1.4 W Small Signal Bipolar Junction Transistors (BJT) 23

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

NSS40601CF8T1G

Onsemi

NPN

SINGLE

YES

140 MHz

1.4 W

6 A

PLASTIC/EPOXY

SWITCHING

C BEND

RECTANGULAR

1

8

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

40 V

240 ns

1530 ns

MATTE TIN

DUAL

R-PDSO-C8

1

Not Qualified

e3

30

260

BCP69-16,115

NXP Semiconductors

PNP

SINGLE

YES

40 MHz

1.4 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

20 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

BCP69-25,135

NXP Semiconductors

PNP

SINGLE

YES

40 MHz

1.4 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

160

150 Cel

SILICON

20 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

PBSS8110Z,135

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

1.4 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

100 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

PBHV8540Z,115

NXP Semiconductors

NPN

SINGLE

YES

30 MHz

1.4 W

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

80

150 Cel

SILICON

400 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

PBSS8110Z

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

1.4 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

100 V

Tin (Sn)

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

BCP69-16T/R

NXP Semiconductors

PNP

SINGLE

YES

40 MHz

1.4 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

20 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

PBSS9110Z,135

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

1.4 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

100 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

NSS20601CF8T1G

Onsemi

NPN

SINGLE

YES

140 MHz

1.4 W

6 A

PLASTIC/EPOXY

SWITCHING

C BEND

RECTANGULAR

1

8

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

20 V

240 ns

980 ns

MATTE TIN

DUAL

R-PDSO-C8

1

Not Qualified

e3

30

260

NSS20600CF8T1G

Onsemi

PNP

SINGLE

YES

100 MHz

1.4 W

6 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

8

SMALL OUTLINE

Other Transistors

180

150 Cel

SILICON

20 V

370 ns

650 ns

TIN

DUAL

R-PDSO-N8

1

Not Qualified

e3

30

260

NSS12601CF8T1G

Onsemi

NPN

SINGLE

YES

140 MHz

1.4 W

6 A

PLASTIC/EPOXY

SWITCHING

C BEND

RECTANGULAR

1

8

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

12 V

250 ns

690 ns

MATTE TIN

DUAL

R-PDSO-C8

1

Not Qualified

e3

30

260

BCP69-16/IN

NXP Semiconductors

PNP

SINGLE

YES

40 MHz

1.4 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

20 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

IEC-60134

BCP69-16/DG

NXP Semiconductors

PNP

SINGLE

YES

140 MHz

1.4 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

20 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

IEC-60134

BCP69-25/T3

NXP Semiconductors

PNP

SINGLE

YES

40 MHz

1.4 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

160

150 Cel

SILICON

20 V

TIN

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

e3

PBHV9040Z,115

NXP Semiconductors

PNP

SINGLE

YES

55 MHz

1.4 W

.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

80

150 Cel

SILICON

400 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

PBHV8115Z

NXP Semiconductors

NPN

SINGLE

YES

30 MHz

1.4 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

10

150 Cel

SILICON

150 V

Tin (Sn)

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

PBHV9050Z,115

NXP Semiconductors

PNP

SINGLE

YES

50 MHz

1.4 W

.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

70

150 Cel

SILICON

500 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

PBHV9040Z

NXP Semiconductors

PNP

SINGLE

YES

55 MHz

1.4 W

.25 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

80

150 Cel

SILICON

400 V

Tin (Sn)

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

PBHV9115Z,115

NXP Semiconductors

PNP

SINGLE

YES

115 MHz

1.4 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

150 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

PBSS9110Z

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

1.4 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

125

150 Cel

SILICON

100 V

Tin (Sn)

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

PBHV9115Z

NXP Semiconductors

PNP

SINGLE

YES

115 MHz

1.4 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

150 V

Tin (Sn)

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

PBHV8115Z,115

NXP Semiconductors

NPN

SINGLE

YES

30 MHz

1.4 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

10

150 Cel

SILICON

150 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

PBHV8540Z

NXP Semiconductors

NPN

SINGLE

YES

30 MHz

1.4 W

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

80

150 Cel

SILICON

400 V

Tin (Sn)

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395