50 MHz Small Signal Bipolar Junction Transistors (BJT) 1,434

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
MMBTA42LT1G	Onsemi	NPN	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
SMBTA42E6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	50 MHz		.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			40	150 Cel		SILICON	300 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
SMMBTA56LT1G	Onsemi	PNP	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
MMBTA56LT1G	Onsemi	PNP	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
SMMBTA42LT1G	Onsemi	NPN	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
MMBTA92LT1G	Onsemi	PNP	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		25	150 Cel		SILICON	300 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
MMBTA42-7-F	Diodes Incorporated	NPN	SINGLE	YES	50 MHz		.5 A	PLASTIC/EPOXY	SWITCHING	.5 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	.3 W	40	150 Cel	3 pF	SILICON	300 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	MIL-STD-202
SMMBTA92LT1G	Onsemi	PNP	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		25	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AF	e3	30	260	AEC-Q101
FMMT458TA	Diodes Incorporated	NPN	SINGLE	YES	50 MHz	.5 W	.225 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	400 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBTA42	Texas Instruments	NPN	SINGLE	YES	50 MHz			PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			25			SILICON						DUAL	R-PDSO-G3					TO-236
SMMBTA42LT3G	Onsemi	NPN	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
MMBTA42LT3G	Onsemi	NPN	SINGLE	YES	50 MHz	.225 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
MPSA92	Texas Instruments	PNP	SINGLE	NO	50 MHz	.625 W	.5 A	PLASTIC/EPOXY			THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		25	150 Cel		SILICON	300 V					BOTTOM	O-PBCY-T3			Not Qualified		TO-226AA		NOT SPECIFIED	NOT SPECIFIED
MMBTA42,215	NXP Semiconductors	NPN	SINGLE	YES	50 MHz	.25 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
MMBTA42-TP	Micro Commercial Components	NPN	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	10	260
MMBTA92	Vishay Intertechnology	PNP	SINGLE	YES	50 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			25	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
PZTA42T1G	Onsemi	NPN	SINGLE	YES	50 MHz	1.5 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		TO-261AA	e3	30	260
SPZTA42T1G	Onsemi	NPN	SINGLE	YES	50 MHz	1.5 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR			TO-261AA	e3	30	260	AEC-Q101
SMBTA92E6327HTSA1	Infineon Technologies	PNP	SINGLE	YES	50 MHz		.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			25	150 Cel		SILICON	300 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
2N1893	Texas Instruments	NPN	SINGLE	NO	50 MHz	.8 W	.5 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		20	200 Cel		SILICON	80 V					BOTTOM	O-MBCY-W3		COLLECTOR	Not Qualified	HIGH RELIABILITY	TO-39		NOT SPECIFIED	NOT SPECIFIED
FMMT593TA	Diodes Incorporated	PNP	SINGLE	YES	50 MHz	.5 W	1 A	PLASTIC/EPOXY	SWITCHING	.3 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		50	150 Cel	10 pF	SILICON	100 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBTA56WT1G	Onsemi	PNP	SINGLE	YES	50 MHz	.15 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBTA06	Texas Instruments	NPN	SINGLE	YES	50 MHz			PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			50			SILICON						DUAL	R-PDSO-G3					TO-236
MMBTA92-7-F	Diodes Incorporated	PNP	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		25	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
UFMMT458TA	Diodes Incorporated	NPN	SINGLE	YES	50 MHz		.225 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			100			SILICON	400 V					DUAL	R-PDSO-G3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
