400 MHz Small Signal Bipolar Junction Transistors (BJT) 223

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  2. Small Signal Bipolar Junction Transistors (BJT)
Manufacturers
    • Allegro MicroSystems
    • Analog Devices
    • Bytesonic Electronics
    • Central Semiconductor
    • Changzhou Galaxy Century Microelectronics
    • Comchip Technology
    • Continental Device India
    • Defense Logistics Agency
    • Digitron Semiconductors
    • Diodes Incorporated
    • Diotec Semiconductor Ag
    • Fairchild Semiconductor
    • Harris Semiconductor
    • Ik Semicon
    • Infineon Technologies
    • Intersil
    • Kec
    • Leshan Radio
    • Micro Commercial Components
    • Micro Electronics
    • Micro Power Systems
    • Microchip Technology
    • Micropac Industries
    • Microsemi
    • Mitsubishi Electric
    • Motorola
    • Multicomp Pro
    • NXP Semiconductors
    • National Semiconductor
    • New Jersey Semiconductor Products
    • Nexperia
    • Nte Electronics
    • Onsemi
    • Panasonic
    • Panjit International
    • Philips Semiconductors
    • ROHM
    • Rectron
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Secos
    • Semiconductors
    • Sharp Corporation
    • TDK
    • Taiwan Semiconductor
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Vishay Intertechnology
    • Vpt Components
    • Yangzhou Yangjie Electronics
    • Zetex Plc
Polarity or Channel Type
    • N-CHANNEL
    • NPN
    • NPN AND PNP
    • PNP
Configuration
    • 2 BANKS, COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
    • 2 BANKS, DARLINGTON
    • 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
    • 7 BANKS, DARLINGTON WITH BUILT-IN RESISTOR
    • 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
    • CASCADED, 2 ELEMENTS
    • CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
    • COMMON BASE AND COMMON EMITTER, 2 ELEMENTS
    • COMMON BASE, 2 ELEMENTS
    • COMMON BASE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    • COMMON COLLECTOR, 2 ELEMENTS
    • COMMON COLLECTOR, 7 ELEMENTS
    • COMMON COLLECTOR, 7 ELEMENTS WITH BUILT-IN DIODE
    • COMMON COLLECTOR, 7 ELEMENTS WITH BUILT-IN RESISTOR
    • COMMON EMITTER, 2 ELEMENTS
    • COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
    • COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
    • COMMON EMITTER, 4 ELEMENTS
    • COMMON EMITTER, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
    • COMMON EMITTER, 7 ELEMENTS
    • COMMON EMITTER, 7 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
    • COMMON EMITTER, 7 ELEMENTS WITH BUILT-IN RESISTOR
    • COMMON EMITTER, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
    • COMMON EMITTER, 8 ELEMENTS WITH BUILT-IN RESISTOR
    • COMMON SUBSTRATE, 2 ELEMENTS
    • COMPLEX
    • CURRENT MIRROR
    • DARLINGTON
    • DARLINGTON WITH BUILT-IN DIODE
    • DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
    • DARLINGTON WITH BUILT-IN RESISTOR
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    • SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
    • SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    • SEPARATE, 4 ELEMENTS
    • SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
    • SEPARATE, 5 ELEMENTS
    • SEPARATE, 8 ELEMENTS
    • SEPARATE, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN DIODE AND RESISTOR
    • SINGLE WITH BUILT-IN FET
    • SINGLE WITH BUILT-IN FET AND DIODE
    • SINGLE WITH BUILT-IN FET AND DIODE AND RESISTOR
    • SINGLE WITH BUILT-IN FET AND RESISTOR
    • SINGLE WITH BUILT-IN RESISTOR
    • Single
Surface Mount
    • NO
    • YES
Nominal Transition Frequency (fT) (1)
    • 400 MHz
    • .075 MHz
    • .1 MHz
    • .125 MHz
    • .22 MHz
    • .25 MHz
    • .3 MHz
    • 1 MHz
    • 1.3 MHz
    • 1.5 MHz
    • 10 MHz
    • 100 MHz
    • 104 MHz
    • 105 MHz
    • 110 MHz
    • 112 MHz
    • 114 MHz
    • 115 MHz
    • 12 MHz
    • 120 MHz
    • 1200 MHz
    • 125 MHz
    • 130 MHz
    • 132 MHz
    • 135 MHz
    • 140 MHz
    • 142 MHz
    • 145 MHz
    • 15 MHz
    • 150 MHz
    • 152 MHz
    • 155 MHz
    • 160 MHz
    • 163 MHz
    • 165 MHz
    • 170 MHz
    • 175 MHz
    • 176 MHz
    • 180 MHz
    • 185 MHz
    • 190 MHz
    • 195 MHz
    • 2 MHz
    • 20 MHz
    • 200 MHz
    • 205 MHz
    • 210 MHz
    • 215 MHz
    • 220 MHz
    • 2200 MHz
    • 225 MHz
    • 230 MHz
    • 235 MHz
    • 240 MHz
    • 25 MHz
    • 250 MHz
    • 260 MHz
    • 265 MHz
    • 27 MHz
    • 270 MHz
    • 28 MHz
    • 280 MHz
    • 285 MHz
    • 290 MHz
    • 3 MHz
    • 30 MHz
    • 300 MHz
    • 307 MHz
    • 310 MHz
    • 320 MHz
    • 325 MHz
    • 33 MHz
    • 330 MHz
    • 335 MHz
    • 340 MHz
    • 35 MHz
    • 350 MHz
    • 35000 MHz
    • 360 MHz
    • 36000 MHz
    • 361 MHz
    • 370 MHz
    • 38 MHz
    • 380 MHz
    • 390 MHz
    • 4 MHz
    • 40 MHz
    • 41000 MHz
    • 42 MHz
    • 420 MHz
    • 430 MHz
    • 45 MHz
    • 450 MHz
    • 460 MHz
    • 490 MHz
    • 5 MHz
    • 50 MHz
    • 500 MHz
    • 510 MHz
    • 520 MHz
    • 540 MHz
    • 55 MHz
    • 6 MHz
    • 60 MHz
    • 600 MHz
    • 65 MHz
    • 650 MHz
    • 690 MHz
    • 7 MHz
    • 70 MHz
    • 72 MHz
    • 75 MHz
    • 8 MHz
    • 80 MHz
    • 85 MHz
    • 9 MHz
    • 90 MHz
    • 95 MHz
Maximum Power Dissipation (Abs)
    • .0002 W
    • .0005 W
    • .0012 W
    • .0024 W
    • .05 W
    • .1 W
    • .12 W
    • .125 W
    • .13 W
    • .14 W
    • .145 W
    • .15 W
    • .165 W
    • .175 W
    • .18 W
    • .2 W
    • .202 W
    • .21 W
    • .225 W
    • .227 W
    • .23 W
    • .235 W
    • .24 W
    • .25 W
    • .256 W
    • .26 W
    • .265 W
    • .27 W
    • .28 W
    • .285 W
    • .29 W
    • .297 W
    • .3 W
    • .31 W
    • .32 W
    • .325 W
    • .33 W
    • .338 W
    • .342 W
    • .345 W
    • .347 W
    • .35 W
    • .36 W
    • .365 W
    • .37 W
    • .38 W
    • .385 W
    • .39 W
    • .4 W
    • .408 W
    • .41 W
    • .415 W
    • .42 W
    • .425 W
    • .43 W
    • .435 W
    • .45 W
    • .46 W
    • .48 W
    • .49 W
    • .5 W
    • .53 W
    • .54 W
    • .55 W
    • .57 W
    • .58 W
    • .59 W
