1 A Small Signal Bipolar Junction Transistors (BJT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

FXT68STOF

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

85

SILICON

20 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UZTX705STOB

Diodes Incorporated

PNP

DARLINGTON

NO

160 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

2000

SILICON

120 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

2DD1664Q-13

Diodes Incorporated

NPN

SINGLE

YES

280 MHz

1 W

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

32 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

FXT603

Diodes Incorporated

NPN

DARLINGTON

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

500

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

2N6725Q

Diodes Incorporated

NPN

DARLINGTON

NO

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

4000

SILICON

50 V

SINGLE

R-PSIP-W3

Not Qualified

FXT551STOE

Diodes Incorporated

PNP

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

50

SILICON

60 V

SINGLE

R-PSIP-T3

Not Qualified

BSR30TA

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

60 V

500 ns

650 ns

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

FXT755SMTA

Diodes Incorporated

PNP

SINGLE

YES

30 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

150 V

SINGLE

R-PSSO-G3

Not Qualified

DCX69-25TA

Diodes Incorporated

PNP

SINGLE

YES

200 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

20 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

HIGH RELIABILITY

e3

260

AEC-Q101

2N6716SM

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

60 V

SINGLE

R-PSSO-G3

Not Qualified

FXT603SM

Diodes Incorporated

NPN

DARLINGTON

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

500

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

2N6727STZ

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

40 V

SINGLE

R-PSIP-W3

Not Qualified

FXT449

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

30 V

SINGLE

R-PSIP-W3

Not Qualified

FXT601BSTOB

Diodes Incorporated

NPN

DARLINGTON

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

5000

SILICON

160 V

SINGLE

R-PSIP-W3

Not Qualified

UZTX549A

Diodes Incorporated

PNP

SINGLE

NO

100 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

30 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

10

260

FCX593TC

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

100 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

260

FXT655SMTA

Diodes Incorporated

NPN

SINGLE

YES

30 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

150 V

SINGLE

R-PSSO-G3

Not Qualified

UZXTD4591E6TA

Diodes Incorporated

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

15

150 Cel

SILICON

60 V

Matte Tin (Sn)

DUAL

R-PDSO-G6

1

Not Qualified

e3

40

260

2DD1664R-13

Diodes Incorporated

NPN

SINGLE

YES

280 MHz

1 W

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

180

150 Cel

SILICON

32 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

DCP56-13

Diodes Incorporated

NPN

SINGLE

YES

200 MHz

1 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

25

150 Cel

SILICON

80 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

2N6729Q

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

2N6728STOA

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

60 V

SINGLE

R-PSIP-W3

Not Qualified

UZTX449M1TC

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

30 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2N6731M1TC

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

FXT56SM

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FXT603STZ

Diodes Incorporated

NPN

DARLINGTON

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

500

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

DCX52-16-13

Diodes Incorporated

PNP

SINGLE

YES

200 MHz

1 W

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

60 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

260

UBSR43TA

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

80 V

250 ns

1000 ns

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2N6715K

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

40 V

SINGLE

R-PSIP-W3

Not Qualified

UZTX655STOB

Diodes Incorporated

NPN

SINGLE

NO

30 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

150 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

FXT605STZ

Diodes Incorporated

NPN

DARLINGTON

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

500

SILICON

120 V

SINGLE

R-PSIP-W3

Not Qualified

BFS97K

Diodes Incorporated

PNP

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

40 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

FXT52STOF

Diodes Incorporated

PNP

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

40

SILICON

60 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

FCX495-13R

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

10

SILICON

150 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

HIGH RELIABILITY

e3

30

260

AEC-Q101

ZTX360SMTA

Diodes Incorporated

NPN

SINGLE

YES

200 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

SILICON

40 V

40 ns

75 ns

SINGLE

R-PSSO-G3

Not Qualified

2N6731M1TA

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

2N6726STOA

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

30 V

SINGLE

R-PSIP-W3

Not Qualified

BFS60Q

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

40 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

FXT551STOF

Diodes Incorporated

PNP

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

50

SILICON

60 V

SINGLE

R-PSIP-T3

Not Qualified

2N6717K

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

DPBT8105-7

Diodes Incorporated

PNP

SINGLE

YES

150 MHz

.6 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

UZTX603

Diodes Incorporated

NPN

DARLINGTON

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

2000

SILICON

80 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

e3

10

260

CECC

FXT450STZ

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

15

SILICON

45 V

SINGLE

R-PSIP-W3

Not Qualified

UBCX69TA

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

85

SILICON

20 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UZTX449M1TA

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

30 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UZTX776STOA

Diodes Incorporated

PNP

SINGLE

NO

30 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

200 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UZUMT619

Diodes Incorporated

NPN

SINGLE

YES

215 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UFCX491A

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

300

SILICON

40 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

40

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395