1.25 A Small Signal Bipolar Junction Transistors (BJT) 30

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

ZUMT717TA

Diodes Incorporated

PNP

SINGLE

YES

220 MHz

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

12 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

FMMTL717TA

Diodes Incorporated

PNP

SINGLE

YES

205 MHz

1.25 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

180

SILICON

12 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

ZUMT618TA

Diodes Incorporated

NPN

SINGLE

YES

210 MHz

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

150 Cel

SILICON

20 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

UZUMT717

Diodes Incorporated

PNP

SINGLE

YES

220 MHz

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

12 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UZUMT717TC

Diodes Incorporated

PNP

SINGLE

YES

220 MHz

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

12 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZXTS1000E6TC

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN DIODE

YES

220 MHz

.885 W

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

12 V

DUAL

R-PDSO-G6

Not Qualified

260

UZUMT618TA

Diodes Incorporated

NPN

SINGLE

YES

210 MHz

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

150 Cel

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UZUMT717TA

Diodes Incorporated

PNP

SINGLE

YES

220 MHz

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

12 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZUMT618TC

Diodes Incorporated

NPN

SINGLE

YES

210 MHz

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

150 Cel

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZXTS1000E6TA

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN DIODE

YES

220 MHz

.885 W

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

12 V

MATTE TIN

DUAL

R-PDSO-G6

1

Not Qualified

e3

260

UZXTS1000E6TA

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN DIODE

YES

220 MHz

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

30

125 Cel

SILICON

12 V

Matte Tin (Sn)

DUAL

R-PDSO-G6

1

Not Qualified

e3

40

260

ZUMT717TC

Diodes Incorporated

PNP

SINGLE

YES

220 MHz

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

12 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UZXTS1000E6TC

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN DIODE

YES

220 MHz

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

30

125 Cel

SILICON

12 V

Matte Tin (Sn)

DUAL

R-PDSO-G6

1

Not Qualified

e3

40

260

ZUMT717

Diodes Incorporated

PNP

SINGLE

YES

220 MHz

.5 W

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

12 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

UZUMT618

Diodes Incorporated

NPN

SINGLE

YES

210 MHz

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

150 Cel

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZUMT618

Diodes Incorporated

NPN

SINGLE

YES

210 MHz

.5 W

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

20 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

UZUMT618TC

Diodes Incorporated

NPN

SINGLE

YES

210 MHz

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

150 Cel

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UFMMTL717

Diodes Incorporated

PNP

SINGLE

YES

205 MHz

1.25 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

180

SILICON

12 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

40

260

UFMMTL717TC

Diodes Incorporated

PNP

SINGLE

YES

205 MHz

1.25 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

180

SILICON

12 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FMMTL717QTA

Diodes Incorporated

PNP

SINGLE

YES

205 MHz

1.25 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

12 V

MATTE TIN

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

FMMTL619

Diodes Incorporated

NPN

SINGLE

YES

180 MHz

.5 W

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

50 V

182 ns

379 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

UFMMTL619

Diodes Incorporated

NPN

SINGLE

YES

180 MHz

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

50 V

182 ns

379 ns

Matte Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

40

260

FMMTL619TA

Diodes Incorporated

NPN

SINGLE

YES

180 MHz

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

50 V

182 ns

379 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

UFMMTL618

Diodes Incorporated

NPN

SINGLE

YES

195 MHz

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

150 Cel

SILICON

20 V

72 ns

388 ns

Matte Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

40

260

ZXTP26020DMFTA

Diodes Incorporated

PNP

SINGLE

YES

200 MHz

1 W

1.25 A

PLASTIC/EPOXY

.235 V

NO LEAD

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

140

150 Cel

20 pF

SILICON

20 V

60 ns

-55 Cel

167 ns

NICKEL PALLADIUM GOLD

SINGLE

R-PSSO-N2

1

COLLECTOR

Not Qualified

HIGH RELIABLITY

e4

30

260

UFMMTL717TA

Diodes Incorporated

PNP

SINGLE

YES

205 MHz

1.25 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

180

SILICON

12 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FMMTL618

Diodes Incorporated

NPN

SINGLE

YES

195 MHz

.5 W

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

20 V

72 ns

388 ns

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

FMMTL717

Diodes Incorporated

PNP

SINGLE

YES

205 MHz

.5 W

1.25 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

180

150 Cel

SILICON

12 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

FMMTL717TC

Diodes Incorporated

PNP

SINGLE

YES

205 MHz

1.25 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

180

SILICON

12 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

FMMTL619TC

Diodes Incorporated

NPN

SINGLE

YES

180 MHz

1.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

50 V

182 ns

379 ns

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395