    • .6 W
    • .62 W
    • .625 W
    • .626 W
    • .63 W
    • .64 W
    • .65 W
    • .66 W
    • .661 W
    • .665 W
    • .68 W
    • .7 W
    • .71 W
    • .725 W
    • .73 W
    • .75 W
    • .76 W
    • .783 W
    • .8 W
    • .806 W
    • .83 W
    • .85 W
    • .87 W
    • .885 W
    • .9 W
    • .925 W
    • .95 W
    • 1 W
    • 1.1 W
    • 1.15 W
    • 1.16 W
    • 1.18 W
    • 1.2 W
    • 1.25 W
    • 1.28 W
    • 1.3 W
    • 1.35 W
    • 1.4 W
    • 1.43 W
    • 1.45 W
    • 1.48 W
    • 1.5 W
    • 1.56 W
    • 1.6 W
    • 1.65 W
    • 1.67 W
    • 1.7 W
    • 1.75 W
    • 1.77 W
    • 1.8 W
    • 1.81 W
    • 10 W
    • 100 W
    • 11.9 W
    • 125 W
    • 13 W
    • 15 W
    • 150 W
    • 18 W
    • 2 W
    • 2.1 W
    • 2.25 W
    • 2.27 W
    • 2.3 W
    • 2.45 W
    • 2.47 W
    • 2.5 W
    • 2.75 W
    • 2.8 W
    • 20 W
    • 22 W
    • 25 W
    • 250 W
    • 3 W
    • 3.1 W
    • 3.2 W
    • 3.5 W
    • 30 W
    • 300 W
    • 35 W
    • 350 W
    • 38.7 W
    • 4 W
    • 5 W
    • 50 W
    • 6 W
    • 6.25 W
    • 60 W
    • 7 W
    • 700 W
    • 75 W
    • 750 W
    • 8 W
    • 80 W
    • 9.4 W
Maximum Collector Current (IC)
    • .00005 A
    • .0001 A
    • .00014 A
    • .0005 A
    • .0008 A
    • .001 A
    • .0015 A
    • .002 A
    • .0025 A
    • .004 A
    • .005 A
    • .0053 A
    • .01 A
    • .012 A
    • .015 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .05 A
    • .06 A
    • .07 A
    • .075 A
    • .08 A
    • .1 A
    • .12 A
    • .14 A
    • .15 A
    • .2 A
    • .22 A
    • .225 A
    • .25 A
    • .3 A
    • .4 A
    • .5 A
    • .55 A
    • .6 A
    • .7 A
    • .75 A
    • .8 A
    • .9 A
    • .95 A
    • 1 A
    • 1.2 A
    • 1.25 A
    • 1.3 A
    • 1.35 A
    • 1.5 A
    • 1.65 A
    • 1.7 A
    • 1.8 A
    • 10 A
    • 15 A
    • 2 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.7 A
    • 3 A
    • 3.5 A
    • 3.7 A
    • 3.8 A
    • 30 A
    • 4 A
    • 4.1 A
    • 4.2 A
    • 4.3 A
    • 4.4 A
    • 4.5 A
    • 4.6 A
    • 4.7 A
    • 4.8 A
    • 4.9 A
    • 5 A
    • 5.1 A
    • 5.2 A
    • 5.3 A
    • 5.5 A
    • 5.6 A
    • 5.7 A
    • 5.8 A
    • 5.9 A
    • 6 A
    • 6.2 A
    • 6.5 A
    • 6.6 A
    • 6.7 A
    • 7 A
    • 7.5 A
    • 8 A
    • 9 A
Package Body Material
    • CERAMIC, GLASS-SEALED
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • CHOPPER
    • SWITCHING
Maximum Rise Time (tr)
    • 20 ns
    • 25 ns
Maximum VCEsat
    • .03 V
    • .06 V
    • .1 V
    • .115 V
    • .125 V
    • .14 V
    • .15 V
    • .17 V
    • .18 V
    • .185 V
    • .2 V
    • .21 V
    • .22 V
    • .23 V
    • .235 V
    • .24 V
    • .245 V
    • .25 V
    • .27 V
    • .275 V
    • .28 V
    • .285 V
    • .29 V
    • .3 V
    • .315 V
    • .32 V
    • .33 V
    • .34 V
    • .345 V
    • .35 V
    • .37 V
    • .375 V
    • .38 V
    • .39 V
    • .4 V
    • .42 V
    • .44 V
    • .45 V
    • .46 V
    • .5 V
    • .55 V
    • .56 V
    • .6 V
    • .62 V
    • .65 V
    • .7 V
    • .75 V
    • .8 V
    • .82 V
    • .9 V
    • 1 V
    • 1.1 V
    • 1.2 V
    • 1.25 V
    • 1.3 V
    • 1.4 V
    • 1.5 V
    • 1.6 V
    • 1.7 V
    • 1.8 V
    • 10 V
    • 2 V
    • 2.2 V
    • 2.4 V
    • 2.5 V
    • 200 V
    • 3 V
    • 400 V
    • 45 V
    • 5 V
    • 550 V
Minimum DS Breakdown Voltage
    • 12 V
    • 20 V
    • 50 V
    • 60 V
Terminal Form
    • BALL
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • SOLDER LUG
    • THROUGH-HOLE
    • UNSPECIFIED
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 12
    • 14
    • 2
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
Maximum Fall Time (tf)
    • 30 ns
    • 60 ns
No. of Terminals
    • 10
    • 14
    • 16
    • 18
    • 2
    • 20
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
    • 9
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • GRID ARRAY
    • IN-LINE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • BIP General Purpose Small Signal
    • BIP General Purpose Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • .1 W
    • .15 W
    • .2 W
    • .225 W
    • .25 W
    • .28 W
    • .3 W
    • .31 W
    • .33 W
    • .34 W
    • .35 W
    • .36 W
    • .39 W
    • .4 W
    • .45 W
    • .5 W
    • .53 W
    • .54 W
    • .6 W
    • .625 W
    • .64 W
    • .69 W
    • .7 W
    • .75 W
    • .78 W
    • .8 W
    • .806 W
    • .9 W
    • .96 W
    • 1 W
    • 1.2 W
    • 1.3 W
    • 1.31 W
    • 1.4 W
    • 1.5 W
    • 1.8 W
    • 10 W
    • 125 W
    • 15 W
    • 2 W
    • 2.27 W
    • 2.5 W
    • 20 W
    • 3 W
    • 3.7 W
    • 5 W
    • 6 W
    • 6.25 W
    • 7 W
    • 8 W
Minimum DC Current Gain (hFE)
    • .9
    • 10
    • 100
    • 1000
    • 10000
    • 105
    • 106
    • 110
    • 112
    • 115
    • 118
    • 12
    • 120
    • 1200
    • 125
    • 13
    • 130
    • 132
    • 135
    • 14
    • 140
    • 14000
    • 144
    • 15
    • 150
    • 1500
    • 15000
    • 155
    • 16
    • 160
    • 1600
    • 170
    • 175
    • 18
    • 180
    • 190
    • 20
    • 200
    • 2000
    • 20000
    • 202
    • 210
    • 213
    • 215
    • 220
    • 223
    • 225
    • 230
    • 235
    • 24
    • 240
    • 25
    • 250
    • 260
    • 263
    • 27
    • 270
    • 275
    • 28
    • 280
    • 29
    • 290
    • 3
    • 30
    • 300
    • 3000
    • 30000
    • 33
    • 333
    • 340
    • 35
    • 350
    • 36
    • 380
    • 39
    • 4
    • 4.5
    • 40
    • 400
    • 4000
    • 410
    • 415
    • 42
    • 420
    • 435
    • 45
    • 450
    • 47
    • 48
    • 49
    • 5
    • 50
    • 500
    • 5000
    • 54
    • 55
    • 56
    • 560
    • 6
    • 60
    • 600
    • 62
    • 63
    • 64
    • 640
    • 65
    • 66
    • 67
    • 68
    • 7
    • 70
    • 72
    • 75
    • 76
    • 77
    • 78
    • 79
    • 8
    • 80
    • 800
    • 8000
    • 81
    • 82
    • 820
    • 84
    • 85
    • 88
    • 9
    • 90
    • 95
    • 96
    • 97
Maximum Operating Temperature
    • 100 Cel
    • 105 Cel
    • 125 Cel
    • 135 Cel
    • 140 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 225 Cel
    • 70 Cel
    • 75 Cel
    • 85 Cel
