20 MHz Small Signal Bipolar Junction Transistors (BJT) 24

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

CMPTA96TR

Central Semiconductor

PNP

SINGLE

YES

20 MHz

.35 W

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

50

150 Cel

SILICON

450 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

Not Qualified

e0

PMBTA44,215

NXP Semiconductors

NPN

SINGLE

YES

20 MHz

.25 W

.3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

400 V

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

2N338

Texas Instruments

NPN

SINGLE

NO

20 MHz

.125 W

.02 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

45

150 Cel

SILICON

30 V

50 ns

100 ns

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N2432A

Texas Instruments

NPN

SINGLE

NO

20 MHz

.3 W

.1 A

METAL

CHOPPER

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

200 Cel

SILICON

45 V

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

2N2432

Texas Instruments

NPN

SINGLE

NO

20 MHz

.3 W

.1 A

METAL

CHOPPER

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

175 Cel

SILICON

30 V

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

2N4138

Texas Instruments

NPN

SINGLE

NO

20 MHz

.3 W

.1 A

METAL

CHOPPER

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

175 Cel

SILICON

30 V

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-46

NOT SPECIFIED

NOT SPECIFIED

MPSA44

Onsemi

NPN

SINGLE

NO

20 MHz

.625 W

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

400 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

30

235

MPSA44RL1

Onsemi

NPN

SINGLE

NO

20 MHz

.625 W

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

400 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

235

MPSA44RLRAG

Onsemi

NPN

SINGLE

NO

20 MHz

.625 W

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

400 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

MPSA44G

Onsemi

NPN

SINGLE

NO

20 MHz

.625 W

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

400 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

CPH3249A

Onsemi

NPN

SINGLE

YES

20 MHz

.9 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

10

150 Cel

SILICON

8 V

DUAL

R-PDSO-G3

Not Qualified

MPSA44RLRA

Onsemi

NPN

SINGLE

NO

20 MHz

.625 W

.3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

400 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

2SC6083A

Onsemi

NPN

SINGLE

NO

20 MHz

1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

10

SILICON

400 V

1000 ns

2800 ns

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

SINGLE

R-PSIP-T3

Not Qualified

e2

2SC6083

Onsemi

NPN

SINGLE

NO

20 MHz

1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

10

SILICON

350 V

1000 ns

2800 ns

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

SINGLE

R-PSIP-T3

Not Qualified

e2

SOC37001

STMicroelectronics

NPN

SINGLE

YES

20 MHz

1 A

UNSPECIFIED

.5 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

50

200 Cel

12 pF

SILICON

80 V

DUAL

R-XDSO-N3

EUROPEAN SPACE AGENCY

MPSA45

NXP Semiconductors

NPN

SINGLE

NO

20 MHz

.3 A

PLASTIC/EPOXY

SWITCHING

.75 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

50

150 Cel

7 pF

SILICON

350 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

934025870126

NXP Semiconductors

NPN

SINGLE

NO

20 MHz

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

40

SILICON

400 V

TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

MPSA44-AMMO

NXP Semiconductors

NPN

SINGLE

NO

20 MHz

.3 A

PLASTIC/EPOXY

.75 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

40

150 Cel

7 pF

SILICON

400 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

934061413215

NXP Semiconductors

NPN

SINGLE

YES

20 MHz

.3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

400 V

DUAL

R-PDSO-G3

TO-236AB

934025870112

NXP Semiconductors

NPN

SINGLE

NO

20 MHz

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

40

SILICON

400 V

TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

MPSA45-T/R

NXP Semiconductors

NPN

SINGLE

NO

20 MHz

.3 A

PLASTIC/EPOXY

SWITCHING

.75 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

50

150 Cel

7 pF

SILICON

350 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

MPSA44-T/R

NXP Semiconductors

NPN

SINGLE

NO

20 MHz

.625 W

.3 A

PLASTIC/EPOXY

SWITCHING

.75 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

150 Cel

7 pF

SILICON

400 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

MPSA45-AMMO

NXP Semiconductors

NPN

SINGLE

NO

20 MHz

.3 A

PLASTIC/EPOXY

.75 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

40

150 Cel

7 pF

SILICON

350 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

PMBTA44

NXP Semiconductors

NPN

SINGLE

YES

20 MHz

.25 W

.3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

400 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395