2.8 W Small Signal Bipolar Junction Transistors (BJT) 7

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

FCX605TA

Diodes Incorporated

NPN

DARLINGTON

YES

150 MHz

2.8 W

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

2000

150 Cel

SILICON

120 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

260

DXT458P5-13

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

2.8 W

.3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

15

150 Cel

SILICON

400 V

MATTE TIN

DUAL

R-PDSO-F3

1

Not Qualified

TO-252

e3

30

260

STX13005-AP

STMicroelectronics

NPN

SINGLE

NO

2.8 W

3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

8

150 Cel

SILICON

400 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

STX13005

STMicroelectronics

NPN

SINGLE

NO

2.8 W

3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

8

150 Cel

SILICON

400 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

STX1F10

STMicroelectronics

NPN

SINGLE

NO

2.8 W

1.5 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

14

150 Cel

SILICON

400 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

e3

DXTP560BP5-13

Diodes Incorporated

PNP

SINGLE

YES

60 MHz

2.8 W

.15 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

80

150 Cel

SILICON

500 V

MATTE TIN

DUAL

R-PDSO-F3

1

COLLECTOR

HIGH RELIABILITY

e3

30

260

FCX705TA

Diodes Incorporated

PNP

DARLINGTON

YES

160 MHz

2.8 W

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

2000

150 Cel

SILICON

120 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395