Maximum Collector-Base Capacitance
    • .3 pF
    • .55 pF
    • .7 pF
    • .9 pF
    • 1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.4 pF
    • 1.5 pF
    • 1.6 pF
    • 1.7 pF
    • 1.8 pF
    • 1.9 pF
    • 10 pF
    • 100 pF
    • 11 pF
    • 12 pF
    • 120 pF
    • 13 pF
    • 14 pF
    • 15 pF
    • 16 pF
    • 17 pF
    • 18 pF
    • 19 pF
    • 2 pF
    • 2.2 pF
    • 2.3 pF
    • 2.5 pF
    • 2.8 pF
    • 20 pF
    • 22 pF
    • 23 pF
    • 24 pF
    • 25 pF
    • 250 pF
    • 27 pF
    • 3 pF
    • 3.2 pF
    • 3.5 pF
    • 3.6 pF
    • 30 pF
    • 32 pF
    • 35 pF
    • 4 pF
    • 4.5 pF
    • 40 pF
    • 43 pF
    • 45 pF
    • 5 pF
    • 5.4 pF
    • 5.5 pF
    • 50 pF
    • 52 pF
    • 53 pF
    • 55 pF
    • 6 pF
    • 6.2 pF
    • 6.5 pF
    • 60 pF
    • 62 pF
    • 65 pF
    • 7 pF
    • 7.2 pF
    • 70 pF
    • 8 pF
    • 8.5 pF
    • 80 pF
    • 9 pF
    • 90 pF
    • 95 pF
Transistor Element Material
    • GERMANIUM
    • SILICON
    • SILICON GERMANIUM
Maximum Collector-Emitter Voltage
    • 10 V
    • 100 V
    • 110 V
    • 115 V
    • 12 V
    • 120 V
    • 125 V
    • 130 V
    • 140 V
    • 15 V
    • 150 V
    • 16 V
    • 160 V
    • 17.5 V
    • 170 V
    • 175 V
    • 18 V
    • 180 V
    • 2 V
    • 20 V
    • 200 V
    • 22 V
    • 24 V
    • 25 V
    • 250 V
    • 285 V
    • 3.5 V
    • 30 V
    • 300 V
    • 32 V
    • 325 V
    • 35 V
    • 350 V
    • 36 V
    • 370 V
    • 375 V
    • 4 V
    • 40 V
    • 400 V
    • 410 V
    • 45 V
    • 450 V
    • 480 V
    • 5 V
    • 50 V
    • 500 V
    • 530 V
    • 55 V
    • 550 V
    • 60 V
    • 600 V
    • 65 V
    • 70 V
    • 72 V
    • 75 V
    • 8 V
    • 80 V
    • 800 V
    • 85 V
    • 90 V
Maximum Turn On Time (ton)
    • 10 ns
    • 100 ns
    • 1000 ns
    • 104 ns
    • 110 ns
    • 1100 ns
    • 114 ns
    • 115 ns
    • 12 ns
    • 120 ns
    • 122 ns
    • 13 ns
    • 130 ns
    • 135 ns
    • 140 ns
    • 141 ns
    • 1411.7 ns
    • 15 ns
    • 150 ns
    • 1500 ns
    • 155 ns
    • 160 ns
    • 165 ns
    • 17 ns
    • 170 ns
    • 179 ns
    • 18 ns
    • 180 ns
    • 182 ns
    • 190 ns
    • 20 ns
    • 200 ns
    • 2000 ns
    • 21 ns
    • 210 ns
    • 215 ns
    • 22 ns
    • 220 ns
    • 230 ns
    • 235 ns
    • 240 ns
    • 25 ns
    • 250 ns
    • 252 ns
    • 255 ns
    • 26 ns
    • 28 ns
    • 280 ns
    • 30 ns
    • 30.5 ns
    • 300 ns
    • 33 ns
    • 330 ns
    • 338 ns
    • 340 ns
    • 35 ns
    • 350 ns
    • 355 ns
    • 365 ns
    • 37 ns
    • 37.5 ns
    • 370 ns
    • 3700 ns
    • 38 ns
    • 39 ns
    • 40 ns
    • 40.5 ns
    • 400 ns
    • 41 ns
    • 43 ns
    • 430 ns
    • 45 ns
    • 48 ns
    • 50 ns
    • 500 ns
    • 51.9 ns
    • 530 ns
    • 55 ns
    • 572 ns
    • 6 ns
    • 60 ns
    • 600 ns
    • 61 ns
    • 610 ns
    • 62 ns
    • 63 ns
    • 643 ns
    • 65 ns
    • 7 ns
    • 70 ns
    • 700 ns
    • 72 ns
    • 75 ns
    • 768 ns
    • 80 ns
    • 800 ns
    • 83 ns
    • 85 ns
    • 860 ns
    • 88 ns
    • 90 ns
    • 95 ns
Minimum Operating Temperature
    • -20 Cel
    • -25 Cel
    • -40 Cel
    • -55 Cel
    • -65 Cel
    • 0 Cel
Maximum Turn Off Time (toff)
    • .5 ns
    • 10 ns
    • 100 ns
    • 1000 ns
    • 10000 ns
    • 102 ns
    • 105 ns
    • 1058 ns
    • 1095 ns
    • 110 ns
    • 1100 ns
    • 1110 ns
    • 115 ns
    • 1150 ns
    • 1157 ns
    • 12 ns
    • 1200 ns
    • 1220 ns
    • 1279 ns
    • 1300 ns
    • 1307 ns
    • 136 ns
    • 140 ns
    • 141 ns
    • 1475 ns
    • 15 ns
    • 150 ns
    • 1500 ns
    • 1530 ns
    • 155 ns
    • 159.1 ns
    • 160 ns
    • 1600 ns
    • 1640 ns
    • 165 ns
    • 167 ns
    • 170 ns
    • 1700 ns
    • 1730 ns
    • 175 ns
    • 18 ns
    • 180 ns
    • 1800 ns
    • 185 ns
    • 190 ns
    • 1900 ns
    • 1940 ns
    • 20 ns
    • 200 ns
    • 2000 ns
    • 205 ns
    • 2060 ns
    • 21 ns
    • 210 ns
    • 213 ns
    • 218.7 ns
    • 220 ns
    • 225 ns
    • 2260 ns
    • 230 ns
    • 2300 ns
    • 237 ns
    • 24 ns
    • 240 ns
    • 2400 ns
    • 25 ns
    • 250 ns
    • 2500 ns
    • 255 ns
    • 260 ns
    • 270 ns
    • 2700 ns
    • 275 ns
    • 28 ns
    • 280 ns
    • 2800 ns
    • 2808 ns
    • 285 ns
    • 295 ns
    • 297 ns
    • 3.5 ns
    • 30 ns
    • 300 ns
    • 3000 ns
    • 301.5 ns
    • 305 ns
    • 310 ns
    • 312 ns
    • 32 ns
    • 320 ns
    • 3240 ns
    • 325 ns
    • 3300 ns
    • 335 ns
    • 340 ns
    • 345 ns
    • 35 ns
    • 350 ns
    • 3500 ns
    • 355 ns
    • 365 ns
    • 366 ns
    • 370 ns
    • 3740 ns
    • 375 ns
    • 379 ns
    • 380 ns
    • 388 ns
    • 398 ns
    • 40 ns
    • 400 ns
    • 4000 ns
    • 410 ns
    • 4150 ns
    • 420 ns
    • 4200 ns
    • 425 ns
    • 430 ns
    • 445 ns
    • 45 ns
    • 450 ns
    • 460 ns
    • 470 ns
    • 4700 ns
    • 480 ns
    • 5 ns
    • 50 ns
    • 500 ns
    • 5000 ns
    • 510 ns
    • 512 ns
    • 520 ns
    • 524.2 ns
    • 525 ns
    • 530 ns
    • 5300 ns
    • 55 ns
    • 5500 ns
    • 555 ns
    • 570 ns
    • 580 ns
    • 583 ns
    • 589 ns
    • 590 ns
    • 60 ns
    • 600 ns
    • 6000 ns
    • 61 ns
    • 61.4 ns
    • 610 ns
    • 620 ns
    • 65 ns
    • 650 ns
    • 665 ns
    • 680 ns
    • 685 ns
    • 690 ns
    • 70 ns
    • 700 ns
    • 75 ns
    • 750 ns
    • 760 ns
    • 785 ns
    • 80 ns
    • 800 ns
    • 8000 ns
    • 82 ns
    • 83 ns
    • 85 ns
    • 850 ns
    • 890 ns
    • 90 ns
    • 900 ns
    • 950 ns
    • 980 ns
    • 985 ns
    • 990 ns
Terminal Finish
    • BRIGHT TIN
    • GOLD
    • GOLD OVER NICKEL
    • Gold (Au)
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • MATTE TIN/SILVER
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL PALLADIUM GOLD
    • Nickel/Gold (Ni/Au)
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN LEAD OVER NICKEL
    • TIN OVER COPPER
    • TIN SILVER
    • TIN SILVER COPPER
    • TIN SILVER COPPER NICKEL
    • TIN/NICKEL PALLADIUM GOLD
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Bismuth (Sn98Bi2)
    • Tin/Copper (Sn/Cu)
    • Tin/Copper (Sn98Cu2)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Lead (Sn63Pb37)
