YES RF Small Signal Field Effect Transistors (FET) 1,826

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Manufacturers
    • Agilent Technologies
    • Broadcom
    • California Eastern Laboratories
    • Central Semiconductor
    • Defense Logistics Agency
    • Diodes Incorporated
    • Fujitsu
    • Hewlett Packard
    • Infineon Technologies
    • Littelfuse
    • Microchip Technology
    • Mini-circuits
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • National Semiconductor
    • Nte Electronics
    • Onsemi
    • Qorvo
    • Renesas Electronics
    • Rf Micro Devices
    • STMicroelectronics
    • Samsung
    • Sanyo Electric
    • Sumitomo Electric Industries
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Vishay Intertechnology
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration
    • COMMON SOURCE, 2 ELEMENTS
    • COMPLEX
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN DIODE AND RESISTOR
    • SINGLE WITH BUILT-IN DIODE RESISTOR AND CAPACITOR
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount (1)
    • YES
    • NO
Maximum Power Dissipation (Abs)
    • .1 W
    • .125 W
    • .15 W
    • .16 W
    • .165 W
    • .175 W
    • .18 W
    • .2 W
    • .225 W
    • .25 W
    • .28 W
    • .3 W
    • .31 W
    • .33 W
    • .35 W
    • .36 W
    • .4 W
    • .5 W
    • .7 W
    • 10 W
    • 15 W
    • 250 W
    • 3 W
    • 35 W
    • 4.75 W
    • 5.7 W
    • 6 W
    • 7.4 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 104 V
    • 105 V
    • 11 V
    • 115 V
    • 12 V
    • 12.5 V
    • 13 V
    • 13.5 V
    • 135 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 18 V
    • 20 V
    • 25 V
    • 27 V
    • 3 V
    • 3.5 V
    • 30 V
    • 35 V
    • 4 V
    • 4.5 V
    • 40 V
    • 5 V
    • 5.5 V
    • 50 V
    • 6 V
    • 6.5 V
    • 65 V
    • 7 V
    • 7.5 V
    • 8 V
    • 9 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 11 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 13 dB
    • 13.5 dB
    • 14 dB
    • 14.5 dB
    • 14.9 dB
    • 15 dB
    • 15.3 dB
    • 15.5 dB
    • 16 dB
    • 16.5 dB
    • 17 dB
    • 17.5 dB
    • 18 dB
    • 18.5 dB
    • 19 dB
    • 2.5 dB
    • 20 dB
    • 21 dB
    • 22 dB
    • 22.8 dB
    • 23 dB
    • 23.2 dB
    • 23.5 dB
    • 24 dB
    • 25 dB
    • 27 dB
    • 28 dB
    • 29 dB
    • 5.5 dB
    • 5.8 dB
    • 6 dB
    • 6.5 dB
    • 6.7 dB
    • 7 dB
    • 7.5 dB
    • 8 dB
    • 8.5 dB
    • 8.7 dB
    • 9 dB
    • 9.4 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • DUAL GATE, ENHANCEMENT MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
Highest Frequency Band
    • C BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Drain Current (Abs) (ID)
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .021 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .384 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 10 A
    • 2 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
No. of Terminals
    • 10
    • 11
    • 12
    • 13
    • 15
    • 2
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET General Purpose Small Signals
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • .05 W
    • .1 W
    • .12 W
    • .125 W
    • .13 W
    • .15 W
    • .16 W
    • .165 W
    • .18 W
    • .2 W
    • .22 W
    • .225 W
    • .24 W
    • .25 W
    • .27 W
    • .29 W
    • .3 W
    • .31 W
    • .35 W
    • .355 W
    • .357 W
    • .36 W
    • .4 W
    • .5 W
    • .58 W
    • .6 W
    • .7 W
    • .72 W
    • .725 W
    • .8 W
    • .9 W
    • 1 W
    • 1.5 W
    • 10 W
    • 2.25 W
    • 2.5 W
    • 3 W
    • 3.3 W
    • 3.38 W
    • 3.5 W
    • 3.75 W
    • 5 W
    • 5.4 W
    • 6.25 W
    • 6.75 W
    • 7.4 W
    • 7.5 W
    • 70 W
    • 8.1 W
    • 8.75 W
    • 9 W
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 160 Cel
    • 165 Cel
    • 175 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
Transistor Element Material
    • Al/In GALLIUM ARSENIDE
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Lead (Sn80Pb20)
    • Tin/Silver/Copper (Sn/Ag/Cu)
Maximum Drain Current (ID)
    • .002 A
    • .005 A
    • .006 A
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .8 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.12 A
    • 1.2 A
    • 1.25 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 2 A
    • 2.1 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • DIE-8
    • O-CRDB-F4
    • O-MBCY-W3
    • O-MBCY-W4
    • O-PBCY-T3
    • O-PBCY-W3
    • O-PRDB-F4
    • O-XQMW-F4
    • O-XRDB-F4
    • O-XRDB-G4
    • R-CBCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFP-F2
    • R-CDFP-F4
    • R-CDSO-G8
    • R-CDSO-N3
    • R-CQMW-F4
    • R-CQSO-G4
    • R-MDSO-N4
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-F2
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-N10
    • R-PQFP-F4
    • R-PQMW-F4
    • R-PQSO-G4
    • R-PSFM-G4
    • R-PSFM-G5
    • R-PSFM-P4
    • R-PSFM-T4
    • R-PSIP-T3
    • R-PSIP-W3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-PSSO-G2
    • R-PXMW-F4
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDCC-N8
    • R-XDFM-F2
    • R-XQMW-F4
    • R-XRDB-F4
    • R-XUUC-N
    • R-XUUC-N10
    • R-XUUC-N11
    • R-XUUC-N12
    • R-XUUC-N13
    • R-XUUC-N15
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFP-F2
    • S-CQMW-F4
    • S-PDSO-N10
    • S-PDSO-N8
    • S-PQMW-F4
    • S-PQSO-G4
    • S-XUUC-N2
    • S-XUUC-N4
    • X-CQMW-F4
    • X-CXDB-F4
    • X-CXMW-F4
    • X-PXMW-G4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • GATE
    • ISOLATED
    • SOURCE
    • SOURCE AND SUBSTRATE
    • SUBSTRATE
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • CASCODE J-FET
    • CASCODE MOS
    • EUROPEAN PART NUMBER
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, LOW NOISE
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-106
    • TO-18
    • TO-206AF
    • TO-226
    • TO-226AA
    • TO-236
    • TO-236AB
    • TO-251
    • TO-252
    • TO-39
    • TO-72
    • TO-92
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 230
    • 235
    • 240
    • 250
    • 260
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .02 pF
    • .025 pF
    • .027 pF
    • .03 pF
    • .035 pF
    • .04 pF
    • .045 pF
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .15 pF
    • .25 pF
    • .35 pF
    • .4 pF
    • .5 pF
    • .6 pF
    • .65 pF
    • .7 pF
    • .8 pF
    • .9 pF
    • 1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.5 pF
    • 1.7 pF
    • 2 pF
    • 2.5 pF
    • 3 pF
    • 35 pF
    • 4 pF
    • 4.5 pF
    • 45 pF
    • 60 pF
Reference Standard
    • AEC-Q101
    • ESA-SCC-5613/002
    • ESA-SCC-5613/008
    • ESA/SCC 5613/002
    • ESA/SCC 5613/004
    • ESA/SCC 5614/006
    • IEC-134
    • IEC-60134
    • MIL-19500/375G
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BF1215

