.73 W Small Signal Bipolar Junction Transistors (BJT) 33

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

SOC2907AHRT

STMicroelectronics

PNP

SINGLE

YES

.73 W

.5 A

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

200 Cel

SILICON

60 V

45 ns

300 ns

DUAL

R-XDSO-N3

EUROPEAN PART NUMBER

NOT SPECIFIED

NOT SPECIFIED

SOC2907ARHRTW

STMicroelectronics

PNP

SINGLE

YES

.73 W

.5 A

UNSPECIFIED

AMPLIFIER

.4 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.4 W

50

200 Cel

8 pF

SILICON

60 V

45 ns

-65 Cel

300 ns

DUAL

R-XDSO-N3

ESA/SCC 5202/001; RH - 100K Rad(Si)

SOC2222AUB11

STMicroelectronics

NPN

SINGLE

YES

.73 W

.8 A

1

Other Transistors

100

200 Cel

SILICON

40 V

SOC2222AHRB

STMicroelectronics

NPN

SINGLE

YES

.73 W

.8 A

CERAMIC, METAL-SEALED COFIRED

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

200 Cel

SILICON

40 V

35 ns

285 ns

GOLD

DUAL

R-CDSO-N3

Not Qualified

e4

SOC2222ASW

STMicroelectronics

NPN

SINGLE

YES

.73 W

.8 A

1

Other Transistors

100

200 Cel

2N2222AUB12

STMicroelectronics

NPN

SINGLE

YES

.73 W

.8 A

1

Other Transistors

100

200 Cel

2N2484UBT

STMicroelectronics

NPN

SINGLE

YES

.73 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

.35 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

250

200 Cel

6 pF

SILICON

60 V

-65 Cel

DUAL

R-PDSO-N3

HIGH RELIABILITY

2N2484UB1

STMicroelectronics

NPN

SINGLE

YES

.73 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

.35 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

250

200 Cel

6 pF

SILICON

60 V

-65 Cel

Gold (Au)

