340 MHz Small Signal Bipolar Junction Transistors (BJT) 12

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SAR554P5T100

ROHM

PNP

SINGLE

YES

340 MHz

2 W

1.5 A

PLASTIC/EPOXY

SWITCHING

.4 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

120

150 Cel

15 pF

SILICON

80 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

e3

10

260

MPS6522

Vishay Intertechnology

PNP

SINGLE

NO

340 MHz

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

200

SILICON

25 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

MPS6521RLRAG

Onsemi

NPN

SINGLE

NO

340 MHz

.625 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

300

150 Cel

SILICON

25 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e1

260

MPS6523RLRM

Onsemi

PNP

SINGLE

NO

340 MHz

.625 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

300

150 Cel

SILICON

25 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

235

MPS6521G

Onsemi

NPN

SINGLE

NO

340 MHz

.625 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

300

150 Cel

SILICON

25 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e1

260

MPS6523G

Onsemi

PNP

SINGLE

NO

340 MHz

.625 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

300

150 Cel

SILICON

25 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e1

260

MPS6523

Onsemi

PNP

SINGLE

NO

340 MHz

.625 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

300

150 Cel

SILICON

25 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

235

MPS6521RLRA

Onsemi

NPN

SINGLE

NO

340 MHz

.625 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

300

150 Cel

SILICON

25 V

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

30

235

DSS3515M-7B

Diodes Incorporated

PNP

SINGLE

YES

340 MHz

.25 W

.5 A

PLASTIC/EPOXY

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

Other Transistors

90

150 Cel

SILICON

15 V

Nickel/Palladium/Gold (Ni/Pd/Au)

BOTTOM

R-PBCC-N3

1

COLLECTOR

Not Qualified

e4

30

260

DST857BDJ-7

Diodes Incorporated

PNP

SEPARATE, 2 ELEMENTS

YES

340 MHz

.3 W

.1 A

PLASTIC/EPOXY

FLAT

SQUARE

2

6

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

45 V

MATTE TIN

DUAL

S-PDSO-F6

1

Not Qualified

e3

30

260

DSS3515M-7

Diodes Incorporated

PNP

SINGLE

YES

340 MHz

.25 W

.5 A

PLASTIC/EPOXY

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

Other Transistors

90

150 Cel

SILICON

15 V

Nickel/Palladium/Gold (Ni/Pd/Au)

BOTTOM

R-PBCC-N3

1

COLLECTOR

Not Qualified

e4

30

260

BC857BFA-7B

Diodes Incorporated

PNP

SINGLE

YES

340 MHz

.435 W

.1 A

PLASTIC/EPOXY

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

45 V

NICKEL PALLADIUM GOLD

SINGLE

R-PSSO-N3

1

COLLECTOR

HIGH RELIABILITY

e4

30

260

AEC-Q101

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395