Onsemi RF Small Signal Field Effect Transistors (FET) 152

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Manufacturers (1)
    • Onsemi
    • Agilent Technologies
    • Broadcom
    • California Eastern Laboratories
    • Central Semiconductor
    • Defense Logistics Agency
    • Diodes Incorporated
    • Fujitsu
    • Hewlett Packard
    • Infineon Technologies
    • Littelfuse
    • Microchip Technology
    • Mini-circuits
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • National Semiconductor
    • Nte Electronics
    • Qorvo
    • Renesas Electronics
    • Rf Micro Devices
    • STMicroelectronics
    • Samsung
    • Sanyo Electric
    • Sumitomo Electric Industries
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Vishay Intertechnology
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration
    • COMMON SOURCE, 2 ELEMENTS
    • COMPLEX
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN DIODE AND RESISTOR
    • SINGLE WITH BUILT-IN DIODE RESISTOR AND CAPACITOR
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount
    • NO
    • YES
Maximum Power Dissipation (Abs)
    • .1 W
    • .125 W
    • .15 W
    • .16 W
    • .165 W
    • .175 W
    • .18 W
    • .2 W
    • .225 W
    • .25 W
    • .28 W
    • .3 W
    • .31 W
    • .33 W
    • .35 W
    • .36 W
    • .4 W
    • .5 W
    • .7 W
    • 10 W
    • 15 W
    • 250 W
    • 3 W
    • 35 W
    • 4.75 W
    • 5.7 W
    • 6 W
    • 7.4 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 104 V
    • 105 V
    • 11 V
    • 115 V
    • 12 V
    • 12.5 V
    • 13 V
    • 13.5 V
    • 135 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 18 V
    • 20 V
    • 25 V
    • 27 V
    • 3 V
    • 3.5 V
    • 30 V
    • 35 V
    • 4 V
    • 4.5 V
    • 40 V
    • 5 V
    • 5.5 V
    • 50 V
    • 6 V
    • 6.5 V
    • 65 V
    • 7 V
    • 7.5 V
    • 8 V
    • 9 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 11 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 13 dB
    • 13.5 dB
    • 14 dB
    • 14.5 dB
    • 14.9 dB
    • 15 dB
    • 15.3 dB
    • 15.5 dB
    • 16 dB
    • 16.5 dB
    • 17 dB
    • 17.5 dB
    • 18 dB
    • 18.5 dB
    • 19 dB
    • 2.5 dB
    • 20 dB
    • 21 dB
    • 22 dB
    • 22.8 dB
    • 23 dB
    • 23.2 dB
    • 23.5 dB
    • 24 dB
    • 25 dB
    • 27 dB
    • 28 dB
    • 29 dB
    • 5.5 dB
    • 5.8 dB
    • 6 dB
    • 6.5 dB
    • 6.7 dB
    • 7 dB
    • 7.5 dB
    • 8 dB
    • 8.5 dB
    • 8.7 dB
    • 9 dB
    • 9.4 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • DUAL GATE, ENHANCEMENT MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
Highest Frequency Band
    • C BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Drain Current (Abs) (ID)
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .021 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .384 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 10 A
    • 2 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
No. of Terminals
    • 10
    • 11
    • 12
    • 13
    • 15
    • 2
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET General Purpose Small Signals
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • .05 W
    • .1 W
    • .12 W
    • .125 W
    • .13 W
    • .15 W
    • .16 W
    • .165 W
    • .18 W
    • .2 W
    • .22 W
    • .225 W
    • .24 W
    • .25 W
    • .27 W
    • .29 W
    • .3 W
    • .31 W
    • .35 W
    • .355 W
    • .357 W
    • .36 W
    • .4 W
    • .5 W
    • .58 W
    • .6 W
    • .7 W
    • .72 W
    • .725 W
    • .8 W
    • .9 W
    • 1 W
    • 1.5 W
    • 10 W
    • 2.25 W
    • 2.5 W
    • 3 W
    • 3.3 W
    • 3.38 W
    • 3.5 W
    • 3.75 W
    • 5 W
    • 5.4 W
    • 6.25 W
    • 6.75 W
    • 7.4 W
    • 7.5 W
    • 70 W
    • 8.1 W
    • 8.75 W
    • 9 W
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 160 Cel
    • 165 Cel
    • 175 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
Transistor Element Material
    • Al/In GALLIUM ARSENIDE
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Lead (Sn80Pb20)
    • Tin/Silver/Copper (Sn/Ag/Cu)
Maximum Drain Current (ID)
    • .002 A
    • .005 A
    • .006 A
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .8 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.12 A
    • 1.2 A
    • 1.25 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 2 A
    • 2.1 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • DIE-8
    • O-CRDB-F4
    • O-MBCY-W3
    • O-MBCY-W4
    • O-PBCY-T3
    • O-PBCY-W3
    • O-PRDB-F4
    • O-XQMW-F4
    • O-XRDB-F4
    • O-XRDB-G4
    • R-CBCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFP-F2
    • R-CDFP-F4
    • R-CDSO-G8
    • R-CDSO-N3
    • R-CQMW-F4
    • R-CQSO-G4
    • R-MDSO-N4
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-F2
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-N10
    • R-PQFP-F4
    • R-PQMW-F4
    • R-PQSO-G4
    • R-PSFM-G4
    • R-PSFM-G5
    • R-PSFM-P4
    • R-PSFM-T4
    • R-PSIP-T3
    • R-PSIP-W3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-PSSO-G2
    • R-PXMW-F4
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDCC-N8
    • R-XDFM-F2
    • R-XQMW-F4
    • R-XRDB-F4
    • R-XUUC-N
    • R-XUUC-N10
    • R-XUUC-N11
    • R-XUUC-N12
    • R-XUUC-N13
    • R-XUUC-N15
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFP-F2
    • S-CQMW-F4
    • S-PDSO-N10
    • S-PDSO-N8
    • S-PQMW-F4
    • S-PQSO-G4
    • S-XUUC-N2
    • S-XUUC-N4
    • X-CQMW-F4
    • X-CXDB-F4
    • X-CXMW-F4
    • X-PXMW-G4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • GATE
    • ISOLATED
    • SOURCE
    • SOURCE AND SUBSTRATE
    • SUBSTRATE
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • CASCODE J-FET
    • CASCODE MOS
    • EUROPEAN PART NUMBER
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, LOW NOISE
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-106
    • TO-18
    • TO-206AF
    • TO-226
    • TO-226AA
    • TO-236
    • TO-236AB
    • TO-251
    • TO-252
    • TO-39
    • TO-72
    • TO-92
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 230
    • 235
    • 240
    • 250
    • 260
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .02 pF
    • .025 pF
    • .027 pF
    • .03 pF
    • .035 pF
    • .04 pF
    • .045 pF
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .15 pF
    • .25 pF
    • .35 pF
    • .4 pF
    • .5 pF
    • .6 pF
    • .65 pF
    • .7 pF
    • .8 pF
    • .9 pF
    • 1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.5 pF
    • 1.7 pF
    • 2 pF
    • 2.5 pF
    • 3 pF
    • 35 pF
    • 4 pF
    • 4.5 pF
    • 45 pF
    • 60 pF
Reference Standard
    • AEC-Q101
    • ESA-SCC-5613/002
    • ESA-SCC-5613/008
    • ESA/SCC 5613/002
    • ESA/SCC 5613/004
    • ESA/SCC 5614/006
    • IEC-134
    • IEC-60134
    • MIL-19500/375G
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BF256ARLRM

