4.7 A Small Signal Bipolar Junction Transistors (BJT) 9

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

934059011115

NXP Semiconductors

NPN

SINGLE

YES

130 MHz

4.7 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

75

SILICON

60 V

110 ns

555 ns

SINGLE

R-PSSO-F3

COLLECTOR

TO-243AA

934063406115

NXP Semiconductors

NPN

SINGLE

YES

145 MHz

4.7 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

150

SILICON

30 V

SINGLE

R-PSSO-F3

COLLECTOR

PBSS304NX

NXP Semiconductors

NPN

SINGLE

YES

130 MHz

2.1 W

4.7 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

75

150 Cel

SILICON

60 V

110 ns

555 ns

Tin (Sn)

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

TO-243AA

e3

30

260

PBSS304NX,115

NXP Semiconductors

NPN

SINGLE

YES

130 MHz

2.1 W

4.7 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

75

150 Cel

SILICON

60 V

110 ns

555 ns

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

PBSS4032NX

NXP Semiconductors

NPN

SINGLE

YES

145 MHz

4.7 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

150

150 Cel

SILICON

30 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

934059011146

Nexperia

NPN

SINGLE

YES

130 MHz

2.1 W

4.7 A

PLASTIC/EPOXY

SWITCHING

.245 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

75

150 Cel

70 pF

SILICON

60 V

-65 Cel

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

AEC-Q101; IEC-60134

PBSS4032NX,120

Nexperia

NPN

SINGLE

YES

145 MHz

2.5 W

4.7 A

PLASTIC/EPOXY

SWITCHING

.34 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

150

150 Cel

65 pF

SILICON

30 V

-55 Cel

SINGLE

R-PSSO-F3

COLLECTOR

AEC-Q101; IEC-60134

PBSS304NXZ

Nexperia

NPN

SINGLE

YES

130 MHz

2.1 W

4.7 A

PLASTIC/EPOXY

SWITCHING

.245 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

75

150 Cel

70 pF

SILICON

60 V

-65 Cel

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

AEC-Q101; IEC-60134

PBSS4032NX,135

Nexperia

NPN

SINGLE

YES

145 MHz

2.5 W

4.7 A

PLASTIC/EPOXY

SWITCHING

.34 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

150

150 Cel

65 pF

SILICON

30 V

-55 Cel

SINGLE

R-PSSO-F3

COLLECTOR

AEC-Q101; IEC-60134

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395