.64 W Small Signal Bipolar Junction Transistors (BJT) 9

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

MMBT2222AM3T5G

Onsemi

NPN

SINGLE

YES

300 MHz

.64 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

40 V

35 ns

285 ns

MATTE TIN

DUAL

R-PDSO-F3

1

Not Qualified

e3

30

260

BC846BM3T5G

Onsemi

NPN

SINGLE

YES

100 MHz

.64 W

.1 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

65 V

MATTE TIN

DUAL

R-PDSO-F3

1

Not Qualified

e3

30

260

MMBT4401M3T5G

Onsemi

NPN

SINGLE

YES

250 MHz

.64 W

.6 A

PLASTIC/EPOXY

SWITCHING

.75 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

.64 W

100

150 Cel

6.5 pF

SILICON

40 V

35 ns

-55 Cel

255 ns

MATTE TIN

DUAL

R-PDSO-F3

1

Not Qualified

e3

30

260

NSVMMBT2907AM3T5G

Onsemi

PNP

SINGLE

YES

200 MHz

.64 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

1.6 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

50

150 Cel

8 pF

SILICON

60 V

45 ns

-55 Cel

100 ns

MATTE TIN

DUAL

R-PDSO-F3

1

e3

30

260

AEC-Q101

NSVMMBT2222AM3T5G

Onsemi

NPN

SINGLE

YES

300 MHz

.64 W

.6 A

PLASTIC/EPOXY

AMPLIFIER

1 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

75

150 Cel

8 pF

SILICON

40 V

35 ns

-55 Cel

285 ns

MATTE TIN

DUAL

R-PDSO-F3

1

e3

30

260

AEC-Q101

MMBT2907AM3T5G

Onsemi

PNP

SINGLE

YES

200 MHz

.64 W

.6 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

60 V

45 ns

100 ns

MATTE TIN

DUAL

R-PDSO-F3

1

Not Qualified

e3

30

260

MMBT4403M3T5G

Onsemi

NPN

SINGLE

YES

200 MHz

.64 W

.6 A

PLASTIC/EPOXY

SWITCHING

.75 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

.64 W

100

150 Cel

8.5 pF

SILICON

40 V

35 ns

-55 Cel

255 ns

MATTE TIN

DUAL

R-PDSO-F3

1

e3

30

260

BC856BM3T5G

Onsemi

PNP

SINGLE

YES

100 MHz

.64 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

220

150 Cel

SILICON

65 V

MATTE TIN

DUAL

R-PDSO-F3

1

Not Qualified

e3

30

260

NSVBC846BM3T5G

Onsemi

NPN

SINGLE

YES

100 MHz

.64 W

.1 A

1

Other Transistors

200

150 Cel

MATTE TIN

1

e3

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395