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

BF244BRL1

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

MMBFU310LT1

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

30

235

2.5 pF

2N5486RLRM

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

10 dB

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

.03 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

1 pF

3SK167-5

Onsemi

N-CHANNEL

.055 A

FET RF Small Signal

METAL SEMICONDUCTOR

.2 W

125 Cel

.055 A

2N5486RLRE

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

10 dB

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

.03 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

1 pF

3SK168D

Onsemi

N-CHANNEL

FET RF Small Signal

METAL SEMICONDUCTOR

.25 W

125 Cel

Tin/Lead (Sn/Pb)

e0

BF245RLRE

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

MPF102RL1

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

125 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

3 pF

BF244ARLRE

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

MMBFJ309LT1

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

30

235

2.5 pF

BF245ARL1

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

BF244ARL1

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

3SK265

Onsemi

N-CHANNEL

.03 A

FET RF Small Signal

METAL SEMICONDUCTOR

.2 W

.03 A

3SK167

Onsemi

N-CHANNEL

.055 A

FET RF Small Signal

METAL SEMICONDUCTOR

.2 W

125 Cel

.055 A

3SK264

Onsemi

N-CHANNEL

.03 A

FET RF Small Signal

METAL SEMICONDUCTOR

.2 W

.03 A

3SK167-3

Onsemi

N-CHANNEL

.055 A

FET RF Small Signal

METAL SEMICONDUCTOR

.2 W

125 Cel

.055 A

MPF102RLRA

Onsemi

N-CHANNEL

SINGLE

NO

.2 W

PLASTIC/EPOXY

AMPLIFIER

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn80Pb20)

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

3 pF

SGF16

Onsemi

N-CHANNEL

.06 A

FET RF Small Signal

.13 W

.06 A

2N5484RLRE

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

16 dB

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

.03 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

1 pF

BF245BRLRA

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

2N5486RL

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

10 dB

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

.03 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

1 pF

BF256AG

Onsemi

Tin/Silver/Copper (Sn/Ag/Cu)

e1

3SK168B

Onsemi

N-CHANNEL

.055 A

FET RF Small Signal

METAL SEMICONDUCTOR

.25 W

125 Cel

.055 A

BF256ARLRP

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

BF245CRLRM

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

2N5485

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

AMPLIFIER

10 dB

WIRE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN LEAD

.03 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

e0

1 pF

MMBFU310LT3

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e0

2.5 pF

BF245CRLRP

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

BF245CRL1

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

BF244AZL1

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

BF245BRLRP

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

2N5484

Onsemi

N-CHANNEL

SINGLE

NO

.35 W

PLASTIC/EPOXY

AMPLIFIER

16 dB

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

.03 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

1 pF

MPF102RLRE

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

125 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

3 pF

2N5484ZL1

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

16 dB

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

.03 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

1 pF

2N5486ZL1

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

10 dB

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

.03 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

1 pF

MPF102

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

JUNCTION

SILICON

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

NOT SPECIFIED

235

3 pF

BF244BRLRM

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

BF244ARL

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

SGF17

Onsemi

N-CHANNEL

.06 A

FET RF Small Signal

.13 W

.06 A

2N5484RL1

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

16 dB

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

.03 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

1 pF

2N5484RLRM

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

16 dB

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

.03 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

1 pF

BF245BRLRM

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

2SK1241

Onsemi

N-CHANNEL

.06 A

FET RF Small Signal

.18 W

150 Cel

.06 A

2N5486RLRA

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

10 dB

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

.03 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

1 pF

BF256ARLRA

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

SGF21

Onsemi

N-CHANNEL

.06 A

FET RF Small Signal

.13 W

.06 A

BF245CRL

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

RF Small Signal Field Effect Transistors (FET)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.