    • Tin/Lead (Sn80Pb20)
    • Tin/Lead (Sn85Pb15)
    • Tin/Silver/Copper (Sn/Ag/Cu)
    • Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
    • Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
Maximum Drain-Source On Resistance
    • .028 ohm
    • 1.4 ohm
    • 3.5 ohm
    • 4 ohm
Maximum Drain Current (ID)
    • .16 A
    • .224 A
    • .35 A
    • 6 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
    • ZIG-ZAG
JESD-30 Code
    • O-CRDB-F3
    • O-MBCY-T3
    • O-MBCY-W3
    • O-MBCY-W4
    • O-MBCY-W6
    • O-MBCY-W8
    • O-MBFM-P2
    • O-MBFM-W3
    • O-MBPM-W3
    • O-MUFM-D3
    • O-PBCY-T3
    • O-PBCY-W3
    • O-PBCY-W4
    • O-PBCY-W6
    • O-PSIP-W3
    • O-XBCY-T3
    • O-XBCY-W3
    • R-CBCC-N3
    • R-CBCC-N6
    • R-CDCC-N3
    • R-CDCC-N6
    • R-CDFP-F10
    • R-CDIP-T14
    • R-CDIP-T16
    • R-CDSO-N3
    • R-CDSO-N4
    • R-CDSO-N6
    • R-GDIP-T14
    • R-MBCY-W3
    • R-MDFP-F6
    • R-PBCC-N3
    • R-PBCC-N6
    • R-PBCY-T3
    • R-PBCY-W3
    • R-PDFP-F6
    • R-PDIP-T14
    • R-PDIP-T16
    • R-PDIP-T18
    • R-PDIP-T8
    • R-PDSO-C3
    • R-PDSO-C8
    • R-PDSO-F14
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-F5
    • R-PDSO-F6
    • R-PDSO-F8
    • R-PDSO-G
    • R-PDSO-G10
    • R-PDSO-G14
    • R-PDSO-G16
    • R-PDSO-G18
    • R-PDSO-G2
    • R-PDSO-G20
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PDSO-N3
    • R-PDSO-N4
    • R-PDSO-N6
    • R-PDSO-N8
    • R-PDSO-X6
    • R-PQFP-F10
    • R-PQFP-F5
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSIP-T7
    • R-PSIP-T9
    • R-PSIP-W3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-PSSO-G2
    • R-PSSO-G3
    • R-PSSO-G4
    • R-PSSO-N2
    • R-PSSO-N3
    • R-PZIP-T7
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XBCC-N6
    • R-XDSO-N3
    • R-XDSO-N4
    • R-XDSO-N6
    • R-XDSO-N8
    • R-XSFM-T3
    • R-XSIP-T3
    • R-XUUC-N2
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XXUC-N6
    • S-CDFP-F8
    • S-CQCC-N20
    • S-PBCC-N3
    • S-PBGA-B4
    • S-PDSO-F3
    • S-PDSO-F5
    • S-PDSO-F6
    • S-PDSO-G8
    • S-PDSO-N3
    • S-PDSO-N6
    • S-PDSO-N8
    • S-PQCC-N16
    • S-PQFP-F3
    • S-PQFP-F5
    • S-XDSO-N3
    • S-XUUC-N14
    • S-XUUC-N2
    • X-MUPM-W3
Moisture Sensitivity Level (MSL)
    • 1
    • 3
    • NOT APPLICABLE
Case Connection
    • BASE
    • COLLECTOR
    • EMITTER
    • ISOLATED
    • SUBSTRATE
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • BUILIT-IN BIAS RESISTOR
    • BUILT IN 2SA2018 AND 2SK3019
    • BUILT IN BAIS RESISTOR RATIO IS 0.47
    • BUILT IN BAIS RESISTOR RATIO IS 1
    • BUILT IN BAIS RESISTOR RATIO IS 10
    • BUILT IN BAIS RESISTOR RATIO IS 2.136
    • BUILT IN BAIS RESISTOR RATIO IS 21
    • BUILT IN BAIS RESISTOR RATIO IS 21.36
    • BUILT IN BAIS RESISTOR RATIO IS 4.7
    • BUILT IN BIAS RESISITOR RATIO IS 1
    • BUILT IN BIAS RESISTANCE
    • BUILT IN BIAS RESISTANCE RATIO
    • BUILT IN BIAS RESISTANCE RATIO 1.11
    • BUILT IN BIAS RESISTANCE RATIO 100
    • BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY
    • BUILT IN BIAS RESISTANCE RATIO IS 0.033
    • BUILT IN BIAS RESISTANCE RATIO IS 0.0857
    • BUILT IN BIAS RESISTANCE RATIO IS 0.21
    • BUILT IN BIAS RESISTANCE RATIO IS 0.212
    • BUILT IN BIAS RESISTANCE RATIO IS 0.468
    • BUILT IN BIAS RESISTANCE RATIO IS 0.47
    • BUILT IN BIAS RESISTANCE RATIO IS 0.47; HIGH RELIABILITY
    • BUILT IN BIAS RESISTANCE RATIO IS 0.48
    • BUILT IN BIAS RESISTANCE RATIO IS 1
    • BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY
    • BUILT IN BIAS RESISTANCE RATIO IS 1.0
    • BUILT IN BIAS RESISTANCE RATIO IS 1.2
    • BUILT IN BIAS RESISTANCE RATIO IS 10
    • BUILT IN BIAS RESISTANCE RATIO IS 1; HIGH RELIABILITY
    • BUILT IN BIAS RESISTANCE RATIO IS 2.1
    • BUILT IN BIAS RESISTANCE RATIO IS 2.12
    • BUILT IN BIAS RESISTANCE RATIO IS 2.127
    • BUILT IN BIAS RESISTANCE RATIO IS 2.13
    • BUILT IN BIAS RESISTANCE RATIO IS 2.136
    • BUILT IN BIAS RESISTANCE RATIO IS 2.14
    • BUILT IN BIAS RESISTANCE RATIO IS 2.2
    • BUILT IN BIAS RESISTANCE RATIO IS 21
    • BUILT IN BIAS RESISTANCE RATIO IS 21.27
    • BUILT IN BIAS RESISTANCE RATIO IS 21.36
    • BUILT IN BIAS RESISTANCE RATIO IS 21.364
    • BUILT IN BIAS RESISTANCE RATIO IS 4.5
    • BUILT IN BIAS RESISTANCE RATIO IS 4.55
    • BUILT IN BIAS RESISTANCE RATIO IS 4.7
    • BUILT IN BIAS RESISTANCE RATIO IS 4.7, HIGH RELIABILITY
    • BUILT IN BIAS RESISTANCE RATIO IS 4.76
    • BUILT IN BIAS RESISTOR
    • BUILT IN BIAS RESISTOR RATIO
    • BUILT IN BIAS RESISTOR RATIO 0.047
    • BUILT IN BIAS RESISTOR RATIO 0.1
    • BUILT IN BIAS RESISTOR RATIO 0.468
    • BUILT IN BIAS RESISTOR RATIO 0.47
    • BUILT IN BIAS RESISTOR RATIO 1
    • BUILT IN BIAS RESISTOR RATIO 1.0
    • BUILT IN BIAS RESISTOR RATIO 10
    • BUILT IN BIAS RESISTOR RATIO 100
    • BUILT IN BIAS RESISTOR RATIO 2.1
    • BUILT IN BIAS RESISTOR RATIO 2.12
    • BUILT IN BIAS RESISTOR RATIO 2.128
    • BUILT IN BIAS RESISTOR RATIO 2.13
    • BUILT IN BIAS RESISTOR RATIO 2.136
    • BUILT IN BIAS RESISTOR RATIO 2.1364
    • BUILT IN BIAS RESISTOR RATIO 2.14
    • BUILT IN BIAS RESISTOR RATIO 2.364
    • BUILT IN BIAS RESISTOR RATIO 2.68
    • BUILT IN BIAS RESISTOR RATIO 21
    • BUILT IN BIAS RESISTOR RATIO 21.28
    • BUILT IN BIAS RESISTOR RATIO 21.36
    • BUILT IN BIAS RESISTOR RATIO 21.364
    • BUILT IN BIAS RESISTOR RATIO 21.37
    • BUILT IN BIAS RESISTOR RATIO 3.030
    • BUILT IN BIAS RESISTOR RATIO 4.54
    • BUILT IN BIAS RESISTOR RATIO 4.545
    • BUILT IN BIAS RESISTOR RATIO 4.55
    • BUILT IN BIAS RESISTOR RATIO 4.7
    • BUILT IN BIAS RESISTOR RATIO 45.45
    • BUILT IN BIAS RESISTOR RATIO IS 0.047
    • BUILT IN BIAS RESISTOR RATIO IS 0.1
    • BUILT IN BIAS RESISTOR RATIO IS 0.21
    • BUILT IN BIAS RESISTOR RATIO IS 0.212
    • BUILT IN BIAS RESISTOR RATIO IS 0.46
    • BUILT IN BIAS RESISTOR RATIO IS 0.468
    • BUILT IN BIAS RESISTOR RATIO IS 0.47
    • BUILT IN BIAS RESISTOR RATIO IS 1
    • BUILT IN BIAS RESISTOR RATIO IS 1, EUROPEAN PART NUMBER
    • BUILT IN BIAS RESISTOR RATIO IS 1, HIGH RELIABILITY
