Motorola Small Signal Bipolar Junction Transistors (BJT) 13

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BCY59-IX

Motorola

NPN

SINGLE

NO

200 MHz

.2 A

METAL

SWITCHING

.7 V

WIRE

ROUND

1

3

CYLINDRICAL

1 W

250

200 Cel

6 pF

SILICON

45 V

150 ns

800 ns

BOTTOM

O-MBCY-W3

Not Qualified

TO-206AA

NOT SPECIFIED

NOT SPECIFIED

BCY59-VIII

Motorola

NPN

SINGLE

NO

200 MHz

.2 A

METAL

SWITCHING

.7 V

WIRE

ROUND

1

3

CYLINDRICAL

1 W

180

200 Cel

6 pF

SILICON

45 V

150 ns

800 ns

BOTTOM

O-MBCY-W3

Not Qualified

TO-206AA

NOT SPECIFIED

NOT SPECIFIED

BC817-40L

Motorola

NPN

SINGLE

YES

200 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

.225 W

250

150 Cel

SILICON

45 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e0

BCY59-X

Motorola

NPN

SINGLE

NO

200 MHz

.2 A

METAL

.7 V

WIRE

ROUND

1

3

CYLINDRICAL

1 W

380

200 Cel

6 pF

SILICON

45 V

150 ns

800 ns

BOTTOM

O-MBCY-W3

Not Qualified

TO-206AA

NOT SPECIFIED

NOT SPECIFIED

MMBT4401L

Motorola

NPN

SINGLE

YES

250 MHz

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

40 V

35 ns

255 ns

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e0

MD8002

Motorola

NPN

SEPARATE, 2 ELEMENTS

NO

260 MHz

.03 A

METAL

AMPLIFIER

WIRE

ROUND

2

6

CYLINDRICAL

100

SILICON

50 V

TIN LEAD

BOTTOM

O-MBCY-W6

Not Qualified

e0

MM3005

Motorola

NPN

SINGLE

NO

50 MHz

2.5 A

METAL

AMPLIFIER

.35 V

WIRE

ROUND

1

3

CYLINDRICAL

8 W

40

200 Cel

15 pF

SILICON

60 V

TIN LEAD

BOTTOM

O-MBCY-W3

Not Qualified

TO-39

e0

MM4001

Motorola

PNP

SINGLE

NO

5 W

.5 A

METAL

.6 V

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

5 W

20

200 Cel

10 pF

SILICON

150 V

TIN LEAD

BOTTOM

O-MBCY-W3

Not Qualified

TO-39

e0

MC1412P

Motorola

NPN

7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

.5 A

PLASTIC/EPOXY

SWITCHING

1.6 V

THROUGH-HOLE

RECTANGULAR

7

16

IN-LINE

150 Cel

SILICON

TIN LEAD

DUAL

R-PDIP-T16

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

MM3904

Motorola

NPN

SINGLE

NO

300 MHz

.2 W

.2 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

15

175 Cel

SILICON

40 V

70 ns

250 ns

TIN LEAD

BOTTOM

O-MBCY-W3

Not Qualified

HIGH RELIABILITY

TO-52

e0

MM4003

Motorola

PNP

SINGLE

NO

5 W

.5 A

METAL

5 V

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

5 W

20

200 Cel

20 pF

SILICON

250 V

TIN LEAD

BOTTOM

O-MBCY-W3

Not Qualified

TO-39

e0

MMBTA06L

Motorola

NPN

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.25 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

.225 W

100

150 Cel

SILICON

80 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e0

MTS102

Motorola

NPN

SINGLE

NO

.1 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395