FMMT459TA	Diodes Incorporated	NPN	SINGLE	YES	50 MHz	.806 W	.15 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		50	150 Cel		SILICON	450 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBTA92,215	NXP Semiconductors	PNP	SINGLE	YES	50 MHz	.25 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		25	150 Cel		SILICON	300 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
MMBTA92LT3G	Onsemi	PNP	SINGLE	YES	50 MHz	.225 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		25	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AF	e3	30	260
SMMBTA56LT3G	Onsemi	PNP	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
MMBTA56-7-F	Diodes Incorporated	PNP	SINGLE	YES	50 MHz	.35 W	.5 A	PLASTIC/EPOXY	SWITCHING	.25 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	MIL-STD-202
SMMBTA92LT3G	Onsemi	PNP	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		25	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AF	e3	30	260	AEC-Q101
MMBTA56LT3G	Onsemi	PNP	SINGLE	YES	50 MHz	.225 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
MMBTA92-TP	Micro Commercial Components	PNP	SINGLE	YES	50 MHz	.3 W	.3 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	10	260
SMMBTA56WT1G	Onsemi	PNP	SINGLE	YES	50 MHz	.15 W	.5 A						1			Other Transistors		100	150 Cel							MATTE TIN			1					e3	30	260
NSVPZTA92T1G	Onsemi	PNP	SINGLE	YES	50 MHz	1.5 W	.5 A	PLASTIC/EPOXY		.5 V	GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		40	150 Cel	6 pF	SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR			TO-261AA	e3	30	260	AEC-Q101
PZTA42	Onsemi	NPN	SINGLE	YES	50 MHz	1.5 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		TO-261AA	e3	30	260
KST42MTF	Onsemi	NPN	SINGLE	YES	50 MHz	350 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MPSA42BK	Diotec Semiconductor Ag	NPN	SINGLE	NO	50 MHz	.625 W	.5 A	PLASTIC/EPOXY	SWITCHING	.5 V	WIRE	ROUND	1	3	CYLINDRICAL		.625 W	40	150 Cel	3 pF	SILICON	300 V		-55 Cel		MATTE TIN	BOTTOM	O-PBCY-W3	1		Not Qualified		TO-92	e3	10	260
ZTX458	Diodes Incorporated	NPN	SINGLE	NO	50 MHz	1 W	.3 A	PLASTIC/EPOXY			WIRE	RECTANGULAR	1	3	IN-LINE	Other Transistors		100	200 Cel		SILICON	400 V				MATTE TIN	SINGLE	R-PSIP-W3			Not Qualified			e3	30	260
FCX458TA	Diodes Incorporated	NPN	SINGLE	YES	50 MHz		.225 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	1	3	SMALL OUTLINE			100			SILICON	400 V				MATTE TIN	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified			e3	30	260
BCX52,115	NXP Semiconductors	PNP	SINGLE	YES	50 MHz	1.3 W	1 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		25	150 Cel		SILICON	60 V				TIN	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified			e3	30	260
MPSA42PBFREE	Central Semiconductor	NPN	SINGLE	NO	50 MHz	1.5 W	.5 A	PLASTIC/EPOXY		.5 V	THROUGH-HOLE	ROUND	1	3	CYLINDRICAL		.625 W	40	150 Cel	3 pF	SILICON	300 V		-65 Cel		MATTE TIN OVER NICKEL	BOTTOM	O-PBCY-T3					TO-92	e3
MPSA92G	Onsemi	PNP	SINGLE	NO	50 MHz	.625 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		25	150 Cel		SILICON	300 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
MPSA42G	Onsemi	NPN	SINGLE	NO	50 MHz	.625 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		40	150 Cel		SILICON	300 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
MPSA92PBFREE	Central Semiconductor	PNP	SINGLE	NO	50 MHz	.625 W	.5 A						1			Other Transistors		25	150 Cel							MATTE TIN OVER NICKEL								e3
MPSA42RLRAG	Onsemi	NPN	SINGLE	NO	50 MHz	1.5 W	.5 A	PLASTIC/EPOXY			THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		40	150 Cel		SILICON	300 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
FMMT558TA	Diodes Incorporated	PNP	SINGLE	YES	50 MHz	.5 W	.15 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	400 V	95 ns	-55 Cel	1600 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
UFMMT593TA	Diodes Incorporated	PNP	SINGLE	YES	50 MHz		1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			50			SILICON	100 V					DUAL	R-PDSO-G3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395