    • BUILT IN BIAS RESISTOR RATIO IS 1.0
    • BUILT IN BIAS RESISTOR RATIO IS 10
    • BUILT IN BIAS RESISTOR RATIO IS 10, EUROPEAN PART NUMBER
    • BUILT IN BIAS RESISTOR RATIO IS 2.1
    • BUILT IN BIAS RESISTOR RATIO IS 2.127
    • BUILT IN BIAS RESISTOR RATIO IS 2.13
    • BUILT IN BIAS RESISTOR RATIO IS 2.136
    • BUILT IN BIAS RESISTOR RATIO IS 2.14
    • BUILT IN BIAS RESISTOR RATIO IS 21
    • BUILT IN BIAS RESISTOR RATIO IS 21.27
    • BUILT IN BIAS RESISTOR RATIO IS 21.28
    • BUILT IN BIAS RESISTOR RATIO IS 21.36
    • BUILT IN BIAS RESISTOR RATIO IS 21.36, TR,7 INCH: 3000
    • BUILT IN BIAS RESISTOR RATIO IS 21.363
    • BUILT IN BIAS RESISTOR RATIO IS 21.37
    • BUILT IN BIAS RESISTOR RATIO IS 3.03
    • BUILT IN BIAS RESISTOR RATIO IS 4.5
    • BUILT IN BIAS RESISTOR RATIO IS 4.54
    • BUILT IN BIAS RESISTOR RATIO IS 4.545
    • BUILT IN BIAS RESISTOR RATIO IS 4.55
    • BUILT IN BIAS RESISTOR RATIO IS 4.7
    • BUILT IN BIAS RESISTOR RATIO IS 4.7, EUROPEAN PART NUMBER
    • BUILT IN BIAS RESISTOR RATIO IS 4.76
    • BUILT IN BIAS RESISTOR RATIO IS 45.45
    • BUILT IN BIAS RESISTOR RATION IS 1
    • BUILT IN BIAS RESISTOR, HIGH RELIABILITY
    • BUILT IN BIAS RESISTOR, TR, 7 INCH: 3000
    • BUILT IN BIAS RESISTORS
    • BUILT-IN BAIS RESISTOR RATIO IS 0.47
    • BUILT-IN BAIS RESISTOR RATIO IS 2.14
    • BUILT-IN BAIS RESISTOR RATIO IS 4.7
    • BUILT-IN BIAS RESISITOR RATIO IS 0.468
    • BUILT-IN BIAS RESISITOR RATIO IS 1
    • BUILT-IN BIAS RESISITOR RATIO IS 10
    • BUILT-IN BIAS RESISITOR RATIO IS 2.136
    • BUILT-IN BIAS RESISITOR RATIO IS 21.363
    • BUILT-IN BIAS RESISITOR RATIO IS 4.7
    • BUILT-IN BIAS RESISTANCE RATIO 0.21
    • BUILT-IN BIAS RESISTANCE RATIO 0.47
    • BUILT-IN BIAS RESISTANCE RATIO 10
    • BUILT-IN BIAS RESISTANCE RATIO 2.13
    • BUILT-IN BIAS RESISTANCE RATIO 2.14
    • BUILT-IN BIAS RESISTANCE RATIO 21.28
    • BUILT-IN BIAS RESISTANCE RATIO 21.36
    • BUILT-IN BIAS RESISTANCE RATIO 4.55
    • BUILT-IN BIAS RESISTANCE RATIO 4.68
    • BUILT-IN BIAS RESISTANCE RATIO 4.7
    • BUILT-IN BIAS RESISTANCE RATIO 45.45
    • BUILT-IN BIAS RESISTANCE RATIO IS 0.21
    • BUILT-IN BIAS RESISTANCE RATIO IS 0.468
    • BUILT-IN BIAS RESISTANCE RATIO IS 0.47
    • BUILT-IN BIAS RESISTANCE RATIO IS 1
    • BUILT-IN BIAS RESISTANCE RATIO IS 10
    • BUILT-IN BIAS RESISTANCE RATIO IS 10, HIGH RELIABILITY
    • BUILT-IN BIAS RESISTANCE RATIO IS 12.27
    • BUILT-IN BIAS RESISTANCE RATIO IS 2.1
    • BUILT-IN BIAS RESISTANCE RATIO IS 2.13
    • BUILT-IN BIAS RESISTANCE RATIO IS 2.14
    • BUILT-IN BIAS RESISTANCE RATIO IS 21.28
    • BUILT-IN BIAS RESISTANCE RATIO IS 21.36
    • BUILT-IN BIAS RESISTANCE RATIO IS 4.54
    • BUILT-IN BIAS RESISTANCE RATIO IS 4.55
    • BUILT-IN BIAS RESISTANCE RATIO IS 4.68
    • BUILT-IN BIAS RESISTANCE RATIO IS 4.7
    • BUILT-IN BIAS RESISTANCE RATIO IS 4.7, HIGH RELIABILITY
    • BUILT-IN BIAS RESISTANCE RATIO IS 45.45
    • BUILT-IN BIAS RESISTOR
    • BUILT-IN BIAS RESISTOR IS 1
    • BUILT-IN BIAS RESISTOR IS 10
    • BUILT-IN BIAS RESISTOR IS 21.36
    • BUILT-IN BIAS RESISTOR RATIO 0.1
    • BUILT-IN BIAS RESISTOR RATIO 0.21
    • BUILT-IN BIAS RESISTOR RATIO 0.22
    • BUILT-IN BIAS RESISTOR RATIO 0.47
    • BUILT-IN BIAS RESISTOR RATIO 1
    • BUILT-IN BIAS RESISTOR RATIO 10
    • BUILT-IN BIAS RESISTOR RATIO 2.1
    • BUILT-IN BIAS RESISTOR RATIO 2.13
    • BUILT-IN BIAS RESISTOR RATIO 2.136
    • BUILT-IN BIAS RESISTOR RATIO 2.14
    • BUILT-IN BIAS RESISTOR RATIO 21
    • BUILT-IN BIAS RESISTOR RATIO 21.28
    • BUILT-IN BIAS RESISTOR RATIO 21.36
    • BUILT-IN BIAS RESISTOR RATIO 3.03
    • BUILT-IN BIAS RESISTOR RATIO 4.5
    • BUILT-IN BIAS RESISTOR RATIO 4.54
    • BUILT-IN BIAS RESISTOR RATIO 4.55
    • BUILT-IN BIAS RESISTOR RATIO 4.68
    • BUILT-IN BIAS RESISTOR RATIO 4.7
    • BUILT-IN BIAS RESISTOR RATIO 45.45
    • BUILT-IN BIAS RESISTOR RATIO IS
    • BUILT-IN BIAS RESISTOR RATIO IS 0.0468
    • BUILT-IN BIAS RESISTOR RATIO IS 0.047
    • BUILT-IN BIAS RESISTOR RATIO IS 0.1
    • BUILT-IN BIAS RESISTOR RATIO IS 0.12
    • BUILT-IN BIAS RESISTOR RATIO IS 0.21
    • BUILT-IN BIAS RESISTOR RATIO IS 0.213
    • BUILT-IN BIAS RESISTOR RATIO IS 0.22
    • BUILT-IN BIAS RESISTOR RATIO IS 0.36
    • BUILT-IN BIAS RESISTOR RATIO IS 0.46
    • BUILT-IN BIAS RESISTOR RATIO IS 0.468
    • BUILT-IN BIAS RESISTOR RATIO IS 0.47
    • BUILT-IN BIAS RESISTOR RATIO IS 0.5
    • BUILT-IN BIAS RESISTOR RATIO IS 0.69
    • BUILT-IN BIAS RESISTOR RATIO IS 1
    • BUILT-IN BIAS RESISTOR RATIO IS 1, DIGITAL
    • BUILT-IN BIAS RESISTOR RATIO IS 1, HIGH RELIABILITY
    • BUILT-IN BIAS RESISTOR RATIO IS 1.0
    • BUILT-IN BIAS RESISTOR RATIO IS 10
    • BUILT-IN BIAS RESISTOR RATIO IS 10, HIGH RELIABILITY
    • BUILT-IN BIAS RESISTOR RATIO IS 2.1
    • BUILT-IN BIAS RESISTOR RATIO IS 2.12
    • BUILT-IN BIAS RESISTOR RATIO IS 2.127
    • BUILT-IN BIAS RESISTOR RATIO IS 2.13
    • BUILT-IN BIAS RESISTOR RATIO IS 2.136
    • BUILT-IN BIAS RESISTOR RATIO IS 2.1363
    • BUILT-IN BIAS RESISTOR RATIO IS 2.14
    • BUILT-IN BIAS RESISTOR RATIO IS 2.15
    • BUILT-IN BIAS RESISTOR RATIO IS 2.67
    • BUILT-IN BIAS RESISTOR RATIO IS 21
    • BUILT-IN BIAS RESISTOR RATIO IS 21.27
    • BUILT-IN BIAS RESISTOR RATIO IS 21.28
    • BUILT-IN BIAS RESISTOR RATIO IS 21.36
    • BUILT-IN BIAS RESISTOR RATIO IS 21.3636
    • BUILT-IN BIAS RESISTOR RATIO IS 21.364
    • BUILT-IN BIAS RESISTOR RATIO IS 21.37
    • BUILT-IN BIAS RESISTOR RATIO IS 21.4
    • BUILT-IN BIAS RESISTOR RATIO IS 3.03
    • BUILT-IN BIAS RESISTOR RATIO IS 3.7
    • BUILT-IN BIAS RESISTOR RATIO IS 4.5
    • BUILT-IN BIAS RESISTOR RATIO IS 4.54
    • BUILT-IN BIAS RESISTOR RATIO IS 4.545
    • BUILT-IN BIAS RESISTOR RATIO IS 4.5454
    • BUILT-IN BIAS RESISTOR RATIO IS 4.55
    • BUILT-IN BIAS RESISTOR RATIO IS 4.68
    • BUILT-IN BIAS RESISTOR RATIO IS 4.69
    • BUILT-IN BIAS RESISTOR RATIO IS 4.7
    • BUILT-IN BIAS RESISTOR RATIO IS 4.7, HIGH RELIABILITY
    • BUILT-IN BIAS RESISTOR RATIO IS 4.76
    • BUILT-IN BIAS RESISTOR RATIO IS 4.761
    • BUILT-IN BIAS RESISTOR RATIO IS 45.45
