175 MHz Small Signal Bipolar Junction Transistors (BJT) 113

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

DXTN07100BP5Q-13

Diodes Incorporated

NPN

SINGLE

YES

175 MHz

3.2 W

2 A

PLASTIC/EPOXY

SWITCHING

.5 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

25

150 Cel

30 pF

SILICON

100 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-F3

1

COLLECTOR

HIGH RELIABILITY

e3

260

AEC-Q101

DSS45160FDB-7

Diodes Incorporated

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

175 MHz

1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

SQUARE

2

6

SMALL OUTLINE

70

SILICON

60 V

NICKEL PALLADIUM GOLD

DUAL

S-PDSO-N6

COLLECTOR

e4

260

ZTX650M1

Diodes Incorporated

NPN

SINGLE

YES

175 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

45 V

SINGLE

R-PSSO-G3

Not Qualified

CECC

ZTX650K

Diodes Incorporated

NPN

SINGLE

NO

175 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

45 V

SINGLE

R-PSIP-W3

Not Qualified

CECC

ZTX651L

Diodes Incorporated

NPN

SINGLE

NO

175 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

60 V

Matte Tin (Sn)

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

ZTX650

Diodes Incorporated

NPN

SINGLE

NO

175 MHz

2 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

SILICON

45 V

SINGLE

R-PSIP-W3

Not Qualified

ZTX650L

Diodes Incorporated

NPN

SINGLE

NO

175 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

45 V

SINGLE

R-PSIP-W3

Not Qualified

CECC

ZTX650Q

Diodes Incorporated

NPN

SINGLE

NO

175 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

45 V

SINGLE

R-PSIP-W3

Not Qualified

CECC

BCM857BV-7

Diodes Incorporated

PNP

SEPARATE, 2 ELEMENTS

YES

175 MHz

.1 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

200

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-F6

HIGH RELIABILITY

e3

260

AEC-Q101

ZTX652Q

Diodes Incorporated

NPN

SINGLE

NO

175 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

25

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

CECC

ZTX652K

Diodes Incorporated

NPN

SINGLE

NO

175 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

25

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

CECC

ZTX652L

Diodes Incorporated

NPN

SINGLE

NO

175 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

25

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

CECC

ZTX652

Diodes Incorporated

NPN

SINGLE

NO

175 MHz

2 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

ZTX653L

Diodes Incorporated

NPN

SINGLE

NO

175 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

25

SILICON

100 V

Matte Tin (Sn)

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

ZTX652M1

Diodes Incorporated

NPN

SINGLE

YES

175 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

CECC

ZTX651K

Diodes Incorporated

NPN

SINGLE

NO

175 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

60 V

Matte Tin (Sn)

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

ZTX653K

Diodes Incorporated

NPN

SINGLE

NO

175 MHz

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

25

SILICON

100 V

Matte Tin (Sn)

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395