.2 A Small Signal Bipolar Junction Transistors (BJT) 2,050

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
SMBT3906DW1T1G	Onsemi	PNP		YES	250 MHz	.15 W	.2 A									Other Transistors		100	150 Cel							MATTE TIN			1					e3	30	260
SMBT3906E6327HTSA1	Infineon Technologies	PNP	SINGLE	YES	250 MHz		.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			80	150 Cel		SILICON	40 V	70 ns		300 ns	TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
DMMT3904W-7-F	Diodes Incorporated	NPN	SEPARATE, 2 ELEMENTS	YES	300 MHz	.2 W	.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		250 ns	MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
S-LMBT3904LT1G	Leshan Radio	NPN	SINGLE	YES	300 MHz		.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30			SILICON	40 V	70 ns		250 ns		DUAL	R-PDSO-G3							NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
JANTXV2N2369A	Microchip Technology	NPN	SINGLE	NO	500 MHz	.36 W	.2 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		20	200 Cel		SILICON	15 V	12 ns		18 ns	TIN LEAD	BOTTOM	O-MBCY-W3		COLLECTOR	Qualified		TO-18	e0			MIL-19500/317K
MMDT5401-7-F	Diodes Incorporated	PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.2 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		50	150 Cel		SILICON	150 V				MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
MBT3906DW1T1G	Onsemi	PNP	SEPARATE, 2 ELEMENTS	YES	250 MHz	.15 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		300 ns	MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
MMDT3906-7-F	Diodes Incorporated	PNP	SEPARATE, 2 ELEMENTS	YES	250 MHz	.2 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		300 ns	MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
PMBT3906,235	NXP Semiconductors	PNP	SINGLE	YES	250 MHz	.25 W	.2 A	PLASTIC/EPOXY	SWITCHING	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel	4.5 pF	SILICON	40 V	65 ns		300 ns	TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
2N2369ACSM	Tt Electronics Plc	NPN	SINGLE	YES	500 MHz		.2 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		NO LEAD	RECTANGULAR	1	3	SMALL OUTLINE			30	200 Cel		SILICON	15 V	12 ns		18 ns		DUAL	R-CDSO-N3			Not Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED
MMDT3904VC-7	Diodes Incorporated	NPN	SEPARATE, 2 ELEMENTS	YES	300 MHz	.2 W	.2 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		250 ns	MATTE TIN	DUAL	R-PDSO-F6	1		Not Qualified			e3	30	260
LMBT3946DW1T1G	Leshan Radio	NPN AND PNP		YES	250 MHz	.15 W	.2 A									BIP General Purpose Small Signal		100	150 Cel
JANTX2N2369A	Microchip Technology	NPN	SINGLE	NO	500 MHz	.36 W	.2 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		20	200 Cel		SILICON	15 V	12 ns		18 ns	TIN LEAD	BOTTOM	O-MBCY-W3		COLLECTOR	Qualified		TO-18	e0			MIL-19500/317K
JAN2N2369A	Microchip Technology	NPN	SINGLE	NO	500 MHz	.36 W	.2 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		20	200 Cel		SILICON	15 V	12 ns		18 ns	TIN LEAD	BOTTOM	O-MBCY-W3		COLLECTOR	Qualified		TO-18	e0			MIL-19500/317K
MMBT3906K	Fairchild Semiconductor	PNP	SINGLE	YES	250 MHz	.35 W	.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns	-55 Cel	300 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBT3906LP-7	Diodes Incorporated	PNP	SINGLE	YES	300 MHz	1 W	.2 A	PLASTIC/EPOXY		.4 V	NO LEAD	RECTANGULAR	1	3	CHIP CARRIER		1 W	30	150 Cel	4.5 pF	SILICON	40 V	70 ns	-55 Cel	300 ns	Nickel/Palladium/Gold (Ni/Pd/Au)	BOTTOM	R-PBCC-N3	1	COLLECTOR	Not Qualified	HIGH RELIABILITY		e4	30	260	AEC-Q101
DMMT3906W-7-F	Diodes Incorporated	PNP	SEPARATE, 2 ELEMENTS	YES	250 MHz	.2 W	.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		300 ns	MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified	HIGH RELIABILITY		e3	30	260
KST3906MTF	Onsemi	PNP	SINGLE	YES	250 MHz	.35 W	.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30			SILICON	40 V	70 ns		300 ns	TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
SST3904T116	ROHM	NPN	SINGLE	YES	300 MHz	.35 W	.2 A	PLASTIC/EPOXY	SWITCHING	.3 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel	4 pF	SILICON	40 V	70 ns		250 ns	TIN SILVER COPPER	DUAL	R-PDSO-G3	1		Not Qualified			e1	10	260
MMBT2369ALT1	Onsemi	NPN	SINGLE	YES	500 MHz	.225 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		20	150 Cel		SILICON	15 V	12 ns	-55 Cel	18 ns	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235
MMBT3904-HF	Comchip Technology	NPN	SINGLE	YES	300 MHz	.2 W	.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		60	150 Cel		SILICON	40 V	70 ns		250 ns	Tin (Sn)	DUAL	R-PDSO-G3						e3	10	260
FMMT597TA	Diodes Incorporated	PNP	SINGLE	YES	75 MHz	.5 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
PZT3904	Onsemi	NPN	SINGLE	YES	300 MHz	1.5 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		250 ns	TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
BC108BPBFREE	Central Semiconductor	NPN	SINGLE	NO	150 MHz		.2 A	METAL	AMPLIFIER		WIRE	ROUND	1	3	CYLINDRICAL			200			SILICON	25 V					BOTTOM	O-MBCY-W3					TO-18		NOT SPECIFIED	NOT SPECIFIED
PMBT3906M,315	NXP Semiconductors	PNP	SINGLE	YES	250 MHz	.59 W	.2 A						1			Other Transistors		100	150 Cel							TIN			1					e3	30	260
PZTA42-TP	Micro Commercial Components						.2 A											25				300 V				MATTE TIN			1					e3	10	260
PMBT3904YS	NXP Semiconductors	NPN	SEPARATE, 2 ELEMENTS	YES	300 MHz		.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE			30	150 Cel		SILICON	40 V	70 ns		250 ns	PURE TIN	DUAL	R-PDSO-G6	1		Not Qualified
2N4125	Texas Instruments	PNP	SINGLE	NO	200 MHz	.35 W	.2 A	PLASTIC/EPOXY	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		25	150 Cel		SILICON	30 V	26 ns		82 ns		BOTTOM	O-PBCY-W3			Not Qualified		TO-92		NOT SPECIFIED	NOT SPECIFIED
FCX558TA	Diodes Incorporated	PNP	SINGLE	YES	50 MHz	1 W	.2 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	400 V				MATTE TIN	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified			e3	30	260
BCX70JT116	ROHM	NPN	SINGLE	YES	125 MHz	.2 W	.2 A	PLASTIC/EPOXY	AMPLIFIER	.3 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		250	150 Cel	4.5 pF	SILICON	45 V				TIN SILVER COPPER	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE		e1	10	260
MMBT2369LT1G	Onsemi	NPN	SINGLE	YES	500 MHz	.225 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		20	150 Cel		SILICON	15 V	12 ns	-55 Cel	18 ns	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260
MMBT3904_NL	Fairchild Semiconductor	NPN	SINGLE	YES	300 MHz	.35 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns	-55 Cel	250 ns	MATTE TIN	DUAL	R-PDSO-G3	1	COLLECTOR	Not Qualified			e3	40	260
MMBT3906RFG	Taiwan Semiconductor	PNP	SINGLE	YES	250 MHz		.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30	150 Cel		SILICON	40 V	70 ns	-55 Cel	300 ns	MATTE TIN OVER NICKEL	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
SMBT3904SH6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	300 MHz		.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	6	SMALL OUTLINE			30			SILICON	40 V	70 ns		250 ns	TIN	DUAL	R-PDSO-G6	1					e3
FMMTA42TA	Diodes Incorporated	NPN	SINGLE	YES	50 MHz	.33 W	.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBT3904FA-7B	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	.435 W	.2 A	PLASTIC/EPOXY			NO LEAD	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		250 ns	NICKEL PALLADIUM GOLD	SINGLE	R-PSSO-N2	1	COLLECTOR		HIGH RELIABILITY		e4	30	260	AEC-Q101
MMST3906-7-F	Diodes Incorporated	PNP	SINGLE	YES	300 MHz	.2 W	.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		300 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
PMBT3904VS	NXP Semiconductors	NPN	SEPARATE, 2 ELEMENTS	YES	300 MHz		.2 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	2	6	SMALL OUTLINE			30	150 Cel		SILICON	40 V	70 ns		250 ns	PURE TIN	DUAL	R-PDSO-F6	1		Not Qualified
MMBT3906TT1	Onsemi	PNP	SINGLE	YES	250 MHz	.15 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns	-55 Cel	300 ns	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified			e0	30	235
2N3904RL	Onsemi	NPN	SINGLE	NO	300 MHz		.2 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL			30	150 Cel		SILICON	40 V	70 ns		250 ns	TIN LEAD	BOTTOM	O-PBCY-T3			Not Qualified	EUROPEAN PART NUMBER	TO-92	e0
BCW60B,215	NXP Semiconductors	NPN	SINGLE	YES	250 MHz	.3 W	.2 A	PLASTIC/EPOXY	SWITCHING	.55 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		70	150 Cel		SILICON	32 V	150 ns		800 ns	TIN	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE		e3	30	260
MMBT3906-TP-HF	Micro Commercial Components	PNP	SINGLE	YES	250 MHz	.3 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns	-55 Cel	305 ns	MATTE TIN	DUAL	R-PDSO-G3	1					e3	10	260
PMST3904,115	NXP Semiconductors	NPN	SINGLE	YES	300 MHz	.2 W	.2 A	PLASTIC/EPOXY	SWITCHING	.3 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel	4 pF	SILICON	40 V	65 ns		240 ns	TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BCX70JLT1	Onsemi	NPN	SINGLE	YES	125 MHz	.225 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		90	150 Cel		SILICON	45 V	150 ns		800 ns		DUAL	R-PDSO-G3			Not Qualified		TO-236
MMBT3906FA-7B	Diodes Incorporated	PNP	SINGLE	YES	300 MHz	.435 W	.2 A	PLASTIC/EPOXY			NO LEAD	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns	-55 Cel	300 ns	NICKEL PALLADIUM GOLD	SINGLE	R-PSSO-N3	1	COLLECTOR		HIGH RELIABILITY		e4	30	260	AEC-Q101
BC107A	Texas Instruments	NPN	SINGLE	NO	50 MHz	.6 W	.2 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		50	175 Cel		SILICON	65 V					BOTTOM	O-MBCY-W3			Not Qualified		TO-18		NOT SPECIFIED	NOT SPECIFIED
MMBT3906Q-7-F	Diodes Incorporated	PNP	SINGLE	YES	250 MHz	.35 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns	-55 Cel	300 ns	MATTE TIN	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3	30	260	AEC-Q101
NST3906DXV6T1G	Onsemi	PNP	SEPARATE, 2 ELEMENTS	YES	250 MHz	.5 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		300 ns	MATTE TIN	DUAL	R-PDSO-F6	1		Not Qualified			e3	30	260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395