7 A Small Signal Bipolar Junction Transistors (BJT) 11

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SA2197

Onsemi

PNP

SINGLE

NO

250 MHz

10 W

7 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

200

150 Cel

SILICON

30 V

SINGLE

R-PSFM-T3

Not Qualified

TO-126

2SC6102

Onsemi

NPN

SINGLE

NO

290 MHz

10 W

7 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

200

150 Cel

SILICON

30 V

SINGLE

R-PSFM-T3

Not Qualified

TO-126

BUY47

STMicroelectronics

NPN

SINGLE

NO

90 MHz

10 W

7 A

METAL

SWITCHING

1 V

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

10 W

15

200 Cel

80 pF

SILICON

120 V

1000 ns

2000 ns

TIN LEAD

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-39

e0

BUY68

STMicroelectronics

NPN

SINGLE

NO

50 MHz

.87 W

7 A

METAL

SWITCHING

1 V

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

10 W

40

200 Cel

80 pF

SILICON

60 V

350 ns

750 ns

TIN LEAD

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-39

e0

BUY48

STMicroelectronics

NPN

SINGLE

NO

90 MHz

10 W

7 A

METAL

SWITCHING

1 V

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

10 W

15

200 Cel

80 pF

SILICON

170 V

1000 ns

2000 ns

MATTE TIN

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-39

e3

934063402115

NXP Semiconductors

NPN

SINGLE

YES

115 MHz

7 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

20 V

SINGLE

R-PSSO-F3

COLLECTOR

934063395115

NXP Semiconductors

NPN

SINGLE

YES

105 MHz

7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

50

SILICON

60 V

DUAL

R-PDSO-G4

COLLECTOR

PBSS4021NX

NXP Semiconductors

NPN

SINGLE

YES

115 MHz

7 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

20 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

AEC-Q101; IEC-60134

PBSS4041NZ

NXP Semiconductors

NPN

SINGLE

YES

105 MHz

7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

50

150 Cel

SILICON

60 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

ZXTN19020CFFTA

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

2 W

7 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

45

150 Cel

SILICON

20 V

252 ns

375 ns

MATTE TIN

DUAL

R-PDSO-F3

1

Not Qualified

e3

30

260

TTB1020B,S4X(S

Toshiba

PNP

NO

30 W

7 A

2

BIP General Purpose Small Signal

2000

SILICON

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395