.125 W Small Signal Bipolar Junction Transistors (BJT) 11

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BC857BTT1

Onsemi

PNP

SINGLE

YES

100 MHz

.125 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

220

150 Cel

SILICON

45 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

1

Not Qualified

e0

30

235

DME914C10R

Panasonic

NPN AND PNP

YES

.125 W

.5 A

2

Other Transistors

80

SILICON

2N338

Texas Instruments

NPN

SINGLE

NO

20 MHz

.125 W

.02 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

45

150 Cel

SILICON

30 V

50 ns

100 ns

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

3N34

Texas Instruments

NPN

SINGLE

NO

100 MHz

.125 W

.02 A

METAL

AMPLIFIER

WIRE

ROUND

1

4

CYLINDRICAL

Other Transistors

150 Cel

SILICON

30 V

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-12

NOT SPECIFIED

NOT SPECIFIED

2N337

Texas Instruments

NPN

SINGLE

NO

10 MHz

.125 W

.02 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

20

150 Cel

SILICON

30 V

50 ns

100 ns

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

S2SC4617G

Onsemi

NPN

SINGLE

YES

180 MHz

.125 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101

2SC4617T1G

Onsemi

NPN

SINGLE

YES

180 MHz

.125 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

2SC4617

Onsemi

NPN

SINGLE

YES

180 MHz

.125 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

50 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

1

Not Qualified

e0

30

235

2SC4617G

Onsemi

NPN

SINGLE

YES

180 MHz

.125 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

BC857CTT1

Onsemi

PNP

SINGLE

YES

100 MHz

.125 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

420

150 Cel

SILICON

45 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

1

Not Qualified

e0

30

219

2SC4617T1

Onsemi

NPN

SINGLE

YES

180 MHz

.125 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

50 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

1

Not Qualified

e0

30

235

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395