300 MHz Small Signal Bipolar Junction Transistors (BJT) 1,725

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

AC847BWQ-13

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

260

AEC-Q101

BC548PSTZ

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

75

SILICON

30 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

ZUMT850C

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

BCV72RTA

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

60 V

DUAL

R-PDSO-G3

Not Qualified

AC847CQ-7

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.31 W

.1 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

150 Cel

3 pF

SILICON

45 V

-65 Cel

MATTE TIN

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

260

AEC-Q101

BC548A(BOX)

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

PLASTIC/EPOXY

.6 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

110

150 Cel

6 pF

SILICON

30 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BC549PSTZ

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

.2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

200

SILICON

30 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

LOW NOISE

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

FXT3904SM

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

40 V

70 ns

250 ns

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BCW72RTA

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

BC548C(AMMOPAK)

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

PLASTIC/EPOXY

.6 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

420

150 Cel

6 pF

SILICON

30 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

ZUMT850CTC

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

BC546PSTOA

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

75

SILICON

65 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

IMBT2222A

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.31 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

40 V

TIN LEAD

DUAL

R-PDSO-G3

TO-236

e0

ZUMT850BTA

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

ZUMT850B

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

FXT3904STOE

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

100

SILICON

40 V

70 ns

250 ns

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

2N3904M1TA

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

40 V

70 ns

250 ns

SINGLE

R-PSSO-G3

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

BC109PQ

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

180

SILICON

20 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

LOW NOISE

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

BC547PK

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

75

SILICON

45 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

FXT2222ASM

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

40 V

35 ns

285 ns

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BC547C(AMMOPAK)

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

PLASTIC/EPOXY

.6 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

420

150 Cel

6 pF

SILICON

45 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BC109PSTOA

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

180

SILICON

20 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

LOW NOISE

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

BCW71TA

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

110

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

CECC

MPS2222ASTOA

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

.8 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

40 V

35 ns

285 ns

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

AC847BQ-7

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.31 W

.1 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

150 Cel

3 pF

SILICON

45 V

-65 Cel

MATTE TIN

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

260

AEC-Q101

MPS2222ASMTC

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

40 V

35 ns

285 ns

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BC860BTC

Diodes Incorporated

PNP

SINGLE

YES

300 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

220

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

BC547PM1TA

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

75

SILICON

45 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CECC

BC548PSTOB

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

75

SILICON

30 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

BC546PM1TC

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

75

SILICON

65 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CECC

FXT2222ASTOB

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

.8 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

40 V

35 ns

285 ns

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

BCV72TC

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

60 V

DUAL

R-PDSO-G3

Not Qualified

CECC

BC548PM1TA

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

75

SILICON

30 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CECC

BC546PK

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

75

SILICON

65 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

BC547PSTZ

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

75

SILICON

45 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

ZUMT848BTA

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

FXT3904SMTC

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

40 V

70 ns

250 ns

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BC548PL

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

75

SILICON

30 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

BC546PSTZ

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

75

SILICON

65 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

BC546PSTOB

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

75

SILICON

65 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

BCW71RTC

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

110

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

BC549PM1TA

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

30 V

SINGLE

R-PSSO-G3

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

CECC

BCW72TC

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

CECC

BC860ATA

Diodes Incorporated

PNP

SINGLE

YES

300 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

125

SILICON

45 V

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

FXT2222ASTZ

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

.8 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

40 V

35 ns

285 ns

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UMPS2222A

Diodes Incorporated

NPN

SINGLE

NO

300 MHz

.8 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

50

175 Cel

SILICON

40 V

35 ns

285 ns

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CECC

ZUMT848BTC

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

AC847CWQ-7

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

260

AEC-Q101

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395