13 pF
    • .14 pF
    • .15 pF
    • .16 pF
    • .17 pF
    • .2 pF
    • .22 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .27 pF
    • .28 pF
    • .29 pF
    • .3 pF
    • .34 pF
    • .35 pF
    • .36 pF
    • .4 pF
    • .41 pF
    • .42 pF
    • .44 pF
    • .45 pF
    • .46 pF
    • .48 pF
    • .5 pF
    • .52 pF
    • .53 pF
    • .54 pF
    • .55 pF
    • .57 pF
    • .6 pF
    • .65 pF
    • .67 pF
    • .7 pF
    • .72 pF
    • .74 pF
    • .75 pF
    • .8 pF
    • .85 pF
    • .9 pF
    • .95 pF
    • 1 pF
    • 1.05 pF
    • 1.1 pF
    • 1.15 pF
    • 1.2 pF
    • 1.25 pF
    • 1.3 pF
    • 1.35 pF
    • 1.4 pF
    • 1.45 pF
    • 1.5 pF
    • 1.55 pF
    • 1.6 pF
    • 1.7 pF
    • 1.8 pF
    • 1.85 pF
    • 1.9 pF
    • 10 pF
    • 15 pF
    • 2 pF
    • 2.2 pF
    • 2.3 pF
    • 2.5 pF
    • 2.75 pF
    • 2.9 pF
    • 20 pF
    • 3 pF
    • 3.2 pF
    • 3.5 pF
    • 300 pF
    • 4 pF
    • 4.2 pF
    • 4.3 pF
    • 4.5 pF
    • 4.7 pF
    • 5 pF
    • 5.23 pF
    • 6 pF
    • 6.5 pF
    • 7 pF
    • 8 pF
    • 9 pF
Transistor Element Material
    • GALLIUM ARSENIDE
    • SILICON
    • SILICON GERMANIUM
    • SILICON GERMANIUM CARBON
Maximum Collector-Emitter Voltage
    • 10 V
    • 100 V
    • 11 V
    • 12 V
    • 120 V
    • 13 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 18 V
    • 19 V
    • 2.25 V
    • 2.3 V
    • 2.5 V
    • 2.8 V
    • 20 V
    • 23 V
    • 25 V
    • 27 V
    • 28 V
    • 3 V
    • 3.3 V
    • 3.5 V
    • 30 V
    • 33 V
    • 35 V
    • 36 V
    • 4 V
    • 4.1 V
    • 4.2 V
    • 4.3 V
    • 4.5 V
    • 40 V
    • 45 V
    • 48 V
    • 5 V
    • 5.3 V
    • 5.5 V
    • 50 V
    • 6 V
    • 6.1 V
    • 6.5 V
    • 60 V
    • 65 V
    • 7 V
    • 7.2 V
    • 8 V
    • 80 V
    • 9 V
    • 9.2 V
    • 9.5 V
    • 90 V
    • 95 V
Maximum Turn On Time (ton)
    • 12 ns
    • 15 ns
    • 20 ns
    • 35 ns
    • 38 ns
    • 45 ns
    • 60 ns
    • 70 ns
Minimum Operating Temperature
    • -40 Cel
    • -55 Cel
    • -65 Cel
    • 150 Cel
Maximum Turn Off Time (toff)
    • 100 ns
    • 18 ns
    • 190 ns
    • 20 ns
    • 285 ns
    • 30 ns
    • 300 ns
    • 35 ns
    • 40 ns
    • 75 ns
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • MATTE TIN/TIN BISMUTH
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL PALLADIUM GOLD
    • PALLADIUM GOLD
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN OVER COPPER
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Bismuth (Sn98Bi2)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • TRIPLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CRFM-F2
    • O-CRMW-F4
    • O-CRPM-F3
    • O-CRPM-F4
    • O-CXFM-F2
    • O-CXMW-F4
    • O-MBCY-W3
    • O-MBCY-W4
    • O-MBCY-W6
