.58 W Small Signal Bipolar Junction Transistors (BJT) 12

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PMD3001D,115

NXP Semiconductors

NPN AND PNP

COMMON BASE AND COMMON EMITTER, 2 ELEMENTS

YES

.58 W

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

300

150 Cel

SILICON

40 V

TIN

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

2N5551RUBG

STMicroelectronics

NPN

SINGLE

YES

.58 W

.5 A

UNSPECIFIED

AMPLIFIER

.2 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

30

200 Cel

6 pF

SILICON

160 V

DUAL

R-XDSO-N3

NOT SPECIFIED

NOT SPECIFIED

ESA/SCC 5201/019; RH - 100K Rad(Si)

SOC5551HRT

STMicroelectronics

NPN

SINGLE

YES

.58 W

.5 A

UNSPECIFIED

AMPLIFIER

.2 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

30

200 Cel

6 pF

SILICON

160 V

DUAL

R-XDSO-N3

NOT SPECIFIED

NOT SPECIFIED

ESA/SCC 5201/019

SOC5551HRB

STMicroelectronics

NPN

SINGLE

YES

.58 W

.5 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

200 Cel

SILICON

160 V

DUAL

R-CDSO-N3

Not Qualified

EUROPEAN PART NUMBER

NOT SPECIFIED

NOT SPECIFIED

SOC5551HRG

STMicroelectronics

NPN

SINGLE

YES

.58 W

.5 A

UNSPECIFIED

AMPLIFIER

.2 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

30

200 Cel

6 pF

SILICON

160 V

DUAL

R-XDSO-N3

ESA/SCC 5201/019

SOC55511

STMicroelectronics

NPN

SINGLE

YES

.58 W

.5 A

UNSPECIFIED

AMPLIFIER

.2 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

30

200 Cel

6 pF

SILICON

160 V

DUAL

R-XDSO-N3

NOT SPECIFIED

NOT SPECIFIED

2N5551RUBT

STMicroelectronics

NPN

SINGLE

YES

.58 W

.5 A

UNSPECIFIED

AMPLIFIER

.2 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

30

200 Cel

6 pF

SILICON

160 V

DUAL

R-XDSO-N3

NOT SPECIFIED

NOT SPECIFIED

ESA/SCC 5201/019; RH - 100K Rad(Si)

J2N5551UB1

STMicroelectronics

NPN

SINGLE

YES

.58 W

.5 A

UNSPECIFIED

AMPLIFIER

.2 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

30

200 Cel

6 pF

SILICON

160 V

DUAL

R-XDSO-N3

NOT SPECIFIED

NOT SPECIFIED

2N5551UBG

STMicroelectronics

NPN

SINGLE

YES

.58 W

.5 A

UNSPECIFIED

AMPLIFIER

.2 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

30

200 Cel

6 pF

SILICON

160 V

DUAL

R-XDSO-N3

ESA/SCC 5201/019; RH - 100K Rad(Si)

2N5551UBT

STMicroelectronics

NPN

SINGLE

YES

.58 W

.5 A

UNSPECIFIED

AMPLIFIER

.2 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

30

200 Cel

6 pF

SILICON

160 V

DUAL

R-XDSO-N3

NOT SPECIFIED

NOT SPECIFIED

ESA/SCC 5201/019

SOC5551RHRT

STMicroelectronics

NPN

SINGLE

YES

.58 W

.5 A

UNSPECIFIED

AMPLIFIER

.2 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

30

200 Cel

6 pF

SILICON

160 V

DUAL

R-XDSO-N3

NOT SPECIFIED

NOT SPECIFIED

ESA/SCC 5201/019; RH - 100K Rad(Si)

PMD3001D/DG,115

NXP Semiconductors

NPN AND PNP

YES

.58 W

1 A

BIP General Purpose Small Signal

250

150 Cel

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395