.1 A Small Signal Bipolar Junction Transistors (BJT) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

DTC114YM3T5G

Onsemi

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.6 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-F3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.21

e3

40

260

DTC114YU3HZGT106

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

68

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTOR RATIO IS 4.7

e3

AEC-Q101

DTC115EUAT106

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

82

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

e1

10

260

DTC123EMT2L

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

20

150 Cel

SILICON

50 V

DUAL

R-PDSO-F3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

10

260

DTC123JCAT116

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

1

Not Qualified

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 21.36

10

260

DTC123YKAT146

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

33

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.5

e1

10

260

DTC124EEBTL

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

56

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-F3

1

Not Qualified

BUILT IN BIAS RESISTANCE RATIO IS 1

e1

10

260

DTC124EK

TDK

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

56

SILICON

Tin/Lead (Sn/Pb)

e0

DTC124ES

ROHM

NPN

NO

.3 W

.1 A

1

BIP General Purpose Small Signal

56

SILICON

DTC124TMT2L

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-F3

1

Not Qualified

BUILT-IN BIAS RESISTOR

e2

10

260

DTC124XKAT146

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

68

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 2.1

e1

10

260

DTC143EE3HZGTL

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

1

BUILT-IN BIAS RESISTOR RATIO IS 1

10

260

AEC-Q101

DTC143EEBTL

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

.15 W

30

150 Cel

SILICON

50 V

Tin/Silver/Copper (Sn/Ag/Cu)

DUAL

R-PDSO-F3

1

Not Qualified

BUILT IN BIAS RESISTANCE RATIO IS 1

e1

10

260

DTC143EU3HZGT106

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

AEC-Q101

DTC143EU3T106

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

DTC143EUAFRAT106

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

.2 W

30

SILICON

50 V

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

10

260

AEC-Q101

DTC143TU3HZGT106

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTANCE

e3

AEC-Q101

DTC143TU3T106

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTANCE

e3

DTC144ECAHZGT116

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

68

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1.0

e3

10

260

AEC-Q101

DTC144EUAFRAT106

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

68

SILICON

50 V

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1.0

10

260

AEC-Q101

EMB10T2R

ROHM

PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-F6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 21.36

e2

10

260

EMD12FHAT2R

ROHM

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

68

SILICON

50 V

DUAL

R-PDSO-F6

1

BUILT IN BIAS RESISTANCE RATIO IS 1.0

10

260

AEC-Q101

EMD53T2R

ROHM

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

35

SILICON

50 V

DUAL

R-PDSO-F6

1

10

260

EMG5T2R

ROHM

NPN

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

5

SMALL OUTLINE

BIP General Purpose Small Signal

68

150 Cel

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-F5

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.7

e2

10

260

EMH4T2R

ROHM

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

5

SMALL OUTLINE

BIP General Purpose Small Signals

100

150 Cel

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-F5

1

Not Qualified

e2

10

260

EMZ52T2R

ROHM

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

350 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

120

SILICON

50 V

DUAL

R-PDSO-F6

1

10

260

FMG11AT148

ROHM

NPN

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

2

5

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

Tin/Silver/Copper (Sn/Ag/Cu)

DUAL

R-PDSO-G5

1

Not Qualified

BUILT IN BIAS RESISTANCE RATIO IS 21

e1

10

260

FMG8AT148

ROHM

NPN

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

2

5

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G5

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 10

e1

10

260

MTS102

Motorola

NPN

SINGLE

NO

.1 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

RN1002

Toshiba

NPN

SINGLE WITH BUILT-IN RESISTOR

NO

250 MHz

.4 W

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

BIP General Purpose Small Signal

50

150 Cel

SILICON

50 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

TO-92

e0

RN1301(TE85L,F)

Toshiba

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

200 MHz

.1 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

30

SILICON

50 V

DUAL

R-PDSO-G3

BUILT IN BAIS RESISTOR RATIO IS 1

30

260

RN1306(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

80

SILICON

RN1401

Toshiba

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.4 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

30

150 Cel

6 pF

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

TO-236AB

e0

RN1402(TE85L,F)

Toshiba

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

50

SILICON

RN1501(TE85L,F)

Toshiba

NPN

YES

.3 W

.1 A

2

BIP General Purpose Small Signal

30

SILICON

RN1608(TE85L,F)

Toshiba

NPN

YES

.3 W

.1 A

2

BIP General Purpose Small Signals

80

SILICON

RN1907(TE85L,F)

Toshiba

NPN

YES

.2 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN2105F

Toshiba

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

200 MHz

.1 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

80

SILICON

50 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-F3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 21.36

e0

RN2110

Toshiba

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

200 MHz

.1 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

120

150 Cel

6 pF

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR

NOT SPECIFIED

NOT SPECIFIED

RN2401S,LF(D

Toshiba

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

200 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTANCE RATIO IS 1

RN4607(TE85L,F)

Toshiba

NPN AND PNP

YES

.3 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN4902(TE85L,F)

Toshiba

NPN AND PNP

YES

.2 W

.1 A

2

BIP General Purpose Small Signal

50

SILICON

RN4983,LF(CT

Toshiba

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

.2 W

70

150 Cel

6 pF

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISITOR RATIO IS 1

UMB11NFHATN

ROHM

PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

50 V

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTANCE RATIO IS 1

10

260

AEC-Q101

UMD22NFHATR

ROHM

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

80

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-G6

BUILT IN BIAS RESISTANCE RATIO IS 10

e2

10

260

AEC-Q101

UMD5NTR

ROHM

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

68

150 Cel

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e2

10

260

UMD9NFHATR

ROHM

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

68

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-G6

BUILT IN BIAS RESISTANCE RATIO IS 4.7

e2

10

260

AEC-Q101

UMF28NTR

ROHM

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

68

150 Cel

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 2.13

e2

10

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395