NXP Semiconductors RF Small Signal Field Effect Transistors (FET) 622

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Manufacturers (1)
    • NXP Semiconductors
    • Agilent Technologies
    • Broadcom
    • California Eastern Laboratories
    • Central Semiconductor
    • Defense Logistics Agency
    • Diodes Incorporated
    • Fujitsu
    • Hewlett Packard
    • Infineon Technologies
    • Littelfuse
    • Microchip Technology
    • Mini-circuits
    • Mitsubishi Electric
    • Motorola
    • National Semiconductor
    • Nte Electronics
    • Onsemi
    • Qorvo
    • Renesas Electronics
    • Rf Micro Devices
    • STMicroelectronics
    • Samsung
    • Sanyo Electric
    • Sumitomo Electric Industries
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Vishay Intertechnology
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration
    • COMMON SOURCE, 2 ELEMENTS
    • COMPLEX
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN DIODE AND RESISTOR
    • SINGLE WITH BUILT-IN DIODE RESISTOR AND CAPACITOR
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount
    • NO
    • YES
Maximum Power Dissipation (Abs)
    • .1 W
    • .125 W
    • .15 W
    • .16 W
    • .165 W
    • .175 W
    • .18 W
    • .2 W
    • .225 W
    • .25 W
    • .28 W
    • .3 W
    • .31 W
    • .33 W
    • .35 W
    • .36 W
    • .4 W
    • .5 W
    • .7 W
    • 10 W
    • 15 W
    • 250 W
    • 3 W
    • 35 W
    • 4.75 W
    • 5.7 W
    • 6 W
    • 7.4 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 104 V
    • 105 V
    • 11 V
    • 115 V
    • 12 V
    • 12.5 V
    • 13 V
    • 13.5 V
    • 135 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 18 V
    • 20 V
    • 25 V
    • 27 V
    • 3 V
    • 3.5 V
    • 30 V
    • 35 V
    • 4 V
    • 4.5 V
    • 40 V
    • 5 V
    • 5.5 V
    • 50 V
    • 6 V
    • 6.5 V
    • 65 V
    • 7 V
    • 7.5 V
    • 8 V
    • 9 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 11 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 13 dB
    • 13.5 dB
    • 14 dB
    • 14.5 dB
    • 14.9 dB
    • 15 dB
    • 15.3 dB
    • 15.5 dB
    • 16 dB
    • 16.5 dB
    • 17 dB
    • 17.5 dB
    • 18 dB
    • 18.5 dB
    • 19 dB
    • 2.5 dB
    • 20 dB
    • 21 dB
    • 22 dB
    • 22.8 dB
    • 23 dB
    • 23.2 dB
    • 23.5 dB
    • 24 dB
    • 25 dB
    • 27 dB
    • 28 dB
    • 29 dB
    • 5.5 dB
    • 5.8 dB
    • 6 dB
    • 6.5 dB
    • 6.7 dB
    • 7 dB
    • 7.5 dB
    • 8 dB
    • 8.5 dB
    • 8.7 dB
    • 9 dB
    • 9.4 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • DUAL GATE, ENHANCEMENT MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
Highest Frequency Band
    • C BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Drain Current (Abs) (ID)
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .021 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .384 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 10 A
    • 2 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
No. of Terminals
    • 10
    • 11
    • 12
    • 13
    • 15
    • 2
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET General Purpose Small Signals
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • .05 W
    • .1 W
    • .12 W
    • .125 W
    • .13 W
    • .15 W
    • .16 W
    • .165 W
    • .18 W
    • .2 W
    • .22 W
    • .225 W
    • .24 W
    • .25 W
    • .27 W
    • .29 W
    • .3 W
    • .31 W
    • .35 W
    • .355 W
    • .357 W
    • .36 W
    • .4 W
    • .5 W
    • .58 W
    • .6 W
    • .7 W
    • .72 W
    • .725 W
    • .8 W
    • .9 W
    • 1 W
    • 1.5 W
    • 10 W
    • 2.25 W
    • 2.5 W
    • 3 W
    • 3.3 W
    • 3.38 W
    • 3.5 W
    • 3.75 W
    • 5 W
    • 5.4 W
    • 6.25 W
    • 6.75 W
    • 7.4 W
    • 7.5 W
    • 70 W
    • 8.1 W
    • 8.75 W
    • 9 W
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 160 Cel
    • 165 Cel
    • 175 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
Transistor Element Material
    • Al/In GALLIUM ARSENIDE
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Lead (Sn80Pb20)
    • Tin/Silver/Copper (Sn/Ag/Cu)
Maximum Drain Current (ID)
    • .002 A
    • .005 A
    • .006 A
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .8 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.12 A
    • 1.2 A
    • 1.25 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 2 A
    • 2.1 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • DIE-8
    • O-CRDB-F4
    • O-MBCY-W3
    • O-MBCY-W4
    • O-PBCY-T3
    • O-PBCY-W3
    • O-PRDB-F4
    • O-XQMW-F4
    • O-XRDB-F4
    • O-XRDB-G4
    • R-CBCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFP-F2
    • R-CDFP-F4
    • R-CDSO-G8
    • R-CDSO-N3
    • R-CQMW-F4
    • R-CQSO-G4
    • R-MDSO-N4
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-F2
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-N10
    • R-PQFP-F4
    • R-PQMW-F4
    • R-PQSO-G4
    • R-PSFM-G4
    • R-PSFM-G5
    • R-PSFM-P4
    • R-PSFM-T4
    • R-PSIP-T3
    • R-PSIP-W3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-PSSO-G2
    • R-PXMW-F4
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDCC-N8
    • R-XDFM-F2
    • R-XQMW-F4
    • R-XRDB-F4
    • R-XUUC-N
    • R-XUUC-N10
    • R-XUUC-N11
    • R-XUUC-N12
    • R-XUUC-N13
    • R-XUUC-N15
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFP-F2
    • S-CQMW-F4
    • S-PDSO-N10
    • S-PDSO-N8
    • S-PQMW-F4
    • S-PQSO-G4
    • S-XUUC-N2
    • S-XUUC-N4
    • X-CQMW-F4
    • X-CXDB-F4
    • X-CXMW-F4
    • X-PXMW-G4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • GATE
    • ISOLATED
    • SOURCE
    • SOURCE AND SUBSTRATE
    • SUBSTRATE
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • CASCODE J-FET
    • CASCODE MOS
    • EUROPEAN PART NUMBER
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, LOW NOISE
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-106
    • TO-18
    • TO-206AF
    • TO-226
    • TO-226AA
    • TO-236
    • TO-236AB
    • TO-251
    • TO-252
    • TO-39
    • TO-72
    • TO-92
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 230
    • 235
    • 240
    • 250
    • 260
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .02 pF
    • .025 pF
    • .027 pF
    • .03 pF
    • .035 pF
    • .04 pF
    • .045 pF
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .15 pF
    • .25 pF
    • .35 pF
    • .4 pF
    • .5 pF
    • .6 pF
    • .65 pF
    • .7 pF
    • .8 pF
    • .9 pF
    • 1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.5 pF
    • 1.7 pF
    • 2 pF
    • 2.5 pF
    • 3 pF
    • 35 pF
    • 4 pF
    • 4.5 pF
    • 45 pF
    • 60 pF
Reference Standard
    • AEC-Q101
    • ESA-SCC-5613/002
    • ESA-SCC-5613/008
    • ESA/SCC 5613/002
    • ESA/SCC 5613/004
    • ESA/SCC 5614/006
    • IEC-134
    • IEC-60134
    • MIL-19500/375G
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BF512TRL

