2 A Small Signal Bipolar Junction Transistors (BJT) 1,395

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SD1033-E2

Renesas Electronics

NPN

SINGLE

YES

10 MHz

2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

40

SILICON

150 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

2SD1583-ZM-E1

Renesas Electronics

NPN

SINGLE

YES

270 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

800

SILICON

20 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

2SB1519FSTL

Renesas Electronics

PNP

SINGLE

YES

2 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

120

SILICON

50 V

SINGLE

R-PSSO-F3

Not Qualified

2SA1412-Z-E2

Renesas Electronics

PNP

SINGLE

YES

40 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

10

150 Cel

SILICON

400 V

500 ns

2700 ns

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

2SB1114ZM-T1

Renesas Electronics

PNP

SINGLE

YES

180 MHz

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

135

150 Cel

SILICON

20 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

2SD1583-ZM-E2

Renesas Electronics

NPN

SINGLE

YES

270 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

800

SILICON

20 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

2SD1367BA

Renesas Electronics

NPN

SINGLE

YES

100 MHz

2 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

16 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

2SD1367

Renesas Electronics

NPN

SINGLE

YES

100 MHz

2 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

16 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

2SB1114ZK-T2-AZ

Renesas Electronics

PNP

SINGLE

YES

180 MHz

2 W

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

300

150 Cel

SILICON

20 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SB1114ZL-T1-AZ

Renesas Electronics

PNP

SINGLE

YES

180 MHz

2 W

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

20 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SD1950VK-T2

Renesas Electronics

NPN

SINGLE

YES

350 MHz

2 W

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

2000

150 Cel

SILICON

25 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

2SD1950VL-T2-AZ

Renesas Electronics

NPN

SINGLE

YES

350 MHz

2 W

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

1200

150 Cel

SILICON

25 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SD1614XK-AZ

Renesas Electronics

NPN

SINGLE

YES

200 MHz

2 W

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

300

150 Cel

SILICON

20 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SB1058RF

Renesas Electronics

PNP

SINGLE

NO

2 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

100

SILICON

16 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SD1033L-E1

Renesas Electronics

NPN

SINGLE

YES

10 MHz

2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

60

SILICON

150 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

2SD1614XK-T2-AZ

Renesas Electronics

NPN

SINGLE

YES

200 MHz

2 W

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

300

150 Cel

SILICON

20 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SA1412-Z-AZ

Renesas Electronics

PNP

SINGLE

YES

40 MHz

20 W

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

10

150 Cel

SILICON

400 V

500 ns

2700 ns

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

10

260

2SD1950VK-AZ

Renesas Electronics

NPN

SINGLE

YES

350 MHz

2 W

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

2000

150 Cel

SILICON

25 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SB1433TZ

Renesas Electronics

PNP

SINGLE

NO

2 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

120

SILICON

50 V

BOTTOM

O-PBCY-W3

Not Qualified

2SD1367BAUL

Renesas Electronics

NPN

SINGLE

YES

100 MHz

2 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

16 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

2SD1367BCTL

Renesas Electronics

NPN

SINGLE

YES

100 MHz

2 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

250

SILICON

16 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

2SD1367BBUL

Renesas Electronics

NPN

SINGLE

YES

100 MHz

2 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

160

SILICON

16 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

2SD1489BRR

Renesas Electronics

NPN

SINGLE

NO

80 MHz

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

100

SILICON

16 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SD1489CRF

Renesas Electronics

NPN

SINGLE

NO

80 MHz

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

160

SILICON

16 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SD1513K

Renesas Electronics

NPN

SINGLE

NO

200 MHz

.75 W

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

200

150 Cel

SILICON

16 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

2SB1519FSTR

Renesas Electronics

PNP

SINGLE

YES

2 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

120

SILICON

50 V

SINGLE

R-PSSO-F3

Not Qualified

2SD1033M-E1

Renesas Electronics

NPN

SINGLE

YES

10 MHz

2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

40

SILICON

150 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

2SB1459RF

Renesas Electronics

PNP

SINGLE

NO

2 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

120

SILICON

80 V

BOTTOM

O-PBCY-W3

Not Qualified

2SB1114ZK-T1-AZ

Renesas Electronics

PNP

SINGLE

YES

180 MHz

2 W

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

300

150 Cel

SILICON

20 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SD1614XM-T2

Renesas Electronics

NPN

SINGLE

YES

200 MHz

2 W

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

20 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

2SD1614XL-T1-AZ

Renesas Electronics

NPN

SINGLE

YES

200 MHz

2 W

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

20 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SD1367BC

Renesas Electronics

NPN

SINGLE

YES

100 MHz

2 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

250

SILICON

16 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

2SC2885-N

Renesas Electronics

NPN

SINGLE

NO

15 W

2 A

UNSPECIFIED

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

20

150 Cel

SILICON

200 V

1000 ns

3000 ns

SINGLE

R-XSIP-T3

COLLECTOR

Not Qualified

2SD1489

Renesas Electronics

NPN

SINGLE

NO

80 MHz

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

100

150 Cel

SILICON

16 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SD1614XL-AZ

Renesas Electronics

NPN

SINGLE

YES

200 MHz

2 W

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

20 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SB1114ZM-T1-AZ

Renesas Electronics

PNP

SINGLE

YES

180 MHz

2 W

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

20 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SB1433RR

Renesas Electronics

PNP

SINGLE

NO

2 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

120

SILICON

50 V

BOTTOM

O-PBCY-W3

Not Qualified

2SD1513L-AZ

Renesas Electronics

NPN

SINGLE

NO

200 MHz

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

135

SILICON

16 V

TIN BISMUTH

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e6

2SB739TZ

Renesas Electronics

PNP

SINGLE

NO

2 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

100

SILICON

20 V

BOTTOM

O-PBCY-W3

Not Qualified

2SB1433

Renesas Electronics

PNP

SINGLE

NO

2 A

PLASTIC/EPOXY

AMPLIFIER

.2 V

WIRE

ROUND

1

3

CYLINDRICAL

120

SILICON

50 V

BOTTOM

O-PBCY-W3

Not Qualified

2SD1950VL-T1-AZ

Renesas Electronics

NPN

SINGLE

YES

350 MHz

2 W

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

1200

150 Cel

SILICON

25 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SB1519FS

Renesas Electronics

PNP

SINGLE

YES

2 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

120

SILICON

50 V

SINGLE

R-PSSO-F3

Not Qualified

2SA1412-ZK-E2

Renesas Electronics

PNP

SINGLE

YES

40 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

60

150 Cel

SILICON

400 V

500 ns

2700 ns

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

2SD1583-ZL-E1

Renesas Electronics

NPN

SINGLE

YES

270 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

1000

SILICON

20 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

2SA1412-ZL-E2

Renesas Electronics

PNP

SINGLE

YES

40 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

40

150 Cel

SILICON

400 V

500 ns

2700 ns

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

2SD1033K-AZ

Renesas Electronics

NPN

SINGLE

YES

10 MHz

2 W

2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

150 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SB1459TZ-E

Renesas Electronics

PNP

SINGLE

NO

2 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

120

SILICON

80 V

TIN COPPER

BOTTOM

O-PBCY-W3

1

Not Qualified

e2

2SB1114ZL-T2-AZ

Renesas Electronics

PNP

SINGLE

YES

180 MHz

2 W

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

20 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395