5.7 A Small Signal Bipolar Junction Transistors (BJT) 13

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PBSS4032SPN,115

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

140 MHz

2.3 W

5.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

BIP General Purpose Small Signal

150

150 Cel

SILICON

30 V

DUAL

R-PDSO-G8

1

Not Qualified

30

260

934059048135

NXP Semiconductors

PNP

SINGLE

YES

140 MHz

5.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

100

SILICON

12 V

65 ns

325 ns

DUAL

R-PDSO-G4

COLLECTOR

934063417115

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

140 MHz

5.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

150

SILICON

30 V

DUAL

R-PDSO-G8

934063396115

NXP Semiconductors

PNP

SINGLE

YES

110 MHz

5.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

120

SILICON

60 V

DUAL

R-PDSO-G4

COLLECTOR

934063415115

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS

YES

140 MHz

5.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

150

SILICON

30 V

DUAL

R-PDSO-G8

PBSS4032SN,115

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS

YES

140 MHz

2.3 W

5.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

30 V

DUAL

R-PDSO-G8

1

Not Qualified

30

260

PBSS4032SN,118

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS

YES

140 MHz

5.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

150

150 Cel

SILICON

30 V

DUAL

R-PDSO-G8

Not Qualified

PBSS301PZ

NXP Semiconductors

PNP

SINGLE

YES

140 MHz

2 W

5.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

12 V

65 ns

325 ns

Tin (Sn)

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

PBSS301PZ,135

NXP Semiconductors

PNP

SINGLE

YES

140 MHz

2 W

5.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

250

150 Cel

SILICON

12 V

65 ns

325 ns

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

PBSS4032SN

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS

YES

140 MHz

5.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

150

150 Cel

SILICON

30 V

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

1

Not Qualified

e4

PBSS4032SPN,118

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

140 MHz

5.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

150

150 Cel

SILICON

30 V

DUAL

R-PDSO-G8

Not Qualified

PBSS4041PZ

NXP Semiconductors

PNP

SINGLE

YES

110 MHz

5.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

120

150 Cel

SILICON

60 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

PBSS4032SPN

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

140 MHz

5.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

150

150 Cel

SILICON

30 V

DUAL

R-PDSO-G8

1

Not Qualified

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395