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G3

Not Qualified

e3

BF992-TAPE-7

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

.04 pF

BF990ATRL13

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

18 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

BF998WR-TAPE-7

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

BF545CT/R

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e3

BF990AR

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

18 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

BF990A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

18 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

BF992R-TAPE-13

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

.04 pF

BF998WRT/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

2

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

BF994ST/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

2

VERY HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

e3

260

BF998WR-TAPE-13

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

BF997-T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

BF996STRL13

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

e3

BF998-T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

2

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

BF998TRL13

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

e3

CLF1G0060-30U

NXP Semiconductors

N-CHANNEL

FET RF Small Signals

250 Cel

BF511-TAPE-13

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G3

Not Qualified

.4 pF

BF990ART/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

18 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

BF545BTRL

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

Not Qualified

e3

BF991-T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.02 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

BF510-TAPE-7

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G3

Not Qualified

.4 pF

BF990AR-T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

18 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

CLF1G0060S-10U

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

2

FLATPACK

HIGH ELECTRON MOBILITY

GALLIUM NITRIDE

DUAL

R-CDFP-F2

SOURCE

IEC-60134

BF513TRL

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G3

Not Qualified

e3

BF990A-TAPE-7

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

18 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

BF998-TAPE-13

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

BF992R-TAPE-7

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

.04 pF

BF998T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

2

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

260

BF994S-T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

2

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

BLF188XR

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

135 V

23.2 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-CDFM-F4

NOT APPLICABLE

SOURCE

NOT SPECIFIED

NOT SPECIFIED

IEC-60134

BF513-TAPE-13

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G3

Not Qualified

.4 pF

BF545ATRL13

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

Not Qualified

e3

BLF183XRS

NXP Semiconductors

BF994S-TAPE-7

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

BF996S

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

2

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.03 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

e3

30

260

BF510TRL13

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G3

Not Qualified

e3

BF998TRL

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

e3

BF998R-TAPE-7

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

CLF1G0035S-50,112

NXP Semiconductors

N-CHANNEL

FET RF Small Signal

250 Cel

CLF1G0060S-30U

NXP Semiconductors

N-CHANNEL

FET RF Small Signals

250 Cel

BF996S-TAPE-7

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

BF991-TAPE-13

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.02 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

BF545C,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

BF992TRL

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.04 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

e3

BF990ATRL

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

18 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

BF990AT/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

18 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

RF Small Signal Field Effect Transistors (FET)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.