2.5 A Small Signal Bipolar Junction Transistors (BJT) 65

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SA2061

Toshiba

PNP

SINGLE

YES

1 W

2.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SD2121SC

Renesas Electronics

NPN

SINGLE

YES

2.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

100

150 Cel

SILICON

35 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

2SD2121LB

Renesas Electronics

NPN

SINGLE

NO

2.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

60

150 Cel

SILICON

35 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

2SA715

Renesas Electronics

PNP

SINGLE

NO

160 MHz

2.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

SILICON

35 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SA715C

Renesas Electronics

PNP

SINGLE

NO

160 MHz

10 W

2.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

100

150 Cel

SILICON

35 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SD2121SD

Renesas Electronics

NPN

SINGLE

YES

2.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

160

150 Cel

SILICON

35 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

2SD2121LC

Renesas Electronics

NPN

SINGLE

NO

2.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

100

150 Cel

SILICON

35 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

2SD2121S

Renesas Electronics

NPN

SINGLE

YES

2.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

20

150 Cel

SILICON

35 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

2SD2121SB

Renesas Electronics

NPN

SINGLE

YES

2.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

60

150 Cel

SILICON

35 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

2SA715D

Renesas Electronics

PNP

SINGLE

NO

160 MHz

10 W

2.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

160

150 Cel

SILICON

35 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SD2121L

Renesas Electronics

NPN

SINGLE

NO

2.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

20

150 Cel

SILICON

35 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

2SA715B

Renesas Electronics

PNP

SINGLE

NO

160 MHz

10 W

2.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

60

150 Cel

SILICON

35 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SD2121LD

Renesas Electronics

NPN

SINGLE

NO

2.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

160

150 Cel

SILICON

35 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

2SC1162D

Renesas Electronics

NPN

SINGLE

NO

180 MHz

10 W

2.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

160

150 Cel

SILICON

35 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SC1162C

Renesas Electronics

NPN

SINGLE

NO

180 MHz

10 W

2.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

100

150 Cel

SILICON

35 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SC1162B

Renesas Electronics

NPN

SINGLE

NO

180 MHz

10 W

2.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

60

150 Cel

SILICON

35 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SC1162

Renesas Electronics

NPN

SINGLE

NO

180 MHz

2.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

SILICON

35 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395