.075 A Small Signal Bipolar Junction Transistors (BJT) 25

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BC201GREEN

Infineon Technologies

PNP

SINGLE

NO

80 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.18 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

240

150 Cel

5.4 pF

SILICON

5 V

SINGLE

R-PSIP-T3

BC203GREEN

Infineon Technologies

PNP

SINGLE

NO

80 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.18 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

240

150 Cel

3.5 pF

SILICON

30 V

SINGLE

R-PSIP-T3

BC121

Infineon Technologies

NPN

SINGLE

NO

250 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.4 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

150 Cel

11 pF

SILICON

5 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSIP-T3

e0

BC122YELLOW

Infineon Technologies

NPN

SINGLE

NO

250 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.4 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

150 Cel

7 pF

SILICON

20 V

SINGLE

R-PSIP-T3

BC202YELLOW

Infineon Technologies

PNP

SINGLE

NO

80 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.18 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

125

150 Cel

3.5 pF

SILICON

20 V

SINGLE

R-PSIP-T3

BC203WHITE

Infineon Technologies

PNP

SINGLE

NO

80 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.18 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

75

150 Cel

3.5 pF

SILICON

30 V

SINGLE

R-PSIP-T3

BC203YELLOW

Infineon Technologies

PNP

SINGLE

NO

80 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.18 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

125

150 Cel

3.5 pF

SILICON

30 V

SINGLE

R-PSIP-T3

BC201BLUE

Infineon Technologies

PNP

SINGLE

NO

80 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.18 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

450

150 Cel

5.4 pF

SILICON

5 V

SINGLE

R-PSIP-T3

BC122WHITE

Infineon Technologies

NPN

SINGLE

NO

250 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.4 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

150 Cel

7 pF

SILICON

20 V

SINGLE

R-PSIP-T3

BC202WHITE

Infineon Technologies

PNP

SINGLE

NO

80 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.18 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

75

150 Cel

3.5 pF

SILICON

20 V

SINGLE

R-PSIP-T3

BC123GREEN

Infineon Technologies

NPN

SINGLE

NO

250 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.4 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

150 Cel

7 pF

SILICON

30 V

SINGLE

R-PSIP-T3

BC123YELLOW

Infineon Technologies

NPN

SINGLE

NO

250 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.4 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

150 Cel

7 pF

SILICON

30 V

SINGLE

R-PSIP-T3

BC121YELLOW

Infineon Technologies

NPN

SINGLE

NO

250 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.4 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

150 Cel

11 pF

SILICON

5 V

SINGLE

R-PSIP-T3

BC122GREEN

Infineon Technologies

NPN

SINGLE

NO

250 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.4 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

150 Cel

7 pF

SILICON

20 V

SINGLE

R-PSIP-T3

BC121BLUE

Infineon Technologies

NPN

SINGLE

NO

250 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.4 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

150 Cel

11 pF

SILICON

5 V

SINGLE

R-PSIP-T3

BC123

Infineon Technologies

NPN

SINGLE

NO

250 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.4 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

150 Cel

7 pF

SILICON

30 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSIP-T3

e0

BC201WHITE

Infineon Technologies

PNP

SINGLE

NO

80 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.18 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

75

150 Cel

5.4 pF

SILICON

5 V

SINGLE

R-PSIP-T3

BC202BLUE

Infineon Technologies

PNP

SINGLE

NO

80 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.18 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

450

150 Cel

3.5 pF

SILICON

20 V

SINGLE

R-PSIP-T3

BC122BLUE

Infineon Technologies

NPN

SINGLE

NO

250 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.4 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

150 Cel

7 pF

SILICON

20 V

SINGLE

R-PSIP-T3

BC201YELLOW

Infineon Technologies

PNP

SINGLE

NO

80 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.18 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

125

150 Cel

5.4 pF

SILICON

5 V

SINGLE

R-PSIP-T3

BC121GREEN

Infineon Technologies

NPN

SINGLE

NO

250 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.4 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

150 Cel

11 pF

SILICON

5 V

SINGLE

R-PSIP-T3

BC202GREEN

Infineon Technologies

PNP

SINGLE

NO

80 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.18 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

240

150 Cel

3.5 pF

SILICON

20 V

SINGLE

R-PSIP-T3

BC123WHITE

Infineon Technologies

NPN

SINGLE

NO

250 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.4 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

150 Cel

7 pF

SILICON

30 V

SINGLE

R-PSIP-T3

BC122

Infineon Technologies

NPN

SINGLE

NO

250 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.4 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

150 Cel

7 pF

SILICON

20 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSIP-T3

e0

BC121WHITE

Infineon Technologies

NPN

SINGLE

NO

250 MHz

.25 W

.075 A

PLASTIC/EPOXY

AMPLIFIER

.4 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

150 Cel

11 pF

SILICON

5 V

SINGLE

R-PSIP-T3

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395