    • BUILT-IN BIAS RESISTOR, HIGH RELIABILITY
    • BUILT-IN BIAS RESISTORS
    • BUILT-IN BIAS RESISTORS RATIO 1
    • BUILT-IN RESISTOR RATIO IS 0.21
    • BUILT-IN RESISTOR RATIO IS 0.47
    • BUILT-IN RESISTOR RATIO IS 0.95
    • BUILT-IN RESISTOR RATIO IS 1
    • BUILT-IN RESISTOR RATIO IS 1.94
    • BUILT-IN RESISTOR RATIO IS 10
    • BUILT-IN RESISTOR RATIO IS 2.13
    • BUILT-IN RESISTOR RATIO IS 2.14
    • BUILT-IN RESISTOR RATIO IS 21.36
    • BUILT-IN RESISTOR RATIO IS 3.70
    • BUILT-IN RESISTOR RATIO IS 4.55
    • BUILT-IN RESISTOR RATIO IS 4.7
    • BUILT-IN RESISTOR RATIO IS 7.41
    • BULIT-BIAS RESISTOR, LOGIC LEVEL COMPATIBLE
    • DIGITAL
    • DIGITAL, BUILT IN BIAS RESISTOR
    • DIGITAL, BUILT-IN BIAS RESISTOR
    • DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.468
    • DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1
    • DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 10
    • DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 2.1
    • DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 2.12
    • DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 2.127
    • DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 2.1363
    • DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 21.36
    • DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 21.3636
    • DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.5
    • DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7
    • EMITTER-FOLLOWER CIRCUITS BUILT IN, LOW NOISE
    • EUROPEAN PART NUMBER
    • FOR TRANSISTOR2 HFE IS 110
    • FOR TRANSISTOR2 HFE IS 125
    • FOR TRANSISTOR2 HFE IS 200
    • FOR TRANSISTOR2 HFE IS 220
    • FOR TRANSISTOR2 HFE IS 420
    • HIGH CURRENT
    • HIGH CURRENT DRIVER
    • HIGH RELIABILITY
    • HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 1
    • HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10
    • HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 2.13
    • HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 21.36
    • HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 4.7
    • HIGH RELIABILITY, BUILT IN BIAS RESISTOR
    • HIGH RELIABILITY, BUILT IN BIAS RESISTOR RATIO IS 10
    • HIGH RELIABILITY, BUILT IN BIAS RESISTOR RATIO IS 21.36
    • HIGH RELIABILITY, BUILT IN BIAS RESISTOR RATIO IS 4.7
    • HIGH RELIABILITY, BUILT-IN BIAS RESISTANCE RATIO IS 10
    • HIGH RELIABILITY, BUILT-IN BIAS RESISTANCE RATIO IS 4.7
    • HIGH RELIABILITYBUILT-IN BIAS RESISTANCE RATIO IS 21.36
    • HIGH RELIABLITY
    • HIGH SPEED SATURATED SWITCH
    • HIGH SPEED SATURATED SWITCHING
    • HIGH SPEED SWITCHING
    • HIGH VOLTAGE
    • HIGH-SPEED SATURATED SWITCH
    • LOGIC COMPATIBLE
    • LOGIC LEVEL COMPATIBLE
    • LOGIC LEVEL COMPATIBLE, BUILT-IN BAIS RESISTOR
    • LOW NOISE
    • MATCHED PAIR
    • MIL-STD-750
    • NOT FOR AUTOMOTIVE OR INDUSTRIAL USE
    • TR, 7 INCH: 3000
    • VERY LOW NOISE
JEDEC-95 Code
    • MO-041BB
    • MO-095AA
    • MO-153AB
    • MO-187AA
    • MO-193AA
    • MS-001BB
    • MS-012AA
    • MS-012AB
    • MS-012AC
    • TO-106
    • TO-11
    • TO-116
    • TO-12
    • TO-126
    • TO-18
    • TO-202
    • TO-205AD
    • TO-206AA
    • TO-206AB
    • TO-220AB
    • TO-222AB
    • TO-226
    • TO-226AA
    • TO-226AE
    • TO-236
    • TO-236AA
    • TO-236AB
    • TO-236AF
    • TO-237AA
    • TO-243
    • TO-243AA
    • TO-251
    • TO-251AA
    • TO-252
    • TO-252AA
    • TO-261
    • TO-261AA
    • TO-263AB
    • TO-3
    • TO-33
    • TO-39
    • TO-46
    • TO-5
    • TO-50
    • TO-52
    • TO-66
    • TO-72
    • TO-77
    • TO-78
    • TO-92
    • TO-99
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e3/e2
    • e3/e4
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 32
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 210
    • 219
    • 225
    • 235
    • 240
    • 250
    • 260
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • 2.1 pF
    • 2.5 pF
Reference Standard
    • AEC-Q101
    • AEC-Q101; IATF 16949
    • AEC-Q101; IATF 16949, MIL-STD-202
    • AEC-Q101; IATF 16949; MIL-STD-202
    • AEC-Q101; IEC-60134
    • AEC-Q101; MIL-STD-202
    • AEC-Q101; TS 16949
    • CECC
    • CECC50002-233
    • CECC50002-234
    • CECC50002-235
    • CECC50002-236
    • CECC50002-240
    • CECC50002-243
    • CECC50002-244
    • CECC50002-245
    • ESA/SCC 5201/004
    • ESA/SCC 5201/004; RH - 100K Rad(Si)
    • ESA/SCC 5201/019
    • ESA/SCC 5201/019; RH - 100K Rad(Si)
    • ESA/SCC 5202/001; RH - 100K Rad(Si)
    • ESA/SCC 5207/002
    • ESA/SCC 5207/005
    • ESA/SCC 5207/005; RH - 100K Rad(Si)
    • EUROPEAN SPACE AGENCY
    • EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)
    • IEC 60134
    • IEC-134
    • IEC-60134
    • MIL
    • MIL-19500
    • MIL-19500/126C
    • MIL-19500/182F
    • MIL-19500/207
    • MIL-19500/207C
    • MIL-19500/218A
    • MIL-19500/225
    • MIL-19500/225F
    • MIL-19500/251
    • MIL-19500/251L
    • MIL-19500/253H
    • MIL-19500/255
    • MIL-19500/255T
    • MIL-19500/270
    • MIL-19500/290
    • MIL-19500/290K
    • MIL-19500/291
    • MIL-19500/291M
    • MIL-19500/317K
    • MIL-19500/323H
    • MIL-19500/336
    • MIL-19500/336G
    • MIL-19500/355
    • MIL-19500/355J
    • MIL-19500/357H
    • MIL-19500/366
    • MIL-19500/368F
    • MIL-19500/382E
    • MIL-19500/391
    • MIL-19500/391H
    • MIL-19500/393E
    • MIL-19500/396J
    • MIL-19500/421G
    • MIL-19500/485H
    • MIL-19500/495D
    • MIL-19500/512
    • MIL-19500/559
    • MIL-19500/581
    • MIL-19500/99
    • MIL-19500/99E
    • MIL-19500; RH - 100K Rad(Si)
    • MIL-19500; RH - 10K Rad(Si)
    • MIL-19500; RH - 300K Rad(Si)
    • MIL-19500; RH - 30K Rad(Si)
    • MIL-19500; RH - 3K Rad(Si)
    • MIL-19500; RH - 50K Rad(Si)
    • MIL-M38510/108A
    • MIL-PRF-19500; MIL-STD-750
    • MIL-PRF-19500; RH - 100K Rad(Si)
    • MIL-PRF-19500; RH - 300K Rad(Si)
    • MIL-STD-202
    • MIL-STD-202; UL RECOGNIZED
    • MIL-STD-883
    • MILITARY STANDARD (USA)
    • RH - 100K Rad(Si)
    • TS 16949
    • UL RECOGNIZED
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

