.5 A Small Signal Bipolar Junction Transistors (BJT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BC808W-T

NXP Semiconductors

PNP

SINGLE

YES

80 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

10 pF

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

BCX17-25R-TAPE-13

NXP Semiconductors

PNP

SINGLE

YES

80 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.62 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

2PD602AQL,215

NXP Semiconductors

NPN

SINGLE

YES

140 MHz

.25 W

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

85

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

BCX19-25-TAPE-7

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.62 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

BC808-16W

NXP Semiconductors

PNP

SINGLE

YES

80 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

10 pF

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

BC817W/T3

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

5 pF

SILICON

45 V

TIN

DUAL

R-PDSO-G3

Not Qualified

e3

BC807R-25-TAPE-13

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

BC817-40W-TAPE-7

NXP Semiconductors

NPN

SINGLE

YES

200 MHz

.5 A

PLASTIC/EPOXY

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

5 pF

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

BC808-16TRL

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

PMBTA93TRL

NXP Semiconductors

PNP

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

SILICON

200 V

DUAL

R-PDSO-G3

Not Qualified

BC818-40/T3

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

250

150 Cel

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

PMBTA92TRL

NXP Semiconductors

PNP

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

SILICON

300 V

TIN

DUAL

R-PDSO-G3

Not Qualified

e3

BC817-25W-TAPE-7

NXP Semiconductors

NPN

SINGLE

YES

200 MHz

.5 A

PLASTIC/EPOXY

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

5 pF

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

BC818-40WT/R

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

5 pF

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

PMBTA92-TAPE-7

NXP Semiconductors

PNP

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

150 Cel

6 pF

SILICON

300 V

DUAL

R-PDSO-G3

Not Qualified

BC818-T

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

BC808R-40

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

BCX18T/R

NXP Semiconductors

PNP

SINGLE

YES

80 MHz

.3 W

.5 A

PLASTIC/EPOXY

SWITCHING

.62 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

25 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e3

260

2PD602AS/T4

NXP Semiconductors

NPN

SINGLE

YES

180 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

170

150 Cel

15 pF

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

TO-236

BC338AMO

NXP Semiconductors

NPN

SINGLE

NO

100 MHz

.625 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

.7 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

25 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

PMBT2369TRL13

NXP Semiconductors

NPN

SINGLE

YES

.5 A

PLASTIC/EPOXY

SWITCHING

.25 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

15 V

12 ns

18 ns

TIN

DUAL

R-PDSO-G3

Not Qualified

e3

2PD602AQL

NXP Semiconductors

NPN

SINGLE

YES

140 MHz

.25 W

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

85

150 Cel

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

BC337-16-T/R

NXP Semiconductors

NPN

SINGLE

NO

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

WIRE

ROUND

1

3

CYLINDRICAL

100

150 Cel

SILICON

45 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

PMBTA93TRL13

NXP Semiconductors

PNP

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

SILICON

200 V

DUAL

R-PDSO-G3

Not Qualified

BC807-40T/R

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

.35 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

250

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e3

260

BC337-25,116

NXP Semiconductors

NPN

SINGLE

NO

100 MHz

.625 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

160

150 Cel

SILICON

45 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

BC817-16W/T3

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

5 pF

SILICON

45 V

TIN

DUAL

R-PDSO-G3

Not Qualified

e3

BC817,235

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.3 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

BC807-40-TAPE-13

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

BC808-16WT/R

NXP Semiconductors

PNP

SINGLE

YES

80 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

10 pF

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

PMBTA05

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

.25 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

150 Cel

SILICON

60 V

DUAL

R-PDSO-G3

Not Qualified

BC337-40,412

NXP Semiconductors

NPN

SINGLE

NO

100 MHz

.625 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

250

150 Cel

SILICON

45 V

Matte Tin (Sn)

BOTTOM

O-PBCY-W3

1

Not Qualified

TO-92

e3

40

250

2PB710AQ-TAPE-13

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

15 pF

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BC818-40-TAPE-7

NXP Semiconductors

NPN

SINGLE

YES

200 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

PBSS2515E

NXP Semiconductors

NPN

SINGLE

YES

420 MHz

.25 W

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

15 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

PMBTA43TRL13

NXP Semiconductors

NPN

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

200 V

DUAL

R-PDSO-G3

Not Qualified

2PD602S-TAPE-7

NXP Semiconductors

NPN

SINGLE

YES

180 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

15 pF

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

PMBTA55T/R

NXP Semiconductors

PNP

SINGLE

YES

50 MHz

.25 W

.5 A

PLASTIC/EPOXY

SWITCHING

.25 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

60 V

DUAL

R-PDSO-G3

Not Qualified

BC807-16/T3

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e3

PMBTA92TRL13

NXP Semiconductors

PNP

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

SILICON

300 V

TIN

DUAL

R-PDSO-G3

Not Qualified

e3

BC807R-25-TAPE-7

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

BC817-TAPE-13

NXP Semiconductors

NPN

SINGLE

YES

200 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

BC818-25

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

160

150 Cel

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

PDTA323TK

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.25 W

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

100

SILICON

15 V

Tin (Sn)

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR

TO-236

e3

BCX17-T

NXP Semiconductors

PNP

SINGLE

YES

80 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.62 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

PMBTA92-TAPE-13

NXP Semiconductors

PNP

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

150 Cel

6 pF

SILICON

300 V

DUAL

R-PDSO-G3

Not Qualified

PMBTA55TRL13

NXP Semiconductors

PNP

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

.25 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

60 V

DUAL

R-PDSO-G3

Not Qualified

BCV28-TAPE-7

NXP Semiconductors

PNP

DARLINGTON

YES

220 MHz

.5 A

PLASTIC/EPOXY

1 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

4000

150 Cel

SILICON

30 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395