2 A Small Signal Bipolar Junction Transistors (BJT) 1,395

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

ZTX753L

Diodes Incorporated

PNP

SINGLE

NO

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

25

SILICON

100 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

ZTX690BSM

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

150

SILICON

45 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZTX652STZ

Diodes Incorporated

NPN

SINGLE

NO

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

25

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

CECC

ZTX690BSTOB

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

150

SILICON

45 V

Matte Tin (Sn)

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZTX752

Diodes Incorporated

PNP

SINGLE

NO

140 MHz

2 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

ZTX751SMTA

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

60 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZXTN25020DFLTA

Diodes Incorporated

NPN

SINGLE

YES

215 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

150 Cel

SILICON

20 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

260

ZTX689BM1TA

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

400

SILICON

20 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SA1213TA

Diodes Incorporated

PNP

SINGLE

YES

120 MHz

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

50 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZTX752SM

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

ZTX750K

Diodes Incorporated

PNP

SINGLE

NO

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

45 V

SINGLE

R-PSIP-W3

Not Qualified

CECC

ZTX750Q

Diodes Incorporated

PNP

SINGLE

NO

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

45 V

SINGLE

R-PSIP-W3

Not Qualified

CECC

ZTX649SM

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

15

SILICON

25 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZTX692BL

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

150

SILICON

70 V

Matte Tin (Sn)

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZTX751SM

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

60 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZTX650SMTA

Diodes Incorporated

NPN

SINGLE

YES

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

45 V

SINGLE

R-PSSO-G3

Not Qualified

ZTX749L

Diodes Incorporated

PNP

SINGLE

NO

160 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

15

SILICON

25 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZTX653M1TA

Diodes Incorporated

NPN

SINGLE

YES

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

SILICON

100 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CECC

ZTX690BL

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

150

SILICON

45 V

Matte Tin (Sn)

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UFMMT619

Diodes Incorporated

NPN

SINGLE

YES

165 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

40

260

ZTX753SM

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

SILICON

100 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZTX790ASTOA

Diodes Incorporated

PNP

SINGLE

NO

100 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

150

SILICON

40 V

MATTE TIN

SINGLE

R-PSIP-W3

1

Not Qualified

e3

ZTX652SM

Diodes Incorporated

NPN

SINGLE

YES

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

ZTX651SM

Diodes Incorporated

NPN

SINGLE

YES

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

60 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZTX790ASTZ

Diodes Incorporated

PNP

SINGLE

NO

100 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

150

SILICON

40 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

30

260

ZTX751SMTC

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

60 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZTX749K

Diodes Incorporated

PNP

SINGLE

NO

160 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

15

SILICON

25 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZTX753M1TC

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

SILICON

100 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CECC

ZTX651SMTA

Diodes Incorporated

NPN

SINGLE

YES

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

60 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZTX652STOA

Diodes Incorporated

NPN

SINGLE

NO

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

25

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

CECC

ZTX792ASM

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

70 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZTX690BK

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

150

SILICON

45 V

Matte Tin (Sn)

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZTX652SMTA

Diodes Incorporated

NPN

SINGLE

YES

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

ZTX651L

Diodes Incorporated

NPN

SINGLE

NO

175 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

60 V

Matte Tin (Sn)

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

ZTX650

Diodes Incorporated

NPN

SINGLE

NO

175 MHz

2 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

SILICON

45 V

SINGLE

R-PSIP-W3

Not Qualified

ZTX690BSMTA

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

150

SILICON

45 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SC2873YTA

Diodes Incorporated

NPN

SINGLE

YES

120 MHz

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

50 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SD2536

Toshiba

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

2 A

PLASTIC/EPOXY

SWITCHING

1.5 V

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

2000

150 Cel

SILICON

85 V

SINGLE

R-PSIP-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RN6006

Toshiba

PNP

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

140 MHz

.5 W

2 A

PLASTIC/EPOXY

SWITCHING

.5 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

1 W

60

150 Cel

SILICON

10 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR

e0

TPC6902

Toshiba

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

50

150 Cel

SILICON

30 V

DUAL

R-PDSO-G6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RN5003

Toshiba

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

120 MHz

.5 W

2 A

PLASTIC/EPOXY

SWITCHING

.5 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

1 W

30

150 Cel

SILICON

30 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR

e0

2SD2088TPE6

Toshiba

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

100 MHz

2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

2000

SILICON

70 V

BOTTOM

O-PBCY-T3

Not Qualified

BUILT-IN BIAS RESISTOR

NOT SPECIFIED

NOT SPECIFIED

TPC6501

Toshiba

NPN

SINGLE

YES

.8 W

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

10 V

DUAL

R-PDSO-G6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SD2088

Toshiba

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

100 MHz

2 A

PLASTIC/EPOXY

SWITCHING

1.5 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

2000

150 Cel

SILICON

50 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

HN4B102J(TE85L)

Toshiba

NPN AND PNP

YES

.75 W

2 A

BIP General Purpose Small Signal

200

150 Cel

RN6001(TE12R)

Toshiba

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

120 MHz

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR

TTC015B,Q(S

Toshiba

NPN

SINGLE

NO

150 MHz

2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

60

SILICON

80 V

SINGLE

R-PSFM-T3

TO-126

RN5006(TE12L)

Toshiba

NPN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

140 MHz

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395