    • O-MRDB-F4
    • O-MUPM-P3
    • O-PBCY-P3
    • O-PBCY-T3
    • O-PBCY-W3
    • O-PRDB-F3
    • O-PRDB-F4
    • O-PRDB-G4
    • O-PRFM-F2
    • O-PRPM-F4
    • O-XRDB-F4
    • O-XRPM-F4
    • R-CDFM-F2
    • R-CDFP-F16
    • R-CDIP-T16
    • R-CDSO-G8
    • R-CDSO-N3
    • R-GDIP-T16
    • R-MDFM-F2
    • R-PBCC-N3
    • R-PBCY-T3
    • R-PDFP-F3
    • R-PDFP-F4
    • R-PDIP-T14
    • R-PDIP-T16
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-F8
    • R-PDSO-G14
    • R-PDSO-G16
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSIP-W3
    • R-PSSO-F3
    • R-PSSO-G3
    • R-PSSO-G4
    • R-XBCC-N3
    • R-XBCC-N6
    • R-XBCC-N7
    • R-XDFM-F6
    • R-XUUC-N16
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • S-CDMW-F6
    • S-CQMW-F4
    • S-CTMW-F5
    • S-CXMW-F4
    • S-PBCC-N7
    • S-PQCC-N16
    • S-PQSO-N8
    • S-XBCC-N7
    • S-XUUC-N2
    • S-XUUC-N3
    • X-CQMW-F4
    • X-CXMW-F4
    • X-XUUC-N
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • NOT APPLICABLE
Case Connection
    • BASE
    • COLLECTOR
    • EMITTER
    • ISOLATED
    • SHIELD
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • BUILT IN EMITTER BALLASTING RESISTOR
    • BUILT-IN EMITTER BALLASTING RESISTORS
    • ESD PROTECTED, LOW NOISE
    • EUROPEAN PART NUMBER
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, DIFFUSED BALLAST RESISTORS
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, LOW NOISE
    • HIGH RELIABILITY, LOW NOISE, TR, 7 INCH : 3000
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY; WITH EMITTER BALLASTING RESISTOR
    • HIGH SPEED SATURATED SWITCHING
    • HIGH VOLTAGE, HIGH RELIABILITY
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
    • LOW NOISE, TR7:3
    • TR, 7 INCH: 3000
    • TUNER
    • WITH EMITTER BALLASTING RESISTORS
    • WITH EMITTER BALLASTING RESISTORS, HIGH RELIABILITY
JEDEC-95 Code
    • MO-252
    • MS-001AA
    • MS-001BB
    • MS-012AA
    • MS-012AB
    • MS-012AC
    • TO-117
    • TO-12
    • TO-126
    • TO-18
    • TO-202
    • TO-205AD
    • TO-236
    • TO-236AA
    • TO-236AB
    • TO-236AF
    • TO-243
    • TO-243AA
    • TO-253AA
    • TO-33
    • TO-39
    • TO-46
    • TO-60
    • TO-72
    • TO-78
    • TO-92
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e3/e6
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 235
    • 240
    • 260
    • NOT SPECIFIED
Reference Standard
    • AEC-Q101
    • AEC-Q101; IEC-60134
    • CECC
    • ESA-SCC-5611/006
    • ESA-SCC-5611/008
    • EUROPEAN SPACE AGENCY
    • IEC-134
    • IEC-60134
    • MIL-19500
    • MIL-19500/301H
    • MIL-19500/343F
    • MIL-19500/398
    • MIL-19500/426
    • MIL-38535
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