15C02CH-TL-E

Onsemi

NPN

SINGLE

YES

400 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

300

SILICON

15 V

DUAL

R-PDSO-G3

TO-236

2SC5706-E

Onsemi

NPN

SINGLE

NO

400 MHz

5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

200

SILICON

50 V

Tin/Bismuth (Sn/Bi)

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

e6

NOT SPECIFIED

NOT SPECIFIED

BSV52

Onsemi

NPN

SINGLE

YES

400 MHz

.225 W

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

25

150 Cel

SILICON

12 V

12 ns

-55 Cel

18 ns

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

VT6X1T2R

ROHM

NPN

SEPARATE, 2 ELEMENTS

YES

400 MHz

.15 W

.2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

20 V

TIN COPPER

DUAL

R-PDSO-F6

1

Not Qualified

e2

10

260

2SD2656T106

ROHM

NPN

SINGLE

YES

400 MHz

.2 W

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

270

150 Cel

SILICON

30 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

e1

10

260

EMX51T2R

ROHM

NPN

SEPARATE, 2 ELEMENTS

YES

400 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

120

SILICON

20 V

DUAL

R-PDSO-F6

1

10

260

2SA1463IK

Renesas Electronics

PNP

SINGLE

YES

400 MHz

2 W

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

45 V

40 ns

100 ns

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

2SA1463IK-T1-AZ

Renesas Electronics

PNP

SINGLE

YES

400 MHz

2 W

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

45 V

40 ns

100 ns

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SC5706-TL-H

Onsemi

NPN

SINGLE

YES

400 MHz

5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

200

SILICON

50 V

TIN BISMUTH

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e6

30

260

2SCR522EBTL

ROHM

NPN

SINGLE

YES

400 MHz

.15 W

.2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

20 V

TIN

DUAL

R-PDSO-F3

1

Not Qualified

e3

10

260

2N2894

Texas Instruments

PNP

SINGLE

NO

400 MHz

1.2 W

.2 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

25

175 Cel

SILICON

12 V

60 ns

90 ns

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

2N4121

Onsemi

PNP

SINGLE

NO

400 MHz

.2 W

.2 A

1

Other Transistors

70

150 Cel

Tin/Lead (Sn/Pb)

