5.5 A Small Signal Bipolar Junction Transistors (BJT) 13

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PBSS303NZ,135

NXP Semiconductors

NPN

SINGLE

YES

130 MHz

2 W

5.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

30 V

65 ns

375 ns

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

ZXTP19020DFFTA

Diodes Incorporated

PNP

SINGLE

YES

176 MHz

2 W

5.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

25

150 Cel

SILICON

20 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

934059049135

NXP Semiconductors

PNP

SINGLE

YES

130 MHz

5.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

100

SILICON

20 V

65 ns

350 ns

DUAL

R-PDSO-G4

COLLECTOR

934059044135

NXP Semiconductors

NPN

SINGLE

YES

130 MHz

5.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

150

SILICON

30 V

65 ns

375 ns

DUAL

R-PDSO-G4

COLLECTOR

PBSS302PZ,135

NXP Semiconductors

PNP

SINGLE

YES

130 MHz

2 W

5.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

250

150 Cel

SILICON

20 V

65 ns

350 ns

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

PBSS303NZ

NXP Semiconductors

NPN

SINGLE

YES

130 MHz

2 W

5.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

30 V

65 ns

375 ns

Tin (Sn)

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

PBSS302PZ

NXP Semiconductors

PNP

SINGLE

YES

130 MHz

2 W

5.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

20 V

65 ns

350 ns

Tin (Sn)

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

PBSS303NZ,115

Nexperia

NPN

SINGLE

YES

130 MHz

5.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

150

SILICON

30 V

65 ns

375 ns

DUAL

R-PDSO-G4

COLLECTOR

IEC-60134

DXT2012P5-13

Diodes Incorporated

PNP

SINGLE

YES

120 MHz

3.2 W

5.5 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-F3

1

Not Qualified

TO-252

e3

30

260

ZX5T3ZTC

Diodes Incorporated

PNP

SINGLE

YES

152 MHz

5.5 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

110

SILICON

40 V

Matte Tin (Sn)

SINGLE

R-PSSO-F3

1

COLLECTOR

HIGH RELIABILITY

e3

30

260

AEC-Q101

ZX5T3ZTA

Diodes Incorporated

PNP

SINGLE

YES

152 MHz

3 W

5.5 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

110

150 Cel

SILICON

40 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

260

ZXTP2009ZQTA

Diodes Incorporated

PNP

SINGLE

YES

152 MHz

2.1 W

5.5 A

PLASTIC/EPOXY

SWITCHING

.185 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

110

150 Cel

53 pF

SILICON

40 V

-55 Cel

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

HIGH RELIABILITY

e3

30

260

AEC-Q101

ZXTN19060CFFTA

Diodes Incorporated

NPN

SINGLE

YES

130 MHz

2 W

5.5 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

60 V

40.5 ns

159.1 ns

MATTE TIN

DUAL

R-PDSO-F3

1

Not Qualified

e3

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395