HN3C02FTE85L

Toshiba

NPN

SEPARATE, 2 ELEMENTS

YES

2400 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

6

SMALL OUTLINE

40

125 Cel

.85 pF

SILICON

15 V

DUAL

R-PDSO-G6

Not Qualified

2SC5089

Toshiba

NPN

SINGLE

YES

10000 MHz

.04 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

50

125 Cel

.95 pF

SILICON

10 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e0

MY6L03AT

Toshiba

NPN

SEPARATE, 2 ELEMENTS

YES

10000 MHz

.04 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

6

SMALL OUTLINE

1.15 pF

SILICON

5 V

DUAL

R-PDSO-G6

Not Qualified

LOW NOISE

2SC5259

Toshiba

NPN

SINGLE

YES

12000 MHz

.015 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

50

125 Cel

.7 pF

SILICON

7 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e0

2SC5260-O

Toshiba

NPN

SINGLE

YES

12000 MHz

.1 W

.015 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

80

125 Cel

.7 pF

SILICON

7 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e0

2SC5108F-Y

Toshiba

NPN

SINGLE

YES

6000 MHz

.1 W

.03 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

120

125 Cel

.9 pF

SILICON

10 V

TIN LEAD

DUAL

R-PDSO-F3

Not Qualified

e0

MT3S45T

Toshiba

NPN

SINGLE

YES

18000 MHz

.1 W

.03 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

70

150 Cel

1.1 pF

SILICON

4.5 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-F3

COLLECTOR

Not Qualified

LOW NOISE

e0

2SC5108FT-Y

Toshiba

NPN

SINGLE

YES

6000 MHz

.1 W

.03 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

120

125 Cel

.9 pF

SILICON

10 V

TIN LEAD

DUAL

R-PDSO-F3

Not Qualified

e0

2SC5256-R

Toshiba

NPN

SINGLE

YES

12000 MHz

.1 W

.04 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

50

125 Cel

.8 pF

SILICON

7 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

2SC5091FT-O

Toshiba

NPN

SINGLE

YES

10000 MHz

.04 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

125 Cel

.95 pF

SILICON

8 V

TIN LEAD

DUAL

R-PDSO-F3

Not Qualified

LOW NOISE

e0

2SC5086-OTE85R

Toshiba

NPN

SINGLE

YES

7000 MHz

.08 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

80

125 Cel

1.15 pF

SILICON

12 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

2SC5257O

Toshiba

NPN

SINGLE

YES

12000 MHz

.15 W

.04 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

Other Transistors

80

128 Cel

.85 pF

SILICON

7 V

TIN LEAD

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

LOW NOISE

e0

2SC2995-Y

Toshiba

NPN

SINGLE

NO

350 MHz

.2 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

IN-LINE

Other Transistors

120

125 Cel

1.3 pF

SILICON

30 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSIP-T3

Not Qualified

e0

2SC5256FTR

Toshiba

NPN

SINGLE

YES

9000 MHz

.1 W

.04 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

125 Cel

TIN LEAD

DUAL

R-PDSO-F3

Not Qualified

e0

MT3S04A

Toshiba

NPN

SINGLE

YES

7000 MHz

.1 W

.04 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

80

125 Cel

1.15 pF

SILICON

5 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e0

S2C5095-O

Toshiba

NPN

SINGLE

YES

10000 MHz

.015 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.85 pF

SILICON

10 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e0

2SC3124TE85L

Toshiba

NPN

SINGLE

YES

1100 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

40

125 Cel

1.3 pF

SILICON

15 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

TO-236

e0

HN2C10FT

Toshiba

NPN

SEPARATE, 2 ELEMENTS

YES

7000 MHz

.08 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

6

SMALL OUTLINE

Other Transistors

80

125 Cel

1.05 pF

SILICON

12 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G6

Not Qualified

LOW NOISE

e0

2SC5094

Toshiba

NPN

SINGLE

YES

10000 MHz

.015 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

50

125 Cel

.85 pF

SILICON

10 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e0

2SC5317F

Toshiba

NPN

SINGLE

YES

9000 MHz

.1 W

.02 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

50

125 Cel

.85 pF

SILICON

5 V

TIN LEAD

DUAL

R-PDSO-F3

Not Qualified

LOW NOISE

e0

2SC2668

Toshiba

NPN

SINGLE

NO

550 MHz

.1 W

.02 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

IN-LINE

Other Transistors

40

125 Cel

SILICON

30 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSIP-T3

Not Qualified

LOW NOISE

e0

2SC5066F

Toshiba

NPN

SINGLE

YES

7000 MHz

.03 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

80

125 Cel

.9 pF

SILICON

12 V

TIN LEAD

DUAL

R-PDSO-F3

Not Qualified

LOW NOISE

e0

2SC5088-Y

Toshiba

NPN

SINGLE

YES

7000 MHz

.1 W

.08 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

Other Transistors

120

125 Cel

1.6 pF

SILICON

12 V

TIN LEAD

DUAL

R-PDSO-G4

Not Qualified

LOW NOISE

e0

2SC5090-O

Toshiba

NPN

SINGLE

YES

10000 MHz

.04 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

125 Cel

.95 pF

SILICON

10 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e0

MT6C06E

Toshiba

NPN

SEPARATE, 2 ELEMENTS

YES

10000 MHz

.1 W

.015 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

6

SMALL OUTLINE

Other Transistors

