.63 W Small Signal Bipolar Junction Transistors (BJT) 13

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2N5401

Texas Instruments

PNP

SINGLE

NO

100 MHz

.63 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

150 Cel

SILICON

150 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

2N5401RL1

Onsemi

PNP

SINGLE

NO

100 MHz

.63 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

150 Cel

SILICON

150 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

235

2N5401RLRP

Onsemi

PNP

SINGLE

NO

100 MHz

.63 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

150 Cel

SILICON

150 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

2N5401G

Onsemi

PNP

SINGLE

NO

100 MHz

.63 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

150 Cel

SILICON

150 V

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

40

260

2N5401RLRA

Onsemi

PNP

SINGLE

NO

100 MHz

.63 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

150 Cel

SILICON

150 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

2N5401ZL1

Onsemi

PNP

SINGLE

NO

100 MHz

.63 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

150 Cel

SILICON

150 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

235

2N5401ZL1G

Onsemi

PNP

SINGLE

NO

100 MHz

.63 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

150 Cel

SILICON

150 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e1

260

2N5401RLRM

Onsemi

PNP

SINGLE

NO

100 MHz

.63 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

150 Cel

SILICON

150 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

FMBS2383

Onsemi

NPN

SINGLE

YES

120 MHz

.63 W

.8 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

80

150 Cel

SILICON

160 V

MATTE TIN

DUAL

R-PDSO-G6

1

MO-193AA

e3

30

260

2N5401RLRMG

Onsemi

PNP

SINGLE

NO

100 MHz

.63 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

150 Cel

SILICON

150 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

2N5401RL1G

Onsemi

PNP

SINGLE

NO

100 MHz

.63 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

150 Cel

SILICON

150 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e1

260

2N5401,412

NXP Semiconductors

PNP

SINGLE

NO

100 MHz

.63 W

.3 A

PLASTIC/EPOXY

SWITCHING

.5 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

150 Cel

6 pF

SILICON

150 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

2N5401,116

NXP Semiconductors

PNP

SINGLE

NO

100 MHz

.63 W

.3 A

PLASTIC/EPOXY

SWITCHING

.5 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

150 Cel

6 pF

SILICON

150 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395