STMicroelectronics Small Signal Bipolar Junction Transistors (BJT) 490

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2N5154HRT

STMicroelectronics

BCW68H

STMicroelectronics

PNP

SINGLE

YES

100 MHz

.35 W

.8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

45 V

Matte Tin (Sn)

DUAL

R-PDSO-G3

e3

2N2907ASW35

STMicroelectronics

2N2907A1

STMicroelectronics

PNP

SINGLE

NO

.6 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

50

SILICON

60 V

45 ns

300 ns

BOTTOM

O-MBCY-W3

TO-18

BCW68RG

STMicroelectronics

NPN

SINGLE

YES

100 MHz

.36 W

.8 A

1

Other Transistors

150 Cel

TIN LEAD

e0

JANS2N5551UBG

STMicroelectronics

NPN

SINGLE

YES

1 W

.5 A

UNSPECIFIED

AMPLIFIER

.2 V

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.36 W

30

200 Cel

6 pF

SILICON

160 V

DUAL

R-XDSO-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MIL-19500

STX13004

STMicroelectronics

NPN

SINGLE

NO

2.5 W

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

6

150 Cel

SILICON

400 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

e3

2N5153RHR

STMicroelectronics

STX13004G-AP

STMicroelectronics

NPN

SINGLE

NO

2.5 W

2 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

6

150 Cel

SILICON

400 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

e3

JANS2N2907AUBG

STMicroelectronics

PNP

SINGLE

YES

.5 A

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

60 V

45 ns

300 ns

Gold (Au)

DUAL

R-XDSO-N3

Not Qualified

e4

MIL-19500

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395