DUAL

R-PDSO-N3

Not Qualified

HIGH RELIABILITY

e4

SOC2907AHRG

STMicroelectronics

PNP

SINGLE

YES

.73 W

.5 A

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

200 Cel

SILICON

60 V

45 ns

300 ns

GOLD

DUAL

R-XDSO-N3

EUROPEAN PART NUMBER

e4

SOC2484HRG

STMicroelectronics

NPN

SINGLE

YES

.73 W

.5 A

UNSPECIFIED

.35 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

150

200 Cel

6 pF

SILICON

60 V

-65 Cel

DUAL

R-XDSO-N3

HIGH RELIABILITY

EUROPEAN SPACE AGENCY

2N2222AUB12SW

STMicroelectronics

NPN

SINGLE

YES

.73 W

.8 A

1

Other Transistors

100

200 Cel

5201/001/07

STMicroelectronics

NPN

SINGLE

YES

.73 W

.5 A

UNSPECIFIED

.35 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

150

200 Cel

6 pF

SILICON

60 V

-65 Cel

DUAL

R-XDSO-N3

HIGH RELIABILITY

EUROPEAN SPACE AGENCY

SOC2484HRB

STMicroelectronics

NPN

SINGLE

YES

.73 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

250

200 Cel

SILICON

60 V

GOLD

DUAL

R-PDSO-N3

Not Qualified

e4

SOC2907AHRB

STMicroelectronics

PNP

SINGLE

YES

.73 W

.5 A

CERAMIC, METAL-SEALED COFIRED

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

200 Cel

SILICON

60 V

45 ns

300 ns

DUAL

R-CDSO-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SOC2222AUB12

STMicroelectronics

NPN

SINGLE

YES

.73 W

.8 A

1

Other Transistors

100

200 Cel

SOC2907ARHRT

STMicroelectronics

PNP

SINGLE

YES

.73 W

.5 A

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

200 Cel

SILICON

60 V

45 ns

300 ns

DUAL

R-XDSO-N3

EUROPEAN PART NUMBER

NOT SPECIFIED

NOT SPECIFIED

5201/001/06

STMicroelectronics

NPN

SINGLE

YES

.73 W

.5 A

UNSPECIFIED

.35 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

150

200 Cel

6 pF

SILICON

60 V

-65 Cel

DUAL

R-XDSO-N3

HIGH RELIABILITY

EUROPEAN SPACE AGENCY

5201/001/04

STMicroelectronics

NPN

SINGLE

YES

.73 W

.5 A

UNSPECIFIED

.35 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

150

200 Cel

6 pF

SILICON

60 V

-65 Cel

DUAL

R-XDSO-N3

HIGH RELIABILITY

EUROPEAN SPACE AGENCY

SOC2484HRT

STMicroelectronics

NPN

SINGLE

YES

.73 W

.5 A

UNSPECIFIED

.35 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

150

200 Cel

6 pF

SILICON

60 V

-65 Cel

DUAL

R-XDSO-N3

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

EUROPEAN SPACE AGENCY

5202/001/07

STMicroelectronics

PNP

SINGLE

YES

.73 W

.5 A

UNSPECIFIED

1.6 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

50

200 Cel

8 pF

SILICON

60 V

45 ns

300 ns

DUAL

R-XDSO-N3

HIGH RELIABILITY

EUROPEAN SPACE AGENCY

SOC2907ARHRG

STMicroelectronics

PNP

SINGLE

YES

.73 W

.5 A

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

200 Cel

SILICON

60 V

45 ns

300 ns

GOLD

DUAL

R-XDSO-N3

EUROPEAN PART NUMBER

e4

5201/001/05

STMicroelectronics

NPN

SINGLE

YES

.73 W

.5 A

UNSPECIFIED

.35 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

150

200 Cel

6 pF

SILICON

60 V

-65 Cel

DUAL

R-XDSO-N3

HIGH RELIABILITY

EUROPEAN SPACE AGENCY

2N2484UBG

STMicroelectronics

NPN

SINGLE

YES

.73 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

.35 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

250

200 Cel

6 pF

SILICON

60 V

-65 Cel

DUAL

R-PDSO-N3

HIGH RELIABILITY

5202/001/07R

STMicroelectronics

PNP

SINGLE

YES

.73 W

.5 A

UNSPECIFIED

1.6 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

50

200 Cel

8 pF

SILICON

60 V

45 ns

300 ns

DUAL

R-XDSO-N3

HIGH RELIABILITY

EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)

2N2222AUB11SW

STMicroelectronics

NPN

SINGLE

YES

.73 W

.8 A

1

Other Transistors

100

200 Cel

2N2222AUBSW

STMicroelectronics

NPN

SINGLE

YES

.73 W

.8 A

1

Other Transistors

100

200 Cel

2N2222AUB11

STMicroelectronics

NPN

SINGLE

YES

.73 W

.8 A

1

Other Transistors

100

200 Cel

2N2907AUBG

STMicroelectronics

PNP

SINGLE

YES

.73 W

.5 A

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

200 Cel

SILICON

60 V

45 ns

300 ns

GOLD

DUAL

R-XDSO-N3

e4

2N2907AUBT

STMicroelectronics

PNP

SINGLE

YES

.73 W

.5 A

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

200 Cel

SILICON

60 V

45 ns

300 ns

DUAL

R-XDSO-N3

NOT SPECIFIED

NOT SPECIFIED

2N2907ARUBG

STMicroelectronics

PNP

SINGLE

YES

.73 W

.5 A

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

200 Cel

SILICON

60 V

45 ns

300 ns

GOLD

DUAL

R-XDSO-N3

e4

2N2907ARUBTW

STMicroelectronics

PNP

SINGLE

YES

.73 W

.5 A

UNSPECIFIED

AMPLIFIER

.4 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.4 W

50

200 Cel

8 pF

SILICON

60 V

45 ns

-65 Cel

300 ns

DUAL

R-XDSO-N3

ESA/SCC 5202/001; RH - 100K Rad(Si)

2N2907ARUBT

STMicroelectronics

PNP

SINGLE

YES

.73 W

.5 A

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

200 Cel

SILICON

60 V

45 ns

300 ns

DUAL

R-XDSO-N3

NOT SPECIFIED

NOT SPECIFIED

ZXTN4240F-7

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

.73 W

2 A

PLASTIC/EPOXY

SWITCHING

.32 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

150

150 Cel

20 pF

SILICON

40 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395