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

6 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G6

1

Not Qualified

LOW NOISE

e3

934063138215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

SILICON

DUAL

R-PDSO-G3

TO-236AB

BF556B

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e3

BF901R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

BF988

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

FLAT

ROUND

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

DISK BUTTON

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

RADIAL

O-PRDB-F4

Not Qualified

934063996115

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

6 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 A

DUAL

R-PDSO-G6

LOW NOISE

BF556B-TAPE-13

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

934050320135

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

7 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

e3

.04 pF

BF1109WR

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

11 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

.04 pF

PMBF5486

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

1 pF

BF1211R,215

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

.18 W

PLASTIC/EPOXY

AMPLIFIER

6 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

.03 pF

BF1109R,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

11 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

.04 pF

934064551115

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

6 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

LOW NOISE

BF1109

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

11 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

.04 pF

PMBF5486T/R

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

1 pF

BF901-TAPE-7

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

BF908TRL

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.04 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

e3

45 pF

934057513135

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

6 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

LOW NOISE

.03 pF

934031480115

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

7 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

.035 pF

BF1212WR,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.18 W

PLASTIC/EPOXY

AMPLIFIER

6 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

LOW NOISE

e3

.03 pF

934055823135

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

7 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.04 A

DUAL

R-PDSO-G6

Not Qualified

LOW NOISE

e3

.05 pF

BF1211,215

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

.18 W

PLASTIC/EPOXY

AMPLIFIER

6 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

.03 pF

934057517215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

6 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

LOW NOISE

.03 pF

BF1102R,115

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

7 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

.04 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.04 A

DUAL

R-PDSO-G6

Not Qualified

LOW NOISE

e3

.05 pF

934061588215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

3 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.01 A

DUAL

R-PDSO-G4

GATE

934002640215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

2

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

BF904

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

7 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.03 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

LOW NOISE

e3

30

260

.035 pF

BF904AWR,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

7 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

.035 pF

PMBF5484T/R

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

1 pF

BF1211R

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

.18 W

PLASTIC/EPOXY

AMPLIFIER

6 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

.03 pF

934031450115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

2

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

934028860215

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

7 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.04 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

.05 pF

BF908WR-T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

.045 pF

BF1100-TAPE-13

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

14 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

.035 pF

PMBF5485-TAPE-7

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

1 pF

BF1100TRL

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

14 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

e3

.035 pF

BF1100R-T

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

14 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

.035 pF

934054110215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

7 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

.035 pF

BF908R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.04 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

LOW NOISE

e3

30

260

45 pF

BF904WR-TAPE-13

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

7 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

.035 pF

PMBFJ308-TAPE-13

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

2.5 pF

BF908-TAPE-13

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

.045 pF

934058936115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

6 V

21 dB

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 A

DUAL

R-PDSO-G6

ISOLATED

LOW NOISE

BF908WR-TAPE-13

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

.045 pF

934055134215

NXP Semiconductors

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

7 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

LOW NOISE

.035 pF

934063127215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

3 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.01 A

DUAL

R-PDSO-G3

934054140215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

11 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

.04 pF

PMBFJ310-T

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

TO-236AB

2.5 pF

RF Small Signal Field Effect Transistors (FET)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.