10 A Small Signal Bipolar Junction Transistors (BJT) 20

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SA1834TLR

ROHM

PNP

SINGLE

YES

150 MHz

10 W

10 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

180

150 Cel

SILICON

20 V

Tin/Copper (Sn/Cu)

SINGLE

R-PSSO-G2

Not Qualified

e2

10

260

2SA1834TL

ROHM

PNP

SINGLE

YES

150 MHz

10 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

82

150 Cel

SILICON

20 V

TIN COPPER

SINGLE

R-PSSO-G2

Not Qualified

e2

2SC5001TLQ

ROHM

NPN

SINGLE

YES

150 MHz

10 W

10 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

20 V

TIN COPPER

SINGLE

R-PSSO-G2

Not Qualified

e2

10

260

2SC5001TLR

ROHM

NPN

SINGLE

YES

150 MHz

10 W

10 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

180

150 Cel

SILICON

20 V

TIN COPPER

SINGLE

R-PSSO-G2

Not Qualified

e2

10

260

2SA1649-Z

Renesas Electronics

PNP

SINGLE

YES

120 MHz

10 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

60

150 Cel

SILICON

30 V

300 ns

1800 ns

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252AA

2SA1649-ZM

Renesas Electronics

PNP

SINGLE

YES

120 MHz

15 W

10 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

30 V

300 ns

1800 ns

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-252AA

e0

2SA1615-K

Renesas Electronics

PNP

SINGLE

NO

180 MHz

15 W

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

300

150 Cel

SILICON

20 V

TIN LEAD

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e0

2SA1649-ZK

Renesas Electronics

PNP

SINGLE

YES

120 MHz

15 W

10 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

30 V

300 ns

1800 ns

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-252AA

e0

2SA1615

Renesas Electronics

PNP

SINGLE

NO

180 MHz

15 W

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

160

150 Cel

SILICON

20 V

TIN LEAD

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e0

2SA1649-K

Renesas Electronics

PNP

SINGLE

NO

120 MHz

15 W

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

200

150 Cel

SILICON

30 V

300 ns

1800 ns

TIN LEAD

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

TO-251AA

e0

2SA1615-Z

Renesas Electronics

PNP

SINGLE

YES

180 MHz

1 W

10 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

160

150 Cel

SILICON

20 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

2SA1649

Renesas Electronics

PNP

SINGLE

NO

120 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

60

150 Cel

SILICON

30 V

300 ns

1800 ns

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

TO-251AA

2SA1615-ZL

Renesas Electronics

PNP

SINGLE

YES

180 MHz

15 W

10 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

20 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

2SA1615-L

Renesas Electronics

PNP

SINGLE

NO

180 MHz

15 W

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

200

150 Cel

SILICON

20 V

TIN LEAD

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e0

2SA1615-ZK

Renesas Electronics

PNP

SINGLE

YES

180 MHz

15 W

10 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

300

150 Cel

SILICON

20 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

2SA1649-L

Renesas Electronics

PNP

SINGLE

NO

120 MHz

15 W

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

150

150 Cel

SILICON

30 V

300 ns

1800 ns

TIN LEAD

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

TO-251AA

e0

2SA1649-M

Renesas Electronics

PNP

SINGLE

NO

120 MHz

15 W

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

100

150 Cel

SILICON

30 V

300 ns

1800 ns

TIN LEAD

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

TO-251AA

e0

2SA1649-ZL

Renesas Electronics

PNP

SINGLE

YES

120 MHz

15 W

10 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

30 V

300 ns

1800 ns

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-252AA

e0

KSE3055T

Samsung

NPN

SINGLE

NO

2 MHz

75 W

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

5

150 Cel

SILICON

60 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

KSE2955T

Samsung

PNP

SINGLE

NO

2 MHz

75 W

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

5

150 Cel

SILICON

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395