e0

2SAR513P5T100

ROHM

PNP

SINGLE

YES

400 MHz

2 W

1 A

PLASTIC/EPOXY

SWITCHING

.4 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

180

150 Cel

12 pF

SILICON

50 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

e3

10

260

2SC4137

ROHM

NPN

SINGLE

NO

400 MHz

4 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

560

SILICON

20 V

SINGLE

R-PSFM-T3

Not Qualified

TO-126

NOT SPECIFIED

NOT SPECIFIED

2SCR522MT2L

ROHM

NPN

SINGLE

YES

400 MHz

.15 W

.2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

20 V

TIN

DUAL

R-PDSO-F3

1

Not Qualified

e3

10

260

QSX7TR

ROHM

NPN

SEPARATE, 2 ELEMENTS

YES

400 MHz

.5 W

1.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

270

150 Cel

SILICON

12 V

TIN SILVER COPPER

DUAL

R-PDSO-G6

1

Not Qualified

e1

10

260

BSV52LT1G

Onsemi

NPN

SINGLE

YES

400 MHz

.225 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

25

150 Cel

SILICON

12 V

12 ns

-55 Cel

18 ns

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

40

260

EMZ51T2R

ROHM

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

400 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

120

SILICON

20 V

DUAL

R-PDSO-F6

1

10

260

2N3576

Texas Instruments

PNP

SINGLE

NO

400 MHz

.36 W

.2 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

175 Cel

SILICON

15 V

30 ns

50 ns

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

2N3012

Texas Instruments

PNP

SINGLE

NO

400 MHz

.2 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

20

SILICON

12 V

60 ns

75 ns

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-18

2N4423

Texas Instruments

PNP

SINGLE

NO

400 MHz

.36 W

.2 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

20

140 Cel

SILICON

12 V

40 ns

50 ns

BOTTOM

O-PBCY-W3

Not Qualified

2N3011

Texas Instruments

NPN

SINGLE

NO

400 MHz

.36 W

.5 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

30

175 Cel

SILICON

30 V

BOTTOM

O-MBCY-W3

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

2N3564

Onsemi

NPN

SINGLE

NO

400 MHz

.2 W

.05 A

PLASTIC/EPOXY

.3 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

20

125 Cel

3.5 pF

SILICON

15 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

BSV52LT3

Onsemi

NPN

SINGLE

YES

400 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

150 Cel

SILICON

12 V

12 ns

18 ns

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e0

BFX60

Onsemi

NPN

SINGLE

NO

400 MHz

.23 W

.025 A

METAL

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

175 Cel

SILICON

25 V

BOTTOM

O-MBCY-W3

Not Qualified

TO-72

PN4275

Onsemi

NPN

SINGLE

NO

400 MHz

.6 W

.1 A

PLASTIC/EPOXY

SWITCHING

.2 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

18

150 Cel

SILICON

15 V

12 ns

12 ns

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-T3

Not Qualified

HIGH SPEED SATURATED SWITCHING

TO-92

e0

2SC947

Onsemi

NPN

SINGLE

NO

400 MHz

.15 W

.015 A

METAL

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

20

175 Cel

SILICON

20 V

BOTTOM

O-MBCY-W3

Not Qualified

TO-72

BSV52LT1

Onsemi

NPN

SINGLE

YES

400 MHz

.225 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

25

150 Cel

SILICON

12 V

12 ns

-55 Cel

18 ns

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

30

235

BF369

Onsemi

NPN

SINGLE

NO

400 MHz

.31 W

.05 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

70

135 Cel

SILICON

20 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BF198

Onsemi

NPN

SINGLE

NO

400 MHz

.25 W

.025 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

6

125 Cel

SILICON

30 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

BF155

Onsemi

NPN

SINGLE

NO

400 MHz

.175 W

.02 A

METAL

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

20

175 Cel

SILICON

40 V

BOTTOM

O-MBCY-W3

Not Qualified

TO-72

BF241

Onsemi

NPN

SINGLE

NO

400 MHz

.35 W

.025 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

35

150 Cel

SILICON

40 V

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-T3

Not Qualified

e0

2SC922

Onsemi

NPN

SINGLE

NO

400 MHz

.25 W

.02 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

125 Cel

SILICON

20 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

BFY79

Onsemi

NPN

SINGLE

NO

400 MHz

.3 W

METAL

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

30

175 Cel

SILICON

30 V

BOTTOM

O-MBCY-W3

Not Qualified

TO-72

2SA1575C

Onsemi

PNP

DARLINGTON

YES

400 MHz

1.3 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

1 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

.5 W

40

150 Cel

SILICON

200 V

SINGLE

R-PSSO-F3

COLLECTOR

2SC5706-H

Onsemi

NPN

SINGLE

NO

400 MHz

5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

200

SILICON

50 V

Tin/Bismuth (Sn/Bi)

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

e6

2SC5706-TL-E

Onsemi

NPN

SINGLE

YES

400 MHz

5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

200

SILICON

50 V

TIN BISMUTH

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e6

30

260

2SA1575F

Onsemi

PNP

DARLINGTON

YES

400 MHz

1.3 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

1 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

.5 W

160

150 Cel

SILICON

200 V

SINGLE

R-PSSO-F3

COLLECTOR

2SC4080E-TD-E

Onsemi

NPN

DARLINGTON

YES

400 MHz

1.3 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

1 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

.5 W

100

150 Cel

1.8 pF

SILICON

200 V

Tin/Bismuth (Sn/Bi)

SINGLE

R-PSSO-F3

1

COLLECTOR

e6

2SA1575D

Onsemi

PNP

DARLINGTON

YES

400 MHz

1.3 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

1 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

.5 W

60

150 Cel

SILICON

200 V

SINGLE

R-PSSO-F3

COLLECTOR

2SC4080D-TD-E

Onsemi

NPN

DARLINGTON

YES

400 MHz

1.3 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

1 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

.5 W

60

150 Cel

1.8 pF

SILICON

200 V

Tin/Bismuth (Sn/Bi)

SINGLE

R-PSSO-F3

1

COLLECTOR

e6

2SA1575E

Onsemi

PNP

DARLINGTON

YES

400 MHz

1.3 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

1 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

.5 W

100

150 Cel

SILICON

200 V

SINGLE

R-PSSO-F3

COLLECTOR

2SA1575E-TD-E

Onsemi

PNP

DARLINGTON

YES

400 MHz

1.3 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

1 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

.5 W

100

150 Cel

2.3 pF

SILICON

200 V

Tin/Bismuth (Sn/Bi)

SINGLE

R-PSSO-F3

1

COLLECTOR

e6

2N5181

Onsemi

NPN

SINGLE

NO

400 MHz

.18 W

.05 A

METAL

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

27

175 Cel

SILICON

45 V

BOTTOM

O-MBCY-W3

Not Qualified

TO-72

2SC5706

Onsemi

NPN

SINGLE

NO

400 MHz

5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

200

150 Cel

SILICON

50 V

SINGLE

R-PSIP-T3

COLLECTOR

2N5182

Onsemi

NPN

SINGLE

NO

400 MHz

.18 W

.004 A

METAL

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

27

175 Cel

SILICON

35 V

BOTTOM

O-MBCY-W3

Not Qualified

TO-72

SO2369

STMicroelectronics

NPN

SINGLE

YES

400 MHz

.2 W

.2 A

PLASTIC/EPOXY

SWITCHING

.25 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

.2 W

40

150 Cel

4 pF

SILICON

15 V

12 ns

18 ns

DUAL

R-PDSO-G3

Not Qualified

BSS26

STMicroelectronics

NPN

SINGLE

NO

400 MHz

.36 W

1 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

25

200 Cel

SILICON

40 V

35 ns

60 ns

TIN LEAD

BOTTOM

O-MBCY-W3

Not Qualified

TO-18

e0

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395