3.2 W Small Signal Bipolar Junction Transistors (BJT) 10

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

DXT2011P5-13

Diodes Incorporated

NPN

SINGLE

YES

130 MHz

3.2 W

6 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

10

150 Cel

SILICON

100 V

MATTE TIN

DUAL

R-PDSO-F3

1

Not Qualified

TO-252

e3

30

260

DXT2010P5-13

Diodes Incorporated

NPN

SINGLE

YES

130 MHz

3.2 W

6 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-F3

1

COLLECTOR

Not Qualified

TO-252

e3

30

260

DXTP03200BP5-13

Diodes Incorporated

PNP

SINGLE

YES

105 MHz

3.2 W

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

200 V

MATTE TIN

DUAL

R-PDSO-F3

1

Not Qualified

TO-252

e3

30

260

DXT2012P5-13

Diodes Incorporated

PNP

SINGLE

YES

120 MHz

3.2 W

5.5 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-F3

1

Not Qualified

TO-252

e3

30

260

DXT2014P5-13

Diodes Incorporated

PNP

SINGLE

YES

120 MHz

3.2 W

4 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

45

150 Cel

SILICON

140 V

MATTE TIN

DUAL

R-PDSO-F3

1

COLLECTOR

Not Qualified

TO-252

e3

30

260

DXT2013P5-13

Diodes Incorporated

PNP

SINGLE

YES

125 MHz

3.2 W

5 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

15

150 Cel

SILICON

100 V

MATTE TIN

DUAL

R-PDSO-F3

1

COLLECTOR

Not Qualified

TO-252

e3

30

260

DXT690BP5-13

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

3.2 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

60

150 Cel

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-F3

1

COLLECTOR

Not Qualified

TO-252

e3

30

260

DXT790AP5-13

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

3.2 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

80

150 Cel

SILICON

40 V

MATTE TIN

DUAL

R-PDSO-F3

1

COLLECTOR

Not Qualified

TO-252

e3

30

260

DXTN07100BP5-13

Diodes Incorporated

NPN

SINGLE

YES

175 MHz

3.2 W

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

25

150 Cel

SILICON

100 V

MATTE TIN

DUAL

R-PDSO-F3

1

Not Qualified

TO-252

e3

30

260

DXTN07100BP5Q-13

Diodes Incorporated

NPN

SINGLE

YES

175 MHz

3.2 W

2 A

PLASTIC/EPOXY

SWITCHING

.5 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

25

150 Cel

30 pF

SILICON

100 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-F3

1

COLLECTOR

HIGH RELIABILITY

e3

260

AEC-Q101

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395