70

125 Cel

.75 pF

SILICON

5 V

TIN LEAD

DUAL

R-PDSO-F6

Not Qualified

LOW NOISE

e0

MT3S106FS

Toshiba

NPN

SINGLE

YES

8500 MHz

.1 W

.08 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

110

150 Cel

.7 pF

SILICON GERMANIUM

6 V

DUAL

R-PDSO-F3

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

2SC2996-YTE85R

Toshiba

NPN

SINGLE

YES

350 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

120

125 Cel

1.3 pF

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

HN9C02FT

Toshiba

NPN

SEPARATE, 2 ELEMENTS

YES

12000 MHz

.04 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

6

SMALL OUTLINE

Other Transistors

80

125 Cel

SILICON

7 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G6

Not Qualified

LOW NOISE

e0

2SC2996-R

Toshiba

NPN

SINGLE

YES

350 MHz

.15 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

40

125 Cel

1.3 pF

SILICON

30 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

TO-236

e0

2SC5064

Toshiba

NPN

SINGLE

YES

7000 MHz

.03 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

80

125 Cel

.9 pF

SILICON

12 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

2SC3609TE85R

Toshiba

NPN

SINGLE

YES

7000 MHz

.08 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

30

125 Cel

1 pF

SILICON

12 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

LOW NOISE

2SC5256F

Toshiba

NPN

SINGLE

YES

12000 MHz

.04 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

50

125 Cel

.95 pF

SILICON

7 V

TIN LEAD

DUAL

R-PDSO-F3

Not Qualified

LOW NOISE

e0

MT3S04AFS

Toshiba

NPN

SINGLE

YES

7000 MHz

.085 W

.04 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

80

125 Cel

1.05 pF

SILICON

5 V

DUAL

R-PDSO-F3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SC5315

Toshiba

NPN

SINGLE

YES

9000 MHz

.15 W

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

50

125 Cel

SILICON

5 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e0

2SC5110-YTE85R

Toshiba

NPN

SINGLE

YES

6000 MHz

.06 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

120

125 Cel

.9 pF

SILICON

10 V

DUAL

R-PDSO-G3

Not Qualified

2SC3099TE85R

Toshiba

NPN

SINGLE

YES

4000 MHz

.03 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

30

125 Cel

SILICON

20 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

TO-236

e0

MT3S109FS

Toshiba

NPN

SINGLE

YES

7000 MHz

.1 W

.08 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

75

150 Cel

.95 pF

SILICON GERMANIUM

6 V

DUAL

R-PDSO-F3

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

2SC2714-OTE85R

Toshiba

NPN

SINGLE

YES

550 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

17 dB

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

70

125 Cel

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

2SC5089-RTE85L

Toshiba

NPN

SINGLE

YES

10000 MHz

.04 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

50

125 Cel

.95 pF

SILICON

10 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

HN3C01FU

Toshiba

NPN

SEPARATE, 2 ELEMENTS

YES

1400 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

2

VERY HIGH FREQUENCY BAND

6

SMALL OUTLINE

Other Transistors

40

125 Cel

.55 pF

SILICON

20 V

TIN LEAD

DUAL

R-PDSO-G6

Not Qualified

e0

MT3S03AFS

Toshiba

NPN

SINGLE

YES

10000 MHz

.085 W

.04 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

80

125 Cel

1 pF

SILICON

5 V

DUAL

R-PDSO-F3

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

HN3C08FTE85L

Toshiba

NPN

SEPARATE, 2 ELEMENTS

YES

10000 MHz

.015 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

6

SMALL OUTLINE

50

125 Cel

.75 pF

SILICON

10 V

DUAL

R-PDSO-G6

Not Qualified

LOW NOISE

2SC5064-Y

Toshiba

NPN

SINGLE

YES

7000 MHz

.15 W

.03 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

120

125 Cel

.9 pF

SILICON

12 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e0

2SC5085-O

Toshiba

NPN

SINGLE

YES

7000 MHz

.1 W

.08 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

80

125 Cel

1.15 pF

SILICON

12 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e0

2SC2995-O

Toshiba

NPN

SINGLE

NO

350 MHz

.2 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

IN-LINE

Other Transistors

70

125 Cel

1.3 pF

SILICON

30 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSIP-T3

Not Qualified

e0

HN9C01FE

Toshiba

NPN

SEPARATE, 2 ELEMENTS

YES

10000 MHz

.1 W

.015 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

6

SMALL OUTLINE

Other Transistors

50

125 Cel

SILICON

8 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-F6

Not Qualified

LOW NOISE

e0

2SC2996TE85R

Toshiba

NPN

SINGLE

YES

350 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

40

125 Cel

1.3 pF

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

S1D43

Toshiba

NPN

SINGLE

YES

23000 MHz

.008 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

SILICON

2.5 V

DUAL

R-PDSO-G4

Not Qualified

LOW NOISE

RF Small Signal Bipolar Junction Transistors (BJT)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few milliwatts to a few watts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.