.3 A Small Signal Bipolar Junction Transistors (BJT) 833

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

KST14TR

Samsung

NPN

DARLINGTON

YES

.3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

10000

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

KSD227-G

Samsung

NPN

SINGLE

NO

.3 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

200

SILICON

25 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

KSA1378-G

Samsung

PNP

SINGLE

NO

.3 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

200

SILICON

25 V

SINGLE

R-PSIP-T3

Not Qualified

KSA1378-Y

Samsung

PNP

SINGLE

NO

.3 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

120

SILICON

25 V

SINGLE

R-PSIP-T3

Not Qualified

KSC3488

Samsung

NPN

SINGLE

NO

.3 W

.3 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

70

150 Cel

SILICON

25 V

BOTTOM

O-PBCY-W3

Not Qualified

KST12TR

Samsung

NPN

SINGLE

YES

.3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

10000

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

KSA954-O

Samsung

PNP

SINGLE

NO

100 MHz

.3 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

90

SILICON

80 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

KSP94

Samsung

PNP

SINGLE

NO

.625 W

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

400 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

KST14TF

Samsung

NPN

DARLINGTON

YES

.3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

10000

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

KST14TI

Samsung

NPN

DARLINGTON

YES

.3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

10000

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

KSC3488-O

Samsung

NPN

SINGLE

NO

.3 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

70

SILICON

25 V

SINGLE

R-PSIP-T3

Not Qualified

KST13TI

Samsung

NPN

DARLINGTON

YES

125 MHz

.3 A

PLASTIC/EPOXY

1.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

10000

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

KSC3488-Y

Samsung

NPN

SINGLE

NO

.3 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

120

SILICON

25 V

SINGLE

R-PSIP-T3

Not Qualified

KSA642-O

Samsung

PNP

SINGLE

NO

.3 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

70

SILICON

25 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

KSD227-Y

Samsung

NPN

SINGLE

NO

.3 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

120

SILICON

25 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

KST63TR

Samsung

PNP

DARLINGTON

YES

.3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

10000

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

KSP45

Samsung

NPN

SINGLE

NO

.3 A

PLASTIC/EPOXY

.75 V

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

1.5 W

40

150 Cel

7 pF

SILICON

350 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395