2.75 W Small Signal Bipolar Junction Transistors (BJT) 7

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

SMMJT350T1G

Onsemi

PNP

SINGLE

YES

2.75 W

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

300 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

TO-261AA

e3

30

260

AEC-Q101

NSS35200CF8T1G

Onsemi

PNP

SINGLE

YES

100 MHz

2.75 W

2 A

PLASTIC/EPOXY

SWITCHING

C BEND

RECTANGULAR

1

8

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

35 V

MATTE TIN

DUAL

R-PDSO-C8

1

Not Qualified

e3

30

260

MMJT350T1

Onsemi

PNP

SINGLE

YES

2.75 W

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

300 V

TIN LEAD

DUAL

R-PDSO-G4

3

COLLECTOR

Not Qualified

TO-261AA

e0

235

SMMJT350T3G

Onsemi

PNP

SINGLE

YES

2.75 W

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

20

150 Cel

SILICON

300 V

-55 Cel

DUAL

R-PDSO-G4

COLLECTOR

TO-261AA

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

MMJT350T1G

Onsemi

PNP

SINGLE

YES

2.75 W

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

300 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

TO-261AA

e3

30

260

NSS40600CF8T1G

Onsemi

PNP

SINGLE

YES

100 MHz

2.75 W

6 A

PLASTIC/EPOXY

SWITCHING

C BEND

RECTANGULAR

1

8

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

40 V

340 ns

890 ns

MATTE TIN

DUAL

R-PDSO-C8

1

Not Qualified

e3

30

260

NSS12600CF8T1G

Onsemi

PNP

SINGLE

YES

100 MHz

2.75 W

5 A

PLASTIC/EPOXY

SWITCHING

C BEND

RECTANGULAR

1

8

SMALL OUTLINE

Other Transistors

180

150 Cel

SILICON

12 V

350 ns

590 ns

Tin (Sn)

DUAL

R-PDSO-C8

1

Not Qualified

e3

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395