2.5 W Small Signal Bipolar Junction Transistors (BJT) 58

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PBSS304PD,115

NXP Semiconductors

PNP

SINGLE

YES

110 MHz

2.5 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

155

150 Cel

SILICON

80 V

90 ns

312 ns

TIN

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

PBSS4420D,115

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

2.5 W

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

300

150 Cel

SILICON

20 V

TIN

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

PBSS5520X

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

2.5 W

5 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

20 V

Tin (Sn)

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

TO-243AA

e3

30

260

PBSS304ND,115

NXP Semiconductors

NPN

SINGLE

YES

140 MHz

2.5 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

25

150 Cel

SILICON

80 V

180 ns

583 ns

TIN

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

PBSS4032NX,120

Nexperia

NPN

SINGLE

YES

145 MHz

2.5 W

4.7 A

PLASTIC/EPOXY

SWITCHING

.34 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

150

150 Cel

65 pF

SILICON

30 V

-55 Cel

SINGLE

R-PSSO-F3

COLLECTOR

AEC-Q101; IEC-60134

PBSS4032NX,135

Nexperia

NPN

SINGLE

YES

145 MHz

2.5 W

4.7 A

PLASTIC/EPOXY

SWITCHING

.34 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

150

150 Cel

65 pF

SILICON

30 V

-55 Cel

SINGLE

R-PSSO-F3

COLLECTOR

AEC-Q101; IEC-60134

2SC5712

Toshiba

PNP

SINGLE

YES

2.5 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

50 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SA2059

Toshiba

PNP

SINGLE

YES

2.5 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

20 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SC5714

Toshiba

NPN

SINGLE

YES

2.5 W

4 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

20 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SA2060

Toshiba

PNP

SINGLE

YES

2.5 W

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

50 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395