.9 A Small Signal Bipolar Junction Transistors (BJT) 11

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

FMMT634TA

Diodes Incorporated

NPN

DARLINGTON

YES

.806 W

.9 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

15000

150 Cel

SILICON

100 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

FCX634

Diodes Incorporated

NPN

DARLINGTON

YES

140 MHz

.9 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

15000

SILICON

100 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FMMT634TC

Diodes Incorporated

NPN

DARLINGTON

YES

.9 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

15000

SILICON

100 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FMMT411TA

Diodes Incorporated

NPN

SINGLE

YES

40 MHz

.8 W

.9 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

15 pF

SILICON

15 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G3

e3

260

MIL-STD-202

UFMMT634TA

Diodes Incorporated

NPN

DARLINGTON

YES

.9 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

15000

SILICON

100 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FMMT634

Diodes Incorporated

NPN

DARLINGTON

YES

140 MHz

.625 W

.9 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

15000

150 Cel

SILICON

100 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

UFMMT634TC

Diodes Incorporated

NPN

DARLINGTON

YES

.9 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

15000

SILICON

100 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FMMT411TD

Diodes Incorporated

NPN

SINGLE

YES

40 MHz

.8 W

.9 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

15 pF

SILICON

15 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G3

e3

260

MIL-STD-202

FMMT634QTA

Diodes Incorporated

NPN

DARLINGTON

YES

140 MHz

.9 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

5000

SILICON

100 V

MATTE TIN

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

UFMMT634

Diodes Incorporated

NPN

DARLINGTON

YES

140 MHz

.9 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

15000

SILICON

100 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

40

260

TPCP8L01

Toshiba

NPN

DARLINGTON WITH BUILT-IN DIODE

YES

.9 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

8

SMALL OUTLINE

SILICON

120 V

DUAL

R-PDSO-F8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395