145 MHz Small Signal Bipolar Junction Transistors (BJT) 120

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BCX51-10F

Nexperia

PNP

SINGLE

YES

145 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

63

SILICON

45 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

AEC-Q101; IEC-60134

BCP52-16/A

Nexperia

PNP

SINGLE

YES

145 MHz

1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

63

SILICON

60 V

DUAL

S-PDSO-N3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101; IEC-60134

PBSS4032NX,135

Nexperia

NPN

SINGLE

YES

145 MHz

2.5 W

4.7 A

PLASTIC/EPOXY

SWITCHING

.34 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

150

150 Cel

65 pF

SILICON

30 V

-55 Cel

SINGLE

R-PSSO-F3

COLLECTOR

AEC-Q101; IEC-60134

BC51-10PA

Nexperia

PNP

SINGLE

YES

145 MHz

1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

63

SILICON

45 V

TIN

DUAL

S-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BCP52-16,135

Nexperia

PNP

SINGLE

YES

145 MHz

1.35 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

100

150 Cel

SILICON

60 V

-55 Cel

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BCP51,135

Nexperia

PNP

SINGLE

YES

145 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

63

SILICON

45 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC51-16PASX

Nexperia

PNP

SINGLE

YES

145 MHz

1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

100

SILICON

45 V

TIN

DUAL

S-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BCP52-10,115

Nexperia

PNP

SINGLE

YES

145 MHz

1.35 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

63

150 Cel

SILICON

60 V

-55 Cel

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC51-10PASX

Nexperia

PNP

SINGLE

YES

145 MHz

1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

1

3

SMALL OUTLINE

63

SILICON

45 V

TIN

DUAL

S-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BCP51-10,115

Nexperia

PNP

SINGLE

YES

145 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

63

SILICON

45 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

DZT751-13

Diodes Incorporated

PNP

SINGLE

YES

145 MHz

2 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

ZXT11N15DFTC

Diodes Incorporated

NPN

SINGLE

YES

145 MHz

.806 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

15 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

ZTX1151ASTZ

Diodes Incorporated

PNP

SINGLE

NO

145 MHz

1 W

3 A

PLASTIC/EPOXY

.24 V

WIRE

RECTANGULAR

1

3

IN-LINE

1 W

100

200 Cel

40 pF

SILICON

40 V

-55 Cel

SINGLE

R-PSIP-W3

UZTX1151A

Diodes Incorporated

PNP

SINGLE

NO

145 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

40 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

10

260

FCX1151A

Diodes Incorporated

PNP

SINGLE

YES

145 MHz

1 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

40 V

Matte Tin (Sn)

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

DXT751Q-13

Diodes Incorporated

PNP

SINGLE

YES

145 MHz

3 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

60 V

MATTE TIN

SINGLE

R-PSSO-F3

COLLECTOR

HIGH RELIABILITY

e3

30

260

AEC-Q101

ZXT11N15DFTA

Diodes Incorporated

NPN

SINGLE

YES

145 MHz

.806 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

15 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

ZTX1151ASTOB

Diodes Incorporated

PNP

SINGLE

NO

145 MHz

1 W

3 A

PLASTIC/EPOXY

.24 V

WIRE

RECTANGULAR

1

3

IN-LINE

1 W

100

200 Cel

40 pF

SILICON

40 V

-55 Cel

SINGLE

R-PSIP-W3

UZXT11N15DFTA

Diodes Incorporated

NPN

SINGLE

YES

145 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

150

150 Cel

SILICON

15 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

40

260

UFCX1151A

Diodes Incorporated

PNP

SINGLE

YES

145 MHz

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

40 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

40

260

UZXT11N15DFTC

Diodes Incorporated

NPN

SINGLE

YES

145 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

150

150 Cel

SILICON

15 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

40

260

ZTX1151ASTOA

Diodes Incorporated

PNP

SINGLE

NO

145 MHz

1 W

3 A

PLASTIC/EPOXY

.24 V

WIRE

RECTANGULAR

1

3

IN-LINE

1 W

100

200 Cel

40 pF

SILICON

40 V

-55 Cel

SINGLE

R-PSIP-W3

DXT751-13

Diodes Incorporated

PNP

SINGLE

YES

145 MHz

1 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

60 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

ZTX1151A

Diodes Incorporated

PNP

SINGLE

NO

145 MHz

1 W

3 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

Other Transistors

100

200 Cel

SILICON

40 V

SINGLE

R-PSIP-W3

Not Qualified

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395