.46 W Small Signal Bipolar Junction Transistors (BJT) 12

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

MMBT2222ALP4-7B

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.46 W

.6 A

PLASTIC/EPOXY

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

Other Transistors

40

150 Cel

SILICON

40 V

35 ns

285 ns

NICKEL PALLADIUM GOLD

BOTTOM

R-PBCC-N3

1

COLLECTOR

HIGH RELIABILITY

e4

30

260

AEC-Q101

BC807-25WT1G

Onsemi

PNP

SINGLE

YES

100 MHz

.46 W

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

160

150 Cel

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

SBC807-40WT1G

Onsemi

PNP

SINGLE

YES

100 MHz

.46 W

.5 A

1

Other Transistors

250

150 Cel

MATTE TIN

1

e3

30

260

BC807-40WT1G

Onsemi

PNP

SINGLE

YES

100 MHz

.46 W

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

250

150 Cel

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

NSS12100M3T5G

Onsemi

PNP

SINGLE

YES

.46 W

.001 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

80

150 Cel

SILICON

12 V

MATTE TIN

DUAL

R-PDSO-F3

1

Not Qualified

e3

30

260

NSS60200LT1G

Onsemi

PNP

SINGLE

YES

100 MHz

.46 W

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

60 V

530 ns

180 ns

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

40

260

SBC807-25T1G

Onsemi

PNP

SINGLE

YES

100 MHz

.46 W

.5 A

1

Other Transistors

160

150 Cel

BC807-25WT3G

Onsemi

PNP

SINGLE

YES

100 MHz

.46 W

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

160

150 Cel

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BC807-40WT3G

Onsemi

PNP

SINGLE

YES

100 MHz

.46 W

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

250

150 Cel

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

PDTD143ET-Q

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

225 MHz

.46 W

.5 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

175 Cel

7 pF

SILICON

50 V

-55 Cel

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTANCE RATIO IS 1

TO-236AB

AEC-Q101; IEC-60134

934663890215

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

225 MHz

.46 W

.5 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

175 Cel

7 pF

SILICON

50 V

-55 Cel

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTANCE RATIO IS 1

TO-236AB

AEC-Q101; IEC-60134

PDTD143ET-QR

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

225 MHz

.46 W

.5 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

175 Cel

7 pF

SILICON

50 V

-55 Cel

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTANCE RATIO IS 1

TO-236AB

AEC